HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200807
Issued Date : 2008.11.12
Revised Date :2009,12,15
Page No. : 1/5
H2305N
P-Channel Enhancement-Mode MOSFET (-20V, -4.5A)
H2305N Pin Assignment & Symbol
3
2
3-Lead Plastic
SOT-23
Package Code: N
Pin 1: Gate 2: Source 3: Drain
Source
Gate
1
Features
•
R
DS(on)
<58mΩ@V
GS
=-4.5V, I
D
=-4.2A
•
R
DS(on)
<71mΩ@V
GS
=-2.5V, I
D
=-2A
•
Simple Drive Requirement
•
Small Package Outline
•
ISurface Mount Device
Drain
Description
The Advanced Power MOSFETS from APEC provide the designer with the best combination of fast switching
low on-resistance and cost-effectiveness.
The SOT-23 package is universally preferred for all commercial-industrial surface mount applications and suited for
low voltage, applications such as DC/DC converters.
Absolute Maximum Ratings
(T
A
=25
o
C, unless otherwise noted)
Symbol
V
DS
V
GS
ID@TA=25℃
ID@TA=70℃
I
DM
P
D
T
stg
T
j
,
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current)
Continuous Drain Current
Drain Current (Pulsed)
*1
Total Power Dissipation @T
A
=25
o
C
Storage Temperature Range
Operating Junction Temperature Range
Parameter
Ratings
-20
±8
-4.5
-3.5
-10
1.38
-55 to +150
-55 to +150
Units
V
V
A
A
A
W
°C
°C
*1: Repetitive Rating: Pulse width limited by the maximum junction temperation.
*2: 1-in
2
2oz Cu PCB board
H2305N
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Electrical Characteristics
(T
A
=25°C, unless otherwise noted)
Symbol
•
Static
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=-250uA
Reference to 25℃,
ID=-1mA
V
GS
=-4.5V, I
D
=-2.8A
R
DS(on)
Drain-Source On-State Resistance
V
GS
=-2.5V, I
D
=-2A
V
GS
=-1.8V, I
D
=-1A
V
GS(th)
I
DSS
I
GSS
g
FS
Gate Threshold Voltage
Zero Gate Voltage Drain Current (Tj=25oC)
Zero Gate Voltage Drain Current (Tj=55oC)
Gate-Body Leakage Current
Forward Transconductance
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-20V, V
GS
=0V
V
DS
=-16V, V
GS
=0V
V
GS
=±8V, V
DS
=0V
V
DS
=-5V, I
D
=-2.8A
-
-0. 45
-
-
-
-
-
-20
Characteristic
Test Conditions
Min.
Spec. No. : MOS200807
Issued Date : 2008.11.12
Revised Date :2009,12,15
Page No. : 2/5
Typ.
Max.
Unit
-
-0.1
-
V
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient
V/℃
58
71
108
V
-1
-10
uA
uA
nA
S
mΩ
-
9.0
±100
-
•
Drain-Source Diode Characteristics
V
SD
Drain-Source Diode Forward Voltage
V
GS
=0V, I
S
=-1.2A
-
-
-1.2
V
Note: Pulse Test: Pulse Width
≤300us,
Duty Cycle≤2%
H2305N
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
30
Ta=25
℃
25
ID,Drain current(
20
15
10
5
0
0
2
4
6
VDS,Drain-to-source Voltage(V)
Fig 1.Typical Output
8
-5V
-4V
-3V
-2 V
30
25
ID,Drain current(
20
15
10
5
0
0
Ta=150
℃
Spec. No. : MOS200807
Issued Date : 2008.11.12
Revised Date :2009,12,15
Page No. : 3/5
-5V
-4V
-3V
-2V
-1.5V
-1.5V
2
4
6
VDS,Drain-to-source Voltage(V)
Fig 2.Typical Output
Ch
i i
8
70
65
80
70
Normalized RDS( O
60
50
40
30
20
10
0
-50
-25
0
25
50
75 100 125
Tj,Junction Temperature(
℃
)
Fig 4.Normalized On-Resistance v.s.Junction
150
ID=-4.2A
VGS=-4.5V
RDS(ON)(m
Ω
60
55
50
45
40
1
ID=4.2A
Ta=25
℃
2
3
4
5
VGS,Gate-to-Source Voltage(V)
Fig 3.On-Resistance v.s.Gate
6
10
Tj=150
℃
Tj=25
℃
VGS(th)( V
0.6
0.5
0.4
0.3
0.2
0.1
1
IS(A)
0.1
0.01
0
0.2
0.4
0.6
0.8
1
1.2
VSD,Source-to-Drain Voltage(V)
Fig 5.Forward Characteristic of Reverse
1.4
0
-50
-25
0
25
50
75
100 125 150 175
Tj,Junction Temperature(
℃
)
Fig 6.Gate Threshold Voltage
HSMC Product Specification
H2305N
HI-SINCERITY
MICROELECTRONICS CORP.
SOT-23 Dimension
Marking:
Spec. No. : MOS200807
Issued Date : 2008.11.12
Revised Date :2009,12,15
Page No. : 4/5
A
L
2 3 0 5
3
B S
1
2
Pb-Free: " "
(Note)
Normal: None
Pb Free Mark
V
G
Note: Pb-free product can distinguish by the
green label or the extra description on the
right side of the label.
DIM
A
B
C
D
G
H
J
K
L
S
V
Min.
2.80
1.20
0.89
0.30
1.70
0.013
0.085
0.32
0.85
2.10
0.25
Max.
3.04
1.60
1.30
0.50
2.30
0.10
0.177
0.67
1.15
2.75
0.65
*: Typical, Unit: mm
C
D
H
3-Lead SOT-23 Plastic
Surface Mounted Package
HSMC Package Code: N
K
J
Pin Style: 1.Gate 2.Source 3.Drain
Material:
•
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
•
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
•
HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
•
Head Office
(Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
H2305N
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10
o
C~35
o
C Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Figure 1: Temperature profile
t
P
T
P
Ramp-up
T
L
Ts
max
Temperature
t
L
Spec. No. : MOS200807
Issued Date : 2008.11.12
Revised Date :2009,12,15
Page No. : 5/5
Critical Zone
T
L
to T
P
Ts
min
t
S
Preheat
Ramp-down
25
t 25
o
C to Peak
Time
Profile Feature
Average ramp-up rate (T
L
to T
P
)
Preheat
- Temperature Min (Ts
min
)
- Temperature Max (Ts
max
)
- Time (min to max) (ts)
Tsmax to T
L
- Ramp-up Rate
Time maintained above:
- Temperature (T
L
)
- Time (t
L
)
Peak Temperature (T
P
)
Time within 5
o
C of actual Peak
Temperature (t
P
)
Ramp-down Rate
Time 25
o
C to Peak Temperature
3. Flow (wave) soldering (solder dipping)
Products
Pb devices.
Pb-Free devices.
Sn-Pb Eutectic Assembly
<3
o
C/sec
100
o
C
150
o
C
60~120 sec
<3
o
C/sec
183
o
C
60~150 sec
240
o
C +0/-5
o
C
10~30 sec
<6
o
C/sec
<6 minutes
Pb-Free Assembly
<3
o
C/sec
150
o
C
200
o
C
60~180 sec
<3
o
C/sec
217
o
C
60~150 sec
260
o
C +0/-5
o
C
20~40 sec
<6
o
C/sec
<8 minutes
Peak temperature
245
o
C
±5
o
C
260
o
C
±5
o
C
Dipping time
10sec
±1sec
10sec
±1sec
H2305N
HSMC Product Specification
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