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H2584

-15V -10A PNP外延平面晶体管

器件类别:分立半导体   

厂商名称:台湾华昕(HSMC)

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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6716
Issued Date : 1996.02.01
Revised Date : 2004.11.03
Page No. : 1/4
H2584
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The H2584 is designed for use in low voltage and low dropout regulator
applications.
TO-220
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature ........................................................................................................................... -55 ~ +150
°C
Junction Temperature ..................................................................................................................... 150
°C
Maximum
Maximum Power Dissipation
Total Power Dissipation (T
C
=25°C) .................................................................................................................... 65 W
Maximum Voltages and Currents (T
A
=25°C)
V
CBO
Collector to Base Voltage .......................................................................................................................... -20 V
V
CEO
Collector to Emitter Voltage....................................................................................................................... -15 V
V
EBO
Emitter to Base Voltage ............................................................................................................................... -5 V
I
C
Collector Current ........................................................................................................................................... -10 A
Electrical Characteristics
(T
A
=25°C)
Symbol
I
CBO
I
CEO
I
EBO
*V
CE(sat)
V
BE(on)
*h
FE1
*h
FE2
Min.
-
-
-
-
-
2
1
Typ.
-
-
-
-
-
-
15
Max.
-10
-20
-2
-1.5
-2
60
60
Unit
uA
uA
mA
V
V
K
K
V
CB
=-20V
V
CE
=-15V
V
EB
=-5V
I
C
=-10A, I
B
=-10mA
I
C
=-5A, V
CE
=-1.7V
I
C
=-500mA, V
CE
=-1.7V
I
C
=-10A, V
CE
=-1.7V
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Test Conditions
H2584
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
100000
10000
Spec. No. : HE6716
Issued Date : 1996.02.01
Revised Date : 2004.11.03
Page No. : 2/4
Saturation Voltage & Collector Current
10000
Saturation Voltage (mV)
75 C
125 C
1000
25 C
o
o
o
1000
hFE
125 C
75 C
o
o
100
25 C
10
hFE @ V
CE
=1.7V
1
1
10
100
1000
10000
o
V
CE(sat)
@ I
C
=1000I
B
100
1000
10000
Collector Current-I
C
(mA)
Collector Current-I
C
(mA)
Saturation Voltage & Collector Current
10000
V
BE(ON)
@ V
CE
=1.7V
10.00
Switching Time & Collector Current
V
CC
=25V, I
C
=250I
B1
=-250I
B2
Switching Times (us)
..
.
Tstg
1.00
Tf
Ton
0.10
ON Voltage (mV)
25 C
1000
o
o
75 C
125 C
o
100
1
10
100
1000
10000
0.01
1
10
Collector Current-I
C
(mA)
Collector Current (A)
Capacitance & Reverse-Biased Voltage
1000
100000
Safe Operating Area
10000
Collector Current-I
C
(mA)
P
T
=1ms
P
T
=100ms
P
T
=1s
Capacitance (pF)
1000
100
Cob
100
10
10
0.1
1
10
100
1
1
10
100
Reverse-Biased Voltage (V)
Forward Voltage (V)
H2584
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-220AB Dimension
Marking:
A
D
B
E
C
F
Pb Free Mark
Pb-Free: "
.
"
(Note)
Normal: None
H
Spec. No. : HE6716
Issued Date : 1996.02.01
Revised Date : 2004.11.03
Page No. : 3/4
2584
Date Code
Control Code
H
I
G
Tab
P
L
J
M
3
2
1
O
N
K
Note: Green label is used for pb-free packing
Pin Style: 1.Base 2.Collector 3.Emitter
Material:
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Min.
5.58
8.38
4.40
1.15
0.35
2.03
9.66
-
-
3.00
0.75
2.54
1.14
-
12.70
14.48
Max.
7.49
8.90
4.70
1.39
0.60
2.92
10.28
*16.25
*3.83
4.00
0.95
3.42
1.40
*2.54
14.27
15.87
*: Typical, Unit: mm
3-Lead TO-220AB
Plastic Package
HSMC Package Code: E
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its products without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Head Office
(Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056
Fax: 886-2-25632712, 25368454
Factory 1:
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
H2584
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10
o
C~35
o
C Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Figure 1: Temperature profile
t
P
T
P
Ramp-up
T
L
Ts
max
Temperature
t
L
Spec. No. : HE6716
Issued Date : 1996.02.01
Revised Date : 2004.11.03
Page No. : 4/4
Critical Zone
T
L
to T
P
Ts
min
t
S
Preheat
Ramp-down
25
t 25
o
C to Peak
Time
Profile Feature
Average ramp-up rate (T
L
to T
P
)
Preheat
- Temperature Min (Ts
min
)
- Temperature Max (Ts
max
)
- Time (min to max) (ts)
Tsmax to T
L
- Ramp-up Rate
Time maintained above:
- Temperature (T
L
)
- Time (t
L
)
Peak Temperature (T
P
)
Time within 5
o
C of actual Peak
Temperature (t
P
)
Ramp-down Rate
Time 25
o
C to Peak Temperature
3. Flow (wave) soldering (solder dipping)
Products
Pb devices.
Pb-Free devices.
Sn-Pb Eutectic Assembly
<3
o
C/sec
100
o
C
150
o
C
60~120 sec
<3
o
C/sec
183
o
C
60~150 sec
240
o
C +0/-5
o
C
10~30 sec
<6
o
C/sec
<6 minutes
Pb-Free Assembly
<3
o
C/sec
150
o
C
200
o
C
60~180 sec
<3
o
C/sec
217
o
C
60~150 sec
260
o
C +0/-5
o
C
20~40 sec
<6
o
C/sec
<8 minutes
Peak temperature
245
o
C
±5
o
C
260
o
C +0/-5
o
C
Dipping time
5sec
±1sec
5sec
±1sec
H2584
HSMC Product Specification
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