Collector to Base Voltage ......................................................................................................................... 180 V
V
CEO
Collector to Emitter Voltage ...................................................................................................................... 160 V
V
EBO
Emitter to Base Voltage ................................................................................................................................ 6 V
I
C
Collector Current ....................................................................................................................................... 600 mA
Electrical Characteristics
(T
A
=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)1
*V
CE(sat)2
*V
BE(sat)1
*V
BE(sat)2
*h
FE1
*h
FE2
*h
FE3
f
T
Cob
Min.
180
160
6
-
-
-
-
-
-
80
80
50
100
-
Typ.
-
-
-
-
-
-
-
-
-
-
160
-
-
-
Max.
-
-
-
50
50
0.15
0.2
1
1
-
400
-
300
6
MHz
pF
Unit
V
V
V
nA
nA
V
V
V
V
I
C
=1mA, I
B
=0
I
E
=10uA, I
C
=0
V
CB
=120V, I
E
=0
V
EB
=4V, I
C
=0
I
C
=10mA, I
B
=1.0mA
I
C
=50mA, I
B
=5mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
V
CE
=5V, I
C
=1mA
V
CE
=5V, I
C
=10mA
V
CE
=5V, I
C
=50mA
V
CE
=10V, I
C
=10mA, f=100MHz
V
CB
=10V, f=1MHz, I
E
=0
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Test Conditions
I
C
=100uA, I
E
=0
Classification of h
FE2
Rank
Range
H2N5551
A
80-200
N
100-250
C
160-400
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
1000
125 C
25 C
100
75 C
o
o
o
Spec. No. : HE6219
Issued Date : 1992.09.21
Revised Date : 2004.12.28
Page No. : 2/5
Saturation Voltage & Collector Current
100000
V
CE(sat)
@ I
C
=10I
B
Saturation Voltage (mV)
10000
hFE
1000
75 C
100
125 C
o
o
10
hFE @ V
CE
=5V
25 C
o
1
1
10
100
1000
10
0.1
1
10
100
1000
Collector Current-I
C
(mA)
Collector Current-I
C
(mA)
Saturation Voltage & Collector Current
1000
Capacitance & Reverse-Biased Voltage
100
25 C
o
Saturation Voltage (mV)
75 C
125 C
o
o
Capacitance (pF)
V
BE(sat)
@ I
C
=10I
B
10
Cob
100
0.1
1
10
100
1000
1
0.1
1
10
100
1000
Collector Current-I
C
(mA)
Reverse Biased Voltage (V)
Cutoff Frequency & Collector Current
1000
10000
Safe Operating Area
Cutoff Frequency (MHz)
..
.
1000
100
V
CE
=10V
Collector Current-I
C
(mA)
100
PT=1ms
PT=100ms
10
PT=1s
10
1
10
100
1
1
10
100
1000
Collector Current (mA)
Forward Biased Voltage-V
CE
(V)
H2N5551
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6219
Issued Date : 1992.09.21
Revised Date : 2004.12.28
Page No. : 3/5
PD-Ta
700
600
Power Dissipation-PD (mW)
500
400
300
200
100
0
0
50
100
o
150
200
Ambient Temperature-Ta ( C)
H2N5551
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-92 Dimension
A
B
1
2
3
Spec. No. : HE6219
Issued Date : 1992.09.21
Revised Date : 2004.12.28
Page No. : 4/5
α
2
Marking:
Pb Free Mark
Pb-Free: "
.
"
(Note)
Normal: None
H
2 N
5 5 5 1
Control Code
α
3
Date Code
Note: Green label is used for pb-free packing
C
D
Pin Style: 1.Emitter 2.Base 3.Collector
Material:
•
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
•
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM
A
B
C
D
E
F
G
H
I
α1
α2
α3
Min.
4.33
4.33
12.70
0.36
-
3.36
0.36
-
-
-
-
-
Max.
4.83
4.83
-
0.56
*1.27
3.76
0.56
*2.54
*1.27
*5°
*2°
*2°
H
I
E
F
G
*: Typical, Unit: mm
α
1
3-Lead TO-92 Plastic Package
HSMC Package Code: A
TO-92 Taping Dimension
DIM
A
D
D1
D2
F1,F2
H
H1
H2
H2A
H3
H4
L
L1
P
P1
P2
T
T1
T2
W
W1
Min.
4.33
3.80
0.36
4.33
2.40
15.50
8.50
-
-
-
-
-
2.50
12.50
5.95
50.30
-
-
0.36
17.50
5.00
Max.
4.83
4.20
0.53
4.83
2.90
16.50
9.50
1
1
27
21
11
-
12.90
6.75
51.30
0.55
1.42
0.68
19.00
7.00
Unit: mm
H2
H2
H2A H2A
D2
A
H3
H4 H
L
L1
H1
F1F2
T2
T
T1
P1
P
P2
D1
D
W1
W
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
•
HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
•
Head Office
(Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
•
Factory 1:
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
电子工程世界
