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H2N6718V

100V 1A NPN外延平面晶体管

器件类别:分立半导体   

厂商名称:台湾华昕(HSMC)

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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6616
Issued Date : 1993.09.24
Revised Date : 2005.08.16
Page No. : 1/5
H2N6718V
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The H2N6718V is designed for general purpose medium power amplifier and
switching.
Absolute Maximum Ratings
TO-126ML
Maximum Temperatures
Storage Temperature ........................................................................................................................... -55 ~ +150
°C
Junction Temperature ................................................................................................................... +150
°C
Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)................................................................................................................... 1.6 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage.................................................................................................................... 100 V
BVCEO Collector to Emitter Voltage................................................................................................................. 100 V
BVEBO Emitter to Base Voltage........................................................................................................................... 5 V
IC Collector Current ............................................................................................................................................... 1 A
Electrical Characteristics
(Ta=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
*V
CE(sat)
*h
FE1
*h
FE2
*h
FE3
f
T
Cob
Min.
100
100
5
-
-
80
50
20
50
-
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
350
-
250
-
-
20
MHz
pF
Unit
V
V
V
nA
mV
I
C
=1mA, I
B
=0
I
E
=10uA, I
C
=0
V
CB
=80V, I
E
=0
I
C
=350mA, I
B
=35mA
I
C
=50mA, V
CE
=1V
I
C
=250mA, V
CE
=1V
I
C
=500mA, V
CE
=1V
V
CE
=10V, I
C
=50mA, f=100MHz
V
CB
=10V, f=1MHz, I
E
=0
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Test Conditions
I
C
=100uA, I
E
=0
H2N6718V
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
1000
Spec. No. : HE6616
Issued Date : 1993.09.24
Revised Date : 2005.08.16
Page No. : 2/5
Saturation Voltage & Collector Current
1000
100
Saturation Voltage (mV)
V
CE
=1V
hFE
100
V
CE(sat)
@ I
C
=10I
B
10
0.1
1
10
100
1000
10
0.1
1
10
100
1000
Collector Current (mA)
Collector Current (mA)
Capacitance & Reverse-Biased Voltage
100
1000
Cutoff Frequency & Collector Current
Cutoff Frequency (MHz)
Capacitance (pF)
V
CE
=10V
10
100
Cob
1
0.1
1
10
100
1000
10
1
10
100
1000
Reverse Biased Voltage (V)
Collector Current (mA)
Safe Operating Area
10000
1800
1600
1400
1200
1000
800
600
400
200
Power Derating
Collector Current-I
C
(mA)
1000
100
P
T
=1 ms
P
T
=100 ms
10
P
T
=1 s
Power Dissipation-PD(mW)
1
1
10
100
1000
0
0
20
40
60
80
100
o
120
140
160
Forward Voltage-V
CE
(V)
Ambient Temperature-Ta( C)
H2N6718V
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6616
Issued Date : 1993.09.24
Revised Date : 2005.08.16
Page No. : 3/5
IR Reflow Profile
260
240
220
200
250
10+/-2 sec
300
Temperature Profile for Dip Soldering
10+/-2 sec
Temperature( C)
Temperature( C)
180
160
140
120
100
80
60
40
20
0
0
50
100
150
200
250
300
150+/-30
40+/-20 sec
200
o
o
150
100
120+/-20 sec
50
0
0
50
100
150
200
250
300
350
Time(sec)
Time(sec)
H2N6718V
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-126ML Dimension
A
C
D
E
H
2N
67 18V
Spec. No. : HE6616
Issued Date : 1993.09.24
Revised Date : 2005.08.16
Page No. : 4/5
Marking:
L
Pb Free Mark
Pb-Free: "
.
"
(Note)
Normal: None
I
B
1
F
H
G
M
2
3
Date Code
Control Code
Note: Green label is used for pb-free packing
Pin Style: 1.Emitter 2.Collector 3.Base
Material:
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
Min.
7.74
10.87
0.88
1.28
3.50
2.61
13
1.18
2.88
0.68
-
3.44
1.88
0.50
Max.
8.24
11.37
1.12
1.52
3.75
3.37
-
1.42
3.12
0.84
2.30
3.70
2.14
0.51
*: Typical, Unit: mm
K
J
N
3-Lead TO-126ML
Plastic Package
HSMC Package Code: D
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its products without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Head Office
(Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
Factory 1:
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
H2N6718V
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10
o
C~35
o
C Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Figure 1: Temperature profile
t
P
T
P
Ramp-up
T
L
Ts
max
Temperature
t
L
Spec. No. : HE6616
Issued Date : 1993.09.24
Revised Date : 2005.08.16
Page No. : 5/5
Critical Zone
T
L
to T
P
Ts
min
t
S
Preheat
Ramp-down
25
t 25
o
C to Peak
Time
Profile Feature
Average ramp-up rate (T
L
to T
P
)
Preheat
- Temperature Min (Ts
min
)
- Temperature Max (Ts
max
)
- Time (min to max) (ts)
Tsmax to T
L
- Ramp-up Rate
Time maintained above:
- Temperature (T
L
)
- Time (t
L
)
Peak Temperature (T
P
)
Time within 5
o
C of actual Peak
Temperature (t
P
)
Ramp-down Rate
Time 25
o
C to Peak Temperature
3. Flow (wave) soldering (solder dipping)
Products
Pb devices.
Pb-Free devices.
Sn-Pb Eutectic Assembly
<3
o
C/sec
100
o
C
150
o
C
60~120 sec
<3
o
C/sec
183
o
C
60~150 sec
240
o
C +0/-5
o
C
10~30 sec
<6
o
C/sec
<6 minutes
Pb-Free Assembly
<3
o
C/sec
150
o
C
200
o
C
60~180 sec
<3
o
C/sec
217
o
C
60~150 sec
260
o
C +0/-5
o
C
20~40 sec
<6
o
C/sec
<8 minutes
Peak temperature
245
o
C
±5
o
C
260
o
C +0/-5
o
C
Dipping time
5sec
±1sec
5sec
±1sec
H2N6718V
HSMC Product Specification
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