HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200514
Issued Date : 2005.01.01
Revised Date : 2005.10.14
Page No. : 1/5
H50N03J
N-Channel Enhancement-Mode MOSFET (25V, 50A)
H50N03J Pin Assignment
Tab
1
2
3
3-Lead Plastic
TO-252
Package Code: J
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
Features
•
R
DS(on)
=6mΩ@V
GS
=10V, I
D
=30A
•
R
DS(on)
=9mΩ@V
GS
=4.5V, I
D
=30A
•
Advanced trench process technology
•
High Density Cell Design for Ultra Low On-Resistance
•
Specially Designed for DC/DC Converters and Motor Drivers
•
Fully Characterized Avalanche Voltage and Current
•
Improved Shoot-Through FOM
D
Internal Schematic
Diagram
G
S
Maximum Ratings & Thermal Characteristics
(T
A
=25
o
C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
*1
Maximum Power Dissipation
T
A
=25
o
C
T
A
=75
o
C
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
stg
E
AS
R
θJC
R
θJA
Value
25
±20
50
350
70
42
-55 to 150
300
1.8
40
O
O
Units
V
V
A
A
W
W
o
Operating Junction and Storage Temperature Range
Avalanche Energy with Single Pulse
I
D
=50A, V
DD
=25V, L=0.1mH
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance(PCB mounted)
*2
*1: Maximum DC current limited by the package.
*2: 1-in
2
2oz Cu PCB board
C
mJ
C/W
C/W
Switching
Test Circuit
V
DD
Switching
Waveforms
ton
td(on)
toff
tr td(off)
90%
tf
90 %
V
IN
V
GEN
R
G
G
D
V
OUT
Output, V
OUT
10%
10%
Inverted
90%
50%
50%
S
Input, V
IN
10%
Pulse Width
H50N03J
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
ELectrical Characteristics
Characteristic
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Gate Resistance
Forward Transconductance
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Max. Diode Forward Current
Diode Forward Voltage
NOTE: Pulse Test: Pulse Width
≤300us,
Duty Cycle≤2%
Spec. No. : MOS200514
Issued Date : 2005.01.01
Revised Date : 2005.10.14
Page No. : 2/5
Symbol
Test Condition
Min.
Typ.
Max.
Unit
BV
DSS
R
DS(on)
R
DS(on)
V
GS(th)
I
DSS
I
GSS
R
g
g
fs
V
GS
=0V, I
D
=250uA
V
GS
=4.5V, I
D
=30A
V
GS
=10V, I
D
=30A
V
DS
=V
GS
, I
D
=250uA
V
DS
=25V, V
GS
=0V
V
GS
=±20V, V
DS
=0V
V
DS
=0V, V
GS
=1V at 1MHz
V
DS
=15V, I
D
=15A
25
-
-
1.3
-
-
-
-
-
7.5
4.5
1.9
-
-
3
50
-
9
6
3
1
±100
-
-
V
mΩ
V
uA
nA
Ω
S
Q
g
Q
gs
Q
gd
td(on)
tr
td(off)
tf
C
iss
C
oss
C
rss
V
DS
=15V, V
GS
=0V, f=1MHz
V
DD
=15V, R
L
=15Ω, I
D
=1A
V
GEN
=10V, R
G
=6Ω
V
DS
=15V, I
D
=20A, V
GS
=5V
-
-
-
-
-
-
-
-
-
-
16.8
6.08
4.93
15.3
4
45.27
7.6
2325.9
330.55
173.91
-
-
-
-
-
nS
-
-
-
-
-
pF
nC
I
S
V
SD
I
S
=20A, V
GS
=0V
-
-
-
0.85
50
1.3
A
V
H50N03J
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Fig.1 Output Characteristric
80
I
D
- Drain-to-Source Current (A)
I
D
- Drain Source Current (A)
80
Spec. No. : MOS200514
Issued Date : 2005.01.01
Revised Date : 2005.10.14
Page No. : 3/5
Fig.2 Transfer Characteristric
V
DS
=10V
60
V
GS
= 4.0V, 4.5V, 5.0V, 6.0V, 10.0V
60
3.5V
40
40
T
J
= 125
o
C
20
25
o
C
0
- 55
o
C
20
3.0V
2.5V
0
0
1
2
3
4
5
V
DS
- Drain-to-Source Voltage (V)
1
1.5
2
2.5
3
3.5
4
4.5
V
GS
- Gate-to-Source Voltage (V)
Fig.3 On Resistance vs
Drain Current
R
DS(ON)
- On-Resistance (m
)
Fig.4 On Resistance vs Gate
to Source Voltage
30
20
R
DS(ON)
- On-Resistance (m
Ξ
)
I
D
=30A
25
20
15
10
5
0
125
o
C
15
10
V
GS
= 4.5V
V
GS
= 10V
5
T
J
=25
o
C
0
0
20
40
60
80
100
I
D
- Drain Current (A)
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
Fig.5 On Resistance vs
Junction Temperature
1.5
Fig.6 Capacitance
6000
R
DS(on)
- On - Resistance (Mormalized
R
DS(ON)
- On-Resistance
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
VGS =10 V
ID =30A
5000
C - Capacitance (pF)
(Normalized)
Ciss
f=1MHz
VGS=0V
4000
3000
2000
1000
0
Coss, Crss
-50
-25
0
25
50
75
100
125
150
0
5
10
15
20
25
T
J
- Junction Tem perature (
o
C)
VDS - Drain-to-Source Voltage (V)
H50N03J
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-252 Dimension
M
A
F
C
G
1
2
3
Date Code
Spec. No. : MOS200514
Issued Date : 2005.01.01
Revised Date : 2005.10.14
Page No. : 4/5
Marking:
a1
Pb Free Mark
Pb-Free: "
.
"
(Note)
H
Normal: None
J
5 0 N 0 3
Control Code
Note: Green label is used for pb-free packing
Pin Style: 1.Gate 2.Drain 3.Source
N
H
a5
L
a2
Material:
•
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
•
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM
A
C
F
G
H
L
M
N
a1
a2
a5
Min.
6.35
4.80
1.30
5.40
2.20
0.40
2.20
0.90
0.40
-
0.65
Max.
6.80
5.50
1.70
6.25
3.00
0.90
2.40
1.50
0.65
*2.30
1.05
*: Typical, Unit: mm
a1
3-Lead TO-252 Plastic
Surface Mount Package
HSMC Package Code: J
A
B
C
D
a1
E
Marking:
M
F
y1
a1
Pb-Free: "
.
"
(Note)
H
Normal: None
Pb Free Mark
J
5 0 N 0 3
Date Code
Control Code
GI
y1
y1
Note: Green label is used for pb-free packing
Pin Style: 1.Gate 2.Drain 3.Source
Material:
•
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
•
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
J
K
a2
y2
H
N
L
a2
y2
3-Lead TO-252 Plastic
Surface Mount Package
HSMC Package Code: J
a1
O
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
a1
a2
y1
y2
Min.
6.40
-
5.04
-
0.40
0.50
5.90
2.50
9.20
0.60
-
0.66
2.20
0.70
0.82
0.40
2.10
-
-
Max.
6.80
6.00
5.64
*4.34
0.80
0.90
6.30
2.90
9.80
1.00
0.96
0.86
2.40
1.10
1.22
0.60
2.50
5
o
3
o
*: Typical, Unit: mm
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
•
HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
•
Head Office
(Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
•
Factory 1:
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
H50N03J
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10
o
C~35
o
C Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Figure 1: Temperature profile
t
P
T
P
Ramp-up
T
L
Ts
max
Temperature
t
L
Spec. No. : MOS200514
Issued Date : 2005.01.01
Revised Date : 2005.10.14
Page No. : 5/5
Critical Zone
T
L
to T
P
Ts
min
t
S
Preheat
Ramp-down
25
t 25
o
C to Peak
Time
Profile Feature
Average ramp-up rate (T
L
to T
P
)
Preheat
- Temperature Min (Ts
min
)
- Temperature Max (Ts
max
)
- Time (min to max) (ts)
Tsmax to T
L
- Ramp-up Rate
Time maintained above:
- Temperature (T
L
)
- Time (t
L
)
Peak Temperature (T
P
)
Time within 5
o
C of actual Peak
Temperature (t
P
)
Ramp-down Rate
Time 25
o
C to Peak Temperature
3. Flow (wave) soldering (solder dipping)
Products
Pb devices.
Pb-Free devices.
Sn-Pb Eutectic Assembly
<3
o
C/sec
Pb-Free Assembly
<3
o
C/sec
100
o
C
150
o
C
60~120 sec
150
o
C
200
o
C
60~180 sec
<3
o
C/sec
<3
o
C/sec
183
o
C
60~150 sec
240
o
C +0/-5
o
C
10~30 sec
<6
o
C/sec
<6 minutes
217
o
C
60~150 sec
260
o
C +0/-5
o
C
20~40 sec
<6
o
C/sec
<8 minutes
Peak temperature
245
o
C
±5
o
C
260
o
C +0/-5
o
C
Dipping time
5sec
±1sec
5sec
±1sec
H50N03J
HSMC Product Specification
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