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H7050A-1

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器件类别:模拟混合信号IC    MCU监控芯片   

厂商名称:上海矽朋(Siproin)

厂商官网:http://www.siproin.com/index.html

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H70XXA-1
Low Power Voltage Detector
Features
Low power consumption
Low temperature coefficient
Built-in hysteresis characteristic
Battery checkers
Level selectors
Power failure detectors
High input voltage (up to 15V)
Output voltage accuracy: tolerance
±1%
or
±2%
TO92, SOT89 ,SOT23 and SOT23-3 package
Microcomputer reset
Battery memory backup
Non-volatile RAM signal storage protectors
Applications
General Description
The H70XXA-1 series devices are a set of three
terminal low power voltage detectors implemented
in CMOS technology. Each voltage detector in the
series detects a particular fixed voltage ranging
from 2.2V to 7.0V. The voltage detectors consist of
a high-precision and low power consumption
standard voltage source as well as a comparator,
hysteresis circuit, and an output driver. CMOS
technology ensures low power consumption.
Although designed primarily as fixed voltage
detectors, these devices can be used with external
components to detect user specified threshold
voltages.
Selection Table
Part No.
H7022A-1
H7024A-1
H7027A-1
H7030A-1
H7033A-1
H7036A-1
H7039A-1
H7040A-1
H7044A-1
H7050A-1
H7070A-1
Detectable
Voltage
2.2V
2.4V
2.7V
3.0V
3.3V
3.6V
3.9V
4.0V
4.4V
5.0V
7.0V
Hysteresis
Width
0.11V
0.12V
0.135V
0.15V
0.165V
0.18V
0.195V
0.2V
0.22V
0.25V
0.35V
PR
1
O
±2%
±2%
±2%
±2%
±2%
±2%
±2%
±2%
±2%
±2%
±2%
Tolerance
IN
Package
TO92
SOT89
Marking
70XXA-1(for TO92)
70XXA-1(for SOT89)
Note: For lead free devices, TO92 package will add a
“#”
mark at the end of the date code, whereas
SOT89 packages will add a
“#”
mark at the end of the marking.
Typical Application Circuits
Ver1.9
SI
Shanghai Siproin Microelectronics Co.
H70XXA-1
Low Power Voltage Detector
Order Information
H70①②A-1③④⑤
Designator
① ②
Symbol
Integer
N
C
T
P
M
N
R
G
Description
Output Voltage(2.2~7.0V)
NMOS
CMOS
Package:TO-92
Package:SOT89
Package:SOT23-3
Package:SOT23
RoHS / Pb Free
Halogen Free
Block Diagram
Output Table & Curve
V
DD
V
DD
>V
DET
(+)
V
OUT
Hi-Z
Ver1.9
SI
PR
V
DD
≤V
DET
(-)
V
SS
2
O
Shanghai Siproin Microelectronics Co.
IN
H70XXA-1
Low Power Voltage Detector
Pin Assignment
Absolute Maximum Ratings
Supply Voltage ................................-0.3V to16V
Operating Temperature .................-40℃ to 85℃
Note: These are stress ratings only. Stresses exceeding the range specified under “Absolute Maximum
Ratings” may cause substantial damage to the device. Functional operation of this device at other
conditions beyond those listed in the specification is not implied and prolonged exposure to extreme
conditions may affect device reliability.
Thermal Information
Symbol
SI
Parameter
PR
Power Dissipation
3
O
IN
Storage Temperature ..................-50℃ to 125℃
Package
SOT23
SOT89
TO92
SOT23
Max.
500
200
200
0.20
0.50
0.50
Unit
℃/W
℃/W
℃/W
W
W
W
θ
JA
Thermal Resistance (Junction to
Ambient) (Assume no ambient
airflow, no heat sink)
P
D
SOT89
TO92
Note: P
D
is measured at Ta= 25℃
Ver1.9
Shanghai Siproin Microelectronics Co.
H70XXA-1
Low Power Voltage Detector
Electrical Characteristics
H7022A-1XXX
Test Conditions
Symbol
Parameter
V
DD
V
DET
Detection Voltage
-
Conditions
-
2.156
0.02
V
DET
2.200
0.05
V
DET
2.244
0.1
V
DET
V
Min.
Typ.
Max.
Unit
Ta=25
V
HYS
Hysteresis Width
-
-
V
I
DD
Operating Current
8V
No Load
-
2
3
μA
V
DD
Operating Voltage
-
-
1.5
-
16
V
mA
I
OL
Output Sink Current
2V
IN
V
OUT
=0.2V
0.5
-
Min.
Conditions
-
2.352
0.02
V
DET
-
No Load
-
V
OUT
=0.2V
-
1.5
0.5
-
1
-
O
-
Test Conditions
V
DD
-
-
8V
-
2V
0℃<Ta<70℃
-
4
V
DET
T
a
Temperature
Coefficient
0℃<Ta<70℃
±0.9
-
mV/℃
PR
Parameter
Detection Voltage
Hysteresis Width
Operating Current
Operating Voltage
Output Sink Current
Temperature
Coefficient
H7024A-1XXX
Ta=25
Symbol
Typ.
Max.
Unit
V
DET
SI
2.400
0.05
V
DET
2.448
0.1
V
DET
V
V
HYS
V
I
DD
V
DD
I
OL
2
-
1
3
16
-
μA
V
mA
V
DET
T
a
±0.9
-
mV/℃
Ver1.9
Shanghai Siproin Microelectronics Co.
H70XXA-1
Low Power Voltage Detector
H7027A-1XXX
Test Conditions
V
DD
V
DET
Detection Voltage
-
Conditions
-
2.646
0.02
V
DET
2.700
0.05
V
DET
2.754
0.1
V
DET
V
Ta=25
Symbol
Parameter
Min.
Typ.
Max.
Unit
V
HYS
Hysteresis Width
-
-
V
I
DD
Operating Current
8V
No Load
-
2
3
μA
V
DD
I
OL
Operating Voltage
Output Sink Current
Temperature
Coefficient
-
2V
-
V
OUT
=0.2V
0℃<Ta<70℃
1.5
0.5
-
1
16
-
V
mA
V
DET
T
a
-
IN
-
Test Conditions
Conditions
-
2.940
Min.
-
-
-
0.02
V
DET
No Load
-
-
-
V
OUT
=0.2V
0℃<Ta<70℃
1.5
1.2
-
-
5
±0.9
-
mV/℃
O
H7030A-1XXX
Symbol
PR
Parameter
V
DD
8V
2V
Temperature
Coefficient
Ta=25
Typ.
Max.
Unit
SI
V
DET
Detection Voltage
3.000
3.060
V
V
HYS
Hysteresis Width
0.05
V
DET
0.1
V
DET
V
I
DD
Operating Current
2
3
μA
V
DD
I
OL
Operating Voltage
Output Sink Current
-
2.5
16
-
V
mA
V
DET
T
a
±0.9
-
mV/℃
Ver1.9
Shanghai Siproin Microelectronics Co.
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