H72XX-1
400mA Low Power LDO
Features
Low voltage drop: 0.17V@100mA
High input voltage: 15V
Low temperature coefficient
Large Output Current: >0.40A
Low Quiescent Current: 1.0uA
Output voltage accuracy: tolerance
±2%
Built-in current limiter
SOT89，SOT23-3 and SOT23-5 packages
Applications
Battery-powered equipment
Hand-Hold Equipment
GRS Receivers
Wireless LAN
General Description
even when the input/output voltage differential is small. Low power consumption and high accuracy is
achieved through CMOS and laser trimming technologies.
The H72XX-1 consists of a high-precision voltage reference, an error amplification circuit, and a current
limited output driver. Transient response to load variations have improved in comparison to the existing
series.
SOT89-3,SOT23-3
and SOT23-5 packages are available.
Order Information
H72①②-1③④
Designator
① ②
SI
Integer
P
③
M
M5
R
④
G
Ver1.9
Note:”①②” stands for output voltages. Other
voltages can be
specially customized.
PR
Symbol
O
Description
RoHS / Pb Free
Halogen Free
Output Voltage(1.5V~5.0V)
Package:SOT89-3
Package:SOT23-3
Package:SOT23-5
1
IN
The H72XX-1 series is a group of positive voltage output, three-pin regulators, that provide a high current
Shanghai Siproin Microelectronics Co.
H72XX-1
400mA Low Power LDO
Selection Table
Part No.
H7215-1XX
H7218-1XX
H7225-1XX
H7226-1XX
H7227-1XX
H7228-1XX
H7230-1XX
H7233-1XX
H7236-1XX
H7240-1XX
H7245-1XX
H7250-1XX
Output Voltage
1.5V
1.8V
2.5V
2.6V
2.7V
2.8V
3.0V
3.3V
3.6V
4.0V
4.5V
5.0V
SOT89
SOT23-3
SOT23-5
Package
Typical Application
Note1:Input capacitor CIN=1uF.
Note2:Ouput capacitor COUT=1uF/6.8uF(1uF Tantalum capacitor or 6.8uF ceramic
capacitor is recommended).
Ver1.9
SI
2
Shanghai Siproin Microelectronics Co.
PR
O
IN
H72XX-1
400mA Low Power LDO
Block Diagram
Pin Assignment
Absolute Maximum Ratings
Supply Voltage ................................-0.3V to 18V
Operating Temperature .................-40℃ to 85℃
Note: These are stress ratings only. Stresses exceeding the range specified under “Absolute Maximum
Ratings” may cause substantial damage to the device. Functional operation of this device at other
conditions beyond those listed in the specification is not implied and prolonged exposure to extreme
conditions may affect device reliability.
Storage Temperature ..................-40℃ to 125℃
SI
Ver1.9
PR
3
Shanghai Siproin Microelectronics Co.
O
IN
H72XX-1
400mA Low Power LDO
Electrical Characteristics
H72XX-1 for any output voltage
Parameter
Output Voltage
Output
Current*1
Low dropout*2
Line Regulation
Load Regulation
Output voltage
Temperature
Coefficiency
PSRR
Supply Current
Input Voltage
PSRR
Iss1
Vin
△Vout/(Ta·Vout)
Symbol
Vout
Iout
V
drop
△Vout1/(Vin·Vout)
△Vout
1.6V≤Vin≤8V
Iout=100mA
Vin= Vout+1V
1.0mA≤Iout≤100mA
Iout=30mA
Conditions
Vin=Vout+1V
1.0mA≤Iout≤30mA
Vin-Vout=1V
Min.
Vout×0.98
--
Typ.
--
400
（Ta=25℃）
Max.
Vout×1.02
--
Unit
V
mA
Refer to the next table
--
--
0.05
12
0.2
30
%/V
mV
IN
--
±100
--
40
1
--
--
3.5
Dropout Voltage Vdif（V）
Typ.
0.1
0.12
0.16
0.17
0.21
0.20
0.8
0.75
0
℃
≤Ta≤70
℃
F=1KHz
--
Ppm/
℃
O
Vin=Vout+1V
--
--
Conditions
Iout=60
mA
Iout=80
mA
Iout=100
mA
Iout=200
mA
Iout=500
mA
--
2
15
dB
uA
V
Electrical Characteristics by Output Voltage：
Output Voltage Vout(V)
Vout
≤
2.0V
SI
PR
4
Max.
0.12
0.14
0.18
0.18
0.24
0.22
0.85
0.80
2.0 <
Vout ≤
3.0
3.0 <
Vout ≤
4.0
4.0 <
Vout ≤
5.0
3.0 <
Vout ≤
4.0
4.0 <
Vout ≤
6.0
3.0 <
Vout ≤
4.0
4.0 <
Vout ≤
6.0
Ver1.9
Shanghai Siproin Microelectronics Co.
H72XX-1
400mA Low Power LDO
Typical Performance Characteristics
(1) Output Voltage vs Input voltage
SI
Ver1.9
PR
5
Shanghai Siproin Microelectronics Co.
O
IN
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