Tj Junction Temperature ................................................................................................................................ +150
Collector to Base Breakdown Voltage...................................................................................................... 80 V
BV
CEO
Collector to Emitter Breakdown Voltage................................................................................................... 80 V
BV
EBO
Emitter to Base Emitter Breakdown Voltage .............................................................................................. 5 V
I
C
Collector Current (DC)........................................................................................................................................ 2 A
Electrical Characteristics
(T
A
=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*V
BE(sat)
*h
FE
f
T
Cob
T
on
T
stg
T
f
Min.
80
80
5
-
-
-
-
240
-
-
-
-
-
Typ.
-
-
-
-
-
0.15
0.9
-
100
30
0.2
1.0
0.2
Max.
-
-
-
1000
1000
0.5
1.2
-
-
-
-
-
-
MHz
pF
uS
uS
uS
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Unit
V
V
V
nA
nA
V
V
I
C
=100uA
I
C
=10mA
I
E
=100uA
V
CB
=80V
V
EB
=5V
Test Conditions
I
C
=1A, I
B
=50mA
I
C
=1A, I
B
=50mA
V
CE
=2V, I
C
=500mA
V
CE
=2V, I
C
=500mA
V
CB
=10V, f=1MHz
I
B1
=-I
B2
=50mA, Duty Cycle≤1%
HA3669
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
10000
1000
Spec. No. : HA200210
Issued Date : 2000.11.01
Revised Date : 2005.01.20
Page No. : 2/4
Saturation Voltage & Collector Current
125 C
1000
o
V
CE(sat)
@ I
C
=20I
B
hFE
25 C
75 C
o
o
Saturation Voltage (mV)
100
75 C
25 C
125 C
o
o
o
100
hFE @ V
CE
=2V
10
1
10
100
1000
10000
10
1
10
100
1000
10000
Collector Current-I
C
(mA)
Collector Current-I
C
(mA)
Saturation Voltage & Collector Current
1000
25 C
o
Power Derating
800
700
Power Dissipation-PD (mW)
Saturation Voltage (mV)
600
500
400
300
200
100
75 C
o
125 C
V
BE(s at)
@ I
C
=20I
B
o
100
1
10
100
1000
10000
0
0
50
100
o
150
200
Collector Current-I
C
(mA)
Ambient Temperature-Ta ( C)
HA3669
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-92 Dimension
A
B
1
2
3
Spec. No. : HA200210
Issued Date : 2000.11.01
Revised Date : 2005.01.20
Page No. : 3/4
α
2
Marking:
Pb Free Mark
Pb-Free: "
.
"
(Note)
Normal: None
H
2 N
3 9 0 6
Control Code
α
3
Date Code
Note: Green label is used for pb-free packing
C
D
Pin Style: 1.Emitter 2.Collector 3.Base
Material:
•
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
•
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM
A
B
C
D
E
F
G
H
I
α1
α2
α3
Min.
4.33
4.33
12.70
0.36
-
3.36
0.36
-
-
-
-
-
Max.
4.83
4.83
-
0.56
*1.27
3.76
0.56
*2.54
*1.27
*5°
*2°
*2°
H
I
E
F
G
*: Typical, Unit: mm
α
1
3-Lead TO-92 Plastic Package
HSMC Package Code: A
TO-92 Taping Dimension
DIM
A
D
D1
D2
F1,F2
H
H1
H2
H2A
H3
H4
L
L1
P
P1
P2
T
T1
T2
W
W1
Min.
4.33
3.80
0.36
4.33
2.40
15.50
8.50
-
-
-
-
-
2.50
12.50
5.95
50.30
-
-
0.36
17.50
5.00
Max.
4.83
4.20
0.53
4.83
2.90
16.50
9.50
1
1
27
21
11
-
12.90
6.75
51.30
0.55
1.42
0.68
19.00
7.00
Unit: mm
H2
H2
H2A H2A
D2
A
H3
H4 H
L
L1
H1
F1F2
T2
T
T1
P1
P
P2
D1
D
W1
W
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
•
HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
•
Head Office
(Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
•
Factory 1:
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
电子工程世界
