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HA8550

-25V -1.5A PNP 外延平面型晶体管

器件类别:分立半导体   

厂商名称:台湾华昕(HSMC)

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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6108
Issued Date : 1997.09.05
Revised Date : 2004.11.23
Page No. : 1/5
HA8550
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HA8550 is designed for use in 2W output amplifier of portable radios in class B
push-pull operation.
Features
High total power dissipation (P
T
: 2W, T
C
=25°C)
High collector current (I
C
: 1.5A)
Complementary to HA8050
TO-92
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature ........................................................................................................................... -55 ~ +150
°C
Junction Temperature ................................................................................................................... +150
°C
Maximum
Maximum Power Dissipation
Total Power Dissipation (T
A
=25°C) ...................................................................................................................... 1 W
Total Power Dissipation (T
C
=25°C) ...................................................................................................................... 2 W
Maximum Voltages and Currents (T
A
=25°C)
V
CBO
Collector to Base Voltage........................................................................................................................... -40 V
V
CEO
Collector to Emitter Voltage ....................................................................................................................... -25 V
V
EBO
Emitter to Base Voltage ............................................................................................................................... -6 V
I
C
Collector Current .......................................................................................................................................... -1.5 A
I
B
Base Current ................................................................................................................................................. -0.5 A
Electrical Characteristics
(T
A
=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*V
BE(sat)
V
BE(on)
*h
FE1
*h
FE2
*h
FE3
f
T
Min.
-40
-25
-6
-
-
-
-
-
45
85
40
100
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-100
-100
-0.5
-1.2
-1
-
500
-
-
MHz
Unit
V
V
V
nA
nA
V
V
V
I
C
=-100uA
I
C
=-2mA
I
E
=-100uA
V
CB
=-35V
V
EB
=-6V
I
C
=-0.8A, I
B
=-80mA
I
C
=-0.8A, I
B
=-80mA
V
CE
=-1V, I
C
=-10mA
V
CE
=-1V, I
C
=-5mA
V
CE
=-1V, I
C
=-100mA
V
CE
=-1V, I
C
=-800mA
V
CE
=-10V, I
C
=-50mA, f=100MHZ
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Test Conditions
Classification on hFE2
Rank
Range
HA8550
C
120-200
D
160-320
E
250-500
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
1000
hFE @ V
CE
=1V
75 C
o
Spec. No. : HE6108
Issued Date : 1997.09.05
Revised Date : 2004.11.23
Page No. : 2/5
Saturation Voltage & Collector Current
1000
V
CE(SAT)
@ I
C
=10I
B
125 C
o
Saturation Voltage (mV)
100
o
125 C
75 C
25 C
10
o
o
hFE
100
25 C
o
10
0.1
1
10
100
1000
10000
1
1
10
100
1000
Collector Current I
C
(mA)
Collector Current I
C
(mA)
ON Voltage & Collector Current
10000
V
BE(ON)
@ V
CE
=1V
Cutoff Frequency & Collector Current
1000
Cutoff Frequency (MHz)
ON Voltage (mV)
25 C
1000
o
V
CE
=10V
100
75 C
o
125 C
o
100
1
10
100
1000
10
1
10
100
1000
Collector Current I
C
(mA)
Collector Current-I
C
(mA)
Capcitance & Reverse-Biased Voltage
100
10000
PT=1ms
PT=100ms
1000
Safe Operating Area
Capacitance (pF)
Cob
10
Collector Current-I
C
(mA)
PT=1s
100
10
1
0.1
1
10
100
1
1
10
100
Reverse-Biased Voltage (V)
Forward Voltage-V
CE
(V)
HA8550
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6108
Issued Date : 1997.09.05
Revised Date : 2004.11.23
Page No. : 3/5
PD - T
A
1.2
1
PD(W), Power Dissipation
0.8
0.6
0.4
0.2
0
0
50
100
o
150
200
Ambient Temperature-T
A
( C)
HA8550
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-92 Dimension
A
B
1
2
3
Spec. No. : HE6108
Issued Date : 1997.09.05
Revised Date : 2004.11.23
Page No. : 4/5
α
2
Marking:
Pb Free Mark
Pb-Free: "
.
"
(Note)
Normal: None
H
A
8 5 5 0
Control Code
α
3
Date Code
Note: Green label is used for pb-free packing
C
D
Pin Style: 1.Emitter 2.Base 3.Collector
Material:
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM
A
B
C
D
E
F
G
H
I
α1
α2
α3
Min.
4.33
4.33
12.70
0.36
-
3.36
0.36
-
-
-
-
-
Max.
4.83
4.83
-
0.56
*1.27
3.76
0.56
*2.54
*1.27
*5°
*2°
*2°
H
I
E
F
G
*: Typical, Unit: mm
α
1
3-Lead TO-92 Plastic Package
HSMC Package Code: A
TO-92 Taping Dimension
DIM
A
D
D1
D2
F1,F2
H
H1
H2
H2A
H3
H4
L
L1
P
P1
P2
T
T1
T2
W
W1
Min.
4.33
3.80
0.36
4.33
2.40
15.50
8.50
-
-
-
-
-
2.50
12.50
5.95
50.30
-
-
0.36
17.50
5.00
Max.
4.83
4.20
0.53
4.83
2.90
16.50
9.50
1
1
27
21
11
-
12.90
6.75
51.30
0.55
1.42
0.68
19.00
7.00
Unit: mm
H2
H2
H2A H2A
D2
A
H3
H4 H
L
L1
H1
F1F2
T2
T
T1
P1
P
P2
D1
D
W1
W
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its products without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Head Office
(Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
Factory 1:
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HA8550
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10
o
C~35
o
C Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Figure 1: Temperature profile
t
P
T
P
Ramp-up
T
L
Ts
max
Temperature
t
L
Spec. No. : HE6108
Issued Date : 1997.09.05
Revised Date : 2004.11.23
Page No. : 5/5
Critical Zone
T
L
to T
P
Ts
min
t
S
Preheat
Ramp-down
25
t 25
o
C to Peak
Time
Profile Feature
Average ramp-up rate (T
L
to T
P
)
Preheat
- Temperature Min (Ts
min
)
- Temperature Max (Ts
max
)
- Time (min to max) (ts)
Tsmax to T
L
- Ramp-up Rate
Time maintained above:
- Temperature (T
L
)
- Time (t
L
)
Peak Temperature (T
P
)
Time within 5
o
C of actual Peak
Temperature (t
P
)
Ramp-down Rate
Time 25
o
C to Peak Temperature
3. Flow (wave) soldering (solder dipping)
Products
Pb devices.
Pb-Free devices.
Sn-Pb Eutectic Assembly
<3
o
C/sec
100
o
C
150
o
C
60~120 sec
<3
o
C/sec
183
o
C
60~150 sec
240
o
C +0/-5
o
C
10~30 sec
<6
o
C/sec
<6 minutes
Pb-Free Assembly
<3
o
C/sec
150
o
C
200
o
C
60~180 sec
<3
o
C/sec
217
o
C
60~150 sec
260
o
C +0/-5
o
C
20~40 sec
<6
o
C/sec
<8 minutes
Peak temperature
245
o
C
±5
o
C
260
o
C +0/-5
o
C
Dipping time
5sec
±1sec
5sec
±1sec
HA8550
HSMC Product Specification
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