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HG9910M/TR

器件类别:其他集成电路(IC)    LED驱动   

厂商名称:华冠(HGSEMI)

厂商官网:http://www.hgsemi.net/

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HG9910
UNIVERSAL HIGH BRIGHTNESS LED DRIVER
FEATURES
Efficiency
Input voltage range
Withstanding input voltage surge
Output current range
String of LEDs
Constant-current LED driver
Linear and PWM dimming capability
PIN CONFIGURATION
>90%
10V to 600V
up to 600V
a few mA to more than 1A
1 pc to several hundreds
8-pin SO-8/DIP
VIN
CS
1
2
8
7
6
5
Rosc
CS
VDD
PWM-D
APPLICATIONS
DC/DC or AC/DC LED driver
RGB backlighting LED driver
Backlighting of flat panel displays
General-purpose constant current source
Signage and decorative LED lighting
Automotive
Chargers
GND
3
Gate
4
DESCRIPTION
The HG9910 is a PWM high-efficiency LED driver control IC. It allows efficient operation of high-
brightness (HB) LEDs from 10VDC up to 600VDC voltage sources. The circuit controls an external
MOSFET at fixed switching frequencies up to 300 kHz. The frequency can be programmed by using a
single resistor. The device peculiarity is that a LED string is driven at a constant current rather than at a
constant voltage, thus providing a constant light output and an enhanced reliability. The output current can
be programmed between a few milliamps and up to more than 1.0A. A rugged high-voltage junction
isolated process was used and enabled the device to withstand an input voltage surge up to 600V. The
output current to a LED string is programmable to any value between zero and its maximum value by
applying an external control voltage to the linear dimming control input. To allow the device to accept an
external control signal with a duty ratio of 0 to 100% and a frequency of up to a few kilohertz the circuit has
a low-frequency PWM dimming input.
TYPICAL APPLICATION CIRCUIT
C
IN
V
IN
V
DD
HG9910
C
DD
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1
2018 AUG
HG9910
ABSOLUTE MAXIMUM RATINGS
V
IN
to GND
CS, LD, PWM_D, GATE to GND
Continuous power dissipation (T
A
= +25°C)
(Note 1)
8-pin DIP (derate 9 mW/°C above +25°C)
8-pin SO-8 (derate 6.3 mW/°C above +25°C)
Operating temperature range
Junction temperature
Storage temperature range
-0.5V to +600V
-0.3V to V
DD
+0.3V
900mW
630mW
-40°C to +85°C
+125°C
-65°C to +150°C
Stresses beyond those listed under
ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not implied.
Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C unless noted otherwise)
SYMBOL
1
V
IN
DC
DESCRIPTION
MIN
TYP
MAX
UNITS
CONDITIONS
I
INSD
V
DD
ΔV
DD, load
Input DC supply voltage range
Shut-down mode supply current
Internally regulated voltage
V
DD
load regulation
10.0
0.5
7.0
0
7.5
-
600
1
8.0
100
V
mA
V
mV
DC input voltage
Pin PWM_D to GND, V
IN
= 8V
V
IN
= 10V to 600V, I
DD(ext)
= 0,
pin
GATE
is open
I
DD(ext)
= 0 to 1.0mA, 500pF at
GATE
; R
OSC
= 226kOhm,
PWM_D = V
DD
When an external voltage is
applied to pin V
DD
V
IN
= 10V to 100V
Rising V
IN
Falling V
IN
V
IN
= 10V to 600V
V
IN
= 10V to 600V
V
EN
= 5V
V
DD,max
I
DD(ext)
UVLO
ΔUVLO
V
EN(lo)
V
EN(hi)
R
EN
dV
CS
Maximal pin
V
DD
voltage
V
DD
current available for external
circuitry
V
DD
undervoltage lockout
threshold
V
DD
undervoltage lockout
hysteresis
Pin PWM_D input low voltage
Pin PWM_D input high voltage
Pin PWM_D pull-down
resistance
Accuracy of Current Sense
threshold voltage at wafer
testing
Current sense pull-in threshold
voltage
GATE high output voltage
GATE low output voltage
Oscillator frequency
Maximum oscillator PWM duty
cycle
Pin LD (linear dimming) voltage
range
Current sense blanking interval
Delay from CS to GATE lo
10.0
0.7
0.87* V
DD
0.89* V
DD
0.91* V
DD
V
mA
%
mV
500
0.8
2.0
50
-2.4%
100
0
150
2.4%
V
V
kOhm
%
V
CS(hi)
V
GATE(hi)
V
GATE(lo)
f
OSC
D
MAX hf
V
LD
T
BLANK
t
DELAY
238
V
DD
-0.3
0
20
80
250
262
V
DD
0.3
30
120
100%
250
mV
V
V
kHz
T
A
= -40°C to +85°C
I
OUT
= 10mA
I
OUT
= -10mA
R
OSC
= 1.00MOhm
R
OSC
= 226kOhm
F
PWM hf
= 25kHz, at GATE, CS
to GND
T
A
= <85°C, V
IN
= 12V
V
CS
= 0.55V
LD
, V
LD
= V
DD
V
IN
= 12V, V
LD
= 0.15, V
CS
= 0
to
0.22V after T
BLANK
C
GATE
= 500pF, V
DD
= 7.5V
C
GATE
= 500pF, V
DD
= 7.5V
25
100
0
150
215
mV
ns
ns
280
300
t
RISE
t
FALL
Note:
1.
GATE output rise time
GATE output fall time
30
30
50
50
ns
ns
Also limited by package power dissipation limit, whichever is lower.
http://www.hgsemi.com.cn
2
2018 AUG
HG9910
BLOCK DIAGRAM
Application Note
Oscillator
The oscillator in the HG9910 is controlled by a single resistor connected at the RT pin.
The equation governing the oscillator time period
t
OSC
is given by:
If the resistor is connected between RT and GND, HG9910 operates in a constant frequency
mode and the above equation determines the time-period. If the resistor is connected between
RT and GATE, the HG9910 operates in a constant off -time mode and the above equation
determines the offtime.
http://www.hgsemi.com.cn
3
2018 AUG
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