HGV8551/52
1.5MHZ Zero-Drift CMOS Rail-to-Rail IO Opamp with RF Filter
Features
•
•
•
•
•
•
•
Single-Supply Operation from +2.1V ~ +5.5V
Rail-to-Rail Input / Output
Gain-Bandwidth Product: 1.5MHz (Typ. @25°C)
Low Input Bias Current: 20pA (Typ. @25°C)
Low Offset Voltage: 5uV (Max. @25°C)
Quiescent Current: 320µA per Amplifier (Typ.)
Operating Temperature: -40°C ~ +125°C
•
•
•
Zero Drift: 0.05µV/ C (Max.)
Embedded RF Anti-EMI Filter
Small Package:
o
HGV8551 Available in SOT23-5 and SOP-8 Packages
HGV8552 Available in MSOP-8 and SOP-8 Packages
General Description
The HGV855X amplifier is single/dual supply, micro-power, zero-drift CMOS operational amplifiers, the amplifiers offer bandwidth
of 1.5MHz, rail-to-rail inputs and outputs, and single-supply operation from 2.1V to 5.5V. HGV855X uses
chopper stabilized
technique to provide very low offset voltage (less than 5µV maximum) and near zero drift over temperature. Low quiescent supply
current of 320µA per amplifier and very low input bias current of 20pA make the devices an ideal choice for low offset, low power
consumption and high impedance applications.
The
HGV855X
offers excellent CMRR without the crossover associated with
traditional complementary input stages. This design results in superior performance for driving analog-to-digital converters
(ADCs) without degradation of differential linearity.
The HGV8551 is available in SOT23-5 and SOP8 packages. And the HGV8552 is available in MSOP8 and SOP8 packages.The
extended temperature range of -40 C to +125 C over all supply voltages offers additional design flexibility.
o
o
Applications
•
•
•
Transducer Application
Temperature Measurements
Electronics Scales
•
•
Handheld Test Equipment
Battery-Powered Instrumentation
Pin Configuration
HGV8552
HGV8551
HGV8551Y
Figure 1. Pin Assignment Diagram
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2018 AUG
HGV8551/52
Absolute Maximum Ratings
Condition
Power Supply Voltage (V
DD
to Vss)
Analog Input Voltage (IN+ or IN-)
PDB Input Voltage
Operating Temperature Range
Junction Temperature
Storage Temperature Range
Lead Temperature (soldering, 10sec)
-55°C
+260°C
)
125°C/W
216°C/W
190°C/W
Min
-0.5V
Vss-0.5V
Vss-0.5V
-40°C
+160°C
+150°C
Max
+7.5V
V
DD
+0.5V
+7V
+125°C
SOP-8, θ
JA
MSOP-8, θ
JA
SOT23-5, θ
JA
ESD Susceptibility
HBM
MM
Note:
Stress greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions outside those indicated in the operational
sections of this specification are not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
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℃
Package Thermal Resistance (T
A
=+25
6KV
400V
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2018 AUG
HGV8551/52
Electrical Characteristics
PARAMETER
INPUT CHARACTERISTICS
Input Offset Voltage (V
OS
)
Input Bias Current (I
B
)
Input Offset Current (I
OS
)
Common-Mode
(CMRR)
Large Signal Voltage Gain ( A
VO
)
Input Offset Voltage Drift (∆V
OS
/∆
T
)
OUTPUT CHARACTERISTICS
Output Voltage High (V
OH
)
R
L
= 100kΩ to - V
S
R
L
= 10kΩ to - V
S
R
L
= 100kΩ to + V
S
R
L
= 10kΩ to + V
S
R
L
=10Ω to - V
S
4.998
4.994
2
5
43
30
Rejection
Ratio
V
CM
= 0V to 5V
R
L
= 10kΩ, V
O
= 0.3V to 4.7V
1
20
10
110
145
50
5
µV
pA
pA
dB
dB
V
V
mV
mV
mA
mA
Output Voltage Low (V
OL
)
Short Circuit Limit (I
SC
)
Output Current (I
O
)
POWER SUPPLY
Power Supply Rejection Ratio (PSRR)
Quiescent Current (I
Q
)
DYNAMIC PERFORMANCE
Gain-Bandwidth Product (GBP)
Slew Rate (SR)
Overload Recovery Time
NOISE PERFORMANCE
Voltage Noise (e
n
p-p)
Voltage Noise Density (e
n
)
V
S
= 2.5V to 5.5V
V
O
= 0V, R
L
= 0Ω
115
320
dB
µA
G = +100
R
L
= 10kΩ
1.5
0.84
0.10
MHz
V/µs
ms
0Hz to 10Hz
f = 1kHz
0.81
49
µV
P-P
nV
/
Hz
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3
2018 AUG
℃
℃
(V
S
= +5V, V
CM
= +2.5V, V
O
= +2.5V, T
A
= +25
, unless otherwise noted.)
CONDITIONS
MIN
TYP
MAX
UNITS
nV/
HGV8551/52
Typical Performance characteristics
Large Signal Transient Response at +5V
C
L
=300pF
R
L
=2kΩ
A
V
=+1
Large Signal Transient Response at +2.5V
C
L
=300pF
R
L
=2kΩ
A
V
=+1
Time(4µs/div)
Output Voltage (500mV/div)
Output Voltage (1V/div)
Time(2µs/div)
Small Signal Transient Response at +5V
C
L
=50pF
R
L
=∞
A
V
=+1
Small Signal Transient Response at +2.5V
C
L
=50pF
R
L
=∞
A
V
=+1
Output Voltage (50mV/div)
Time(4µs/div)
Output Voltage (50mV/div)
Time(4µs/div)
Closed Loop Gain vs. Frequency at +5V
G=-100
Closed Loop Gain (dB)
Closed Loop Gain (dB)
Closed Loop Gain vs. Frequency at +2.5V
G=-100
G=-10
G=-10
G=+1
G=+1
Frequency (kHz)
Frequency (kHz)
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2018 AUG
HGV8551/52
Typical Performance characteristics
Open Loop Gain, Phase Shift
vs. Frequency at +5V
Open Loop Gain, Phase Shift
vs. Frequency at +2.5V
Phase Shift(Degrees)
Phase Shift
V
L
=0pF
R
L
=∞
Phase Shift
V
L
=0pF
R
L
=∞
Open Loop Gain
Open Loop Gain
Frequency (Hz)
Frequency (Hz)
Positive Overvoltage Recovery
V
SY
= 2.5V
V
IN
=-200mVp-p
(RET to GND)
C
L
=0pF
R
L
=10kΩ
A
V
=-100
Negative Overvoltage Recovery
Open Loop Gain (dB)
V
SY
= 2.5V
V
IN
=-200mVp-p
(RET to GND)
C
L
=0pF
R
L
=10kΩ
A
V
=-100
Time (4µs/div)
Time (40µs/div)
0.1Hz to 10Hz Noise at +5V
G=10000
Noise (2mv/div)
Noise (2mv/div)
0.1Hz to 10Hz Noise at +2.5V
G=10000
Time (10s/div)
Time (10s/div)
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5
2018 AUG
Phase Shift(Degrees)
Open Loop Gain (dB)
Open Loop Gain (dB)
±
±
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