HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9027-B
Issued Date : 1996.11.06
Revised Date : 2000.11.01
Page No. : 1/3
HLB121I
NPN Triple Diffused Planar Type High Voltage Transistor
Description
The HLB121I is a medium power transistor designed for use in
switching applications.
Features
•
High breakdown voltage
•
Low collector saturation voltage
•
Fast switching speed
Absolute Maximum Ratings
(Ta=25°C)
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature .................................................................................................... +150
°C
•
Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) .................................................................................... 10 W
•
Maximum Voltages and Currents
BVCBO Collector to Base Voltage .................................................................................... 600 V
BVCEO Collector to Emitter Voltage................................................................................. 400 V
BVEBO Emitter to Base Voltage ........................................................................................... 6 V
IC Collector Current (DC)............................................................................................... 300 mA
IC Collector Current (Pulse)........................................................................................... 600 mA
IB Base Current (DC)....................................................................................................... 40 mA
IB Base Current (Pulse)................................................................................................. 100 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)
*hFE1
*hFE2
Min.
600
400
6
-
-
-
-
-
-
8
10
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
10
10
10
400
750
1
-
36
Unit
V
V
V
uA
uA
uA
mV
mV
V
Test Conditions
IC=100uA
IC=10mA
IE=10uA
VCB=550V
VCB=400V
VEB=6V
IC=50mA, IB=10mA
IC=100mA, IB=20mA
IC=50mA, IB=10mA
VCE=10V, IC=10mA
VCE=10V, IC=50mA
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Dc Current Gain & Collector Current
100
100000
Spec. No. : HE9027-B
Issued Date : 1996.11.06
Revised Date : 2000.11.01
Page No. : 2/3
Saturation Voltage & Collector Current
hFE @ V
CE
=10V
10
Saturation Voltage (mV)
10000
hFE
1000
V
BE(sat)
@ I
C
=5I
B
100
V
CE(sat)
@ I
C
=5I
B
1
1
10
100
1000
10
1
10
100
1000
Collector Current (mA)
Collector Current (mA)
On Voltage & Collector Current
10000
1000
Capacitance Reverse Biased Voltage
Collector Current (mA)
On Voltage-Bton
100
Cib
1000
Bton @ V
CE
=10V
10
Cob
100
0
100
200
300
400
500
600
1
0.1
1
10
100
Collector Current (mA)
Reverse Biased Voltage (V)
Switching Time & Collector Current
10
V
CC
=100V, I
C
=5I
B1
=-5I
B2
10000
Safe Operating Area
Switching Time (us)
Collector Current (mA)
1000
Ton
1
Tstg
100
P
T
=1ms
P
T
=100ms
P
T
=1s
Tf
0.1
0
100
200
300
400
500
600
10
0
50
100
150
200
250
Collector Current (mA)
Forward Biased Voltage (V)
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-251 Dimension
Marking :
HSMC Logo
Spec. No. : HE9027-B
Issued Date : 1996.11.06
Revised Date : 2000.11.01
Page No. : 3/3
A
B
C
D
Product Series
Rank
Part Number
Date Code
Ink Mark
F
3
I
E
K
2
1
G
Style : Pin 1.Base 2.Collector 3.Emitter
H
J
3-Lead TO-251 Plastic Package
HSMC Package Code : I
*:Typical
DIM
A
B
C
D
E
F
Inches
Min.
Max.
0.0177 0.0217
0.0354 0.0591
0.0177 0.0236
0.0866 0.0945
0.2520 0.2677
0.2677 0.2835
Millimeters
Min.
Max.
0.45
0.55
0.90
1.50
0.45
0.60
2.20
2.40
6.40
6.80
6.80
7.20
DIM
G
H
I
J
K
Inches
Min.
Max.
0.2559
-
-
*0.1811
-
0.0354
-
0.0315
0.2047 0.2165
Millimeters
Min.
Max.
6.50
-
-
*4.60
-
0.90
-
0.80
5.20
5.50
Notes :
1.Dimension and tolerance based on our Spec. dated May. 24,1995.
2.Controlling dimension : millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material :
•
Lead : 42 Alloy ; solder plating
•
Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
•
HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory :
•
Head Office
(Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454
•
Factory 1 :
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel : 886-3-5983621~5 Fax : 886-3-5982931
•
Factory 2 :
No. 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel : 886-3-5977061 Fax : 886-3-5979220
HSMC Product Specification
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