NPN Triple Diffused Planar Type High Voltage Transistor
Description
The HLB121D is a medium power transistor designed for use in switching
applications.
TO-126ML
Features
•
High breakdown voltage
•
Low collector saturation voltage
•
Fast switching speed
Absolute Maximum Ratings
(T
A
=25°C)
•
Maximum Temperatures
Storage Temperature ........................................................................................................................... -55 ~ +150
°C
Junction Temperature .................................................................................................................................... +150
°C
•
Maximum Power Dissipation
Total Power Dissipation (T
C
=25°C) .................................................................................................................... 10 W
•
Maximum Voltages and Currents
BV
CBO
Collector to Base Voltage....................................................................................................................... 600 V
BV
CEO
Collector to Emitter Voltage.................................................................................................................... 400 V
BV
EBO
Emitter to Base Voltage.............................................................................................................................. 6 V
I
C
Collector Current (DC) ............................................................................................................................... 300 mA
I
C
Collector Current (Pulse)............................................................................................................................ 600 mA
I
B
Base Current (DC)........................................................................................................................................ 40 mA
I
B
Base Current (Pulse).................................................................................................................................. 100 mA
Electrical Characteristics
(T
A
=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CEO
I
EBO
*V
CE(sat)1
*V
CE(sat)2
*V
BE(sat)
*h
FE1
*h
FE2
Min.
600
400
6
-
-
-
-
-
-
8
10
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
10
10
10
400
750
1
-
36
Unit
V
V
V
uA
uA
uA
mV
mV
V
I
C
=100uA
I
C
=10mA
I
E
=10uA
V
CB
=550V
V
CB
=400V
V
EB
=6V
I
C
=50mA, I
B
=10mA
I
C
=100mA, I
B
=20mA
I
C
=50mA, I
B
=10mA
V
CE
=10V, I
C
=10mA
V
CE
=10V, I
C
=50mA
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Test Conditions
HLB121D
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
100
100000
Spec. No. : HD200205
Issued Date : 2002.05.01
Revised Date : 2005.08.16
Page No. : 2/4
Saturation Voltage & Collector Current
V
CE(sat)
@ I
C
=5I
B
125 C
o
25 C
o
Saturation Voltage (mV)
10000
hFE
10
75 C
o
75 C
1000
o
125 C
100
o
hFE @ VCE=10V
25 C
o
1
0.1
1
10
100
1000
10
0.1
1
10
100
1000
Collector Current-I
C
(mA)
Collector Current-I
C
(mA)
Saturation Voltage & Collector Current
1000
25 C
o
Saturation Voltage (mV)
75 C
125 C
o
o
V
BE(sat)
@ I
C
=5I
B
100
0.1
1
10
100
1000
Collector Current-I
C
(mA)
HLB121D
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-126ML Dimension
A
C
D
E
H
LB
1 2 1D
Spec. No. : HD200205
Issued Date : 2002.05.01
Revised Date : 2005.08.16
Page No. : 3/4
Marking:
L
Pb Free Mark
Pb-Free: "
.
"
(Note)
Normal: None
I
B
1
F
H
G
M
2
3
Date Code
Control Code
Note: Green label is used for pb-free packing
Pin Style: 1.Emitter 2.Collector 3.Base
Material:
•
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
•
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
Min.
7.74
10.87
0.88
1.28
3.50
2.61
13
1.18
2.88
0.68
-
3.44
1.88
0.50
Max.
8.24
11.37
1.12
1.52
3.75
3.37
-
1.42
3.12
0.84
2.30
3.70
2.14
0.51
*: Typical, Unit: mm
K
J
N
3-Lead TO-126ML
Plastic Package
HSMC Package Code: D
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
•
HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
•
Head Office
(Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
•
Factory 1:
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
电子工程世界
