HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6703
Issued Date : 1992.11.25
Revised Date : 2002.05.08
Page No. : 1/4
HLB125E
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HLB125E is designed for lighting applications and low switch-mode
power supplies. And it is high voltage capability and high switching speeds.
Features
•
High Speed Switching
•
Low Saturation Voltage
•
High Reliability
TO-220
Internal Schematic Diagram
C
B
Absolute Maximum Ratings
E
•
Maximum Temperatures
Storage Temperature ........................................................................................................ -55 ~ +150
°C
Junction Temperature ................................................................................................................ +150
°C
•
Maximum Power Dissipation
Total Power Dissipation (Tc=25°C)................................................................................................. 40 W
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage.................................................................................................... 600 V
VCEO Collector to Emitter Voltage ................................................................................................ 400 V
VEBO Emitter to Base Voltage.......................................................................................................... 9 V
IC Collector Current (DC)................................................................................................................... 5 A
IC Collector Current (Pulse)............................................................................................................... 8 A
IB Base Current (DC)......................................................................................................................... 2 A
IB Base Current (Pulse) ..................................................................................................................... 4 A
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICES
ICEO
*VCE(sat)1
*VCE(sat)2
*VCE(sat)3
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
Min.
600
400
9
-
-
-
-
-
-
-
8
10
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
100
0.5
0.7
1.1
1.1
1.2
35
-
Unit
V
V
V
UA
uA
V
V
V
V
V
Test Conditions
IC=1mA, IE=0
IC=10mA, IB=0
IE=10mA, IC=0
VCE=700V
VCE=400V
IC=1A, IB=0.2A
IC=2A, IB=0.4A
IC=3A, IB=0.75A
IC=1A, IB=0.2A
IC=2A, IB=0.4A
IC=2A, VCE=5V
IC=10mA, VCE=5V
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Classification Of hFE1
Rank
hFE1
B1
8-17
B2
15-21
B3
19-25
B4
23-31
B5
29-35
HLB125E
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
100
75 C
125 C
o
o
Spec. No. : HE6703
Issued Date : 1992.11.25
Revised Date : 2002.05.08
Page No. : 2/4
Saturation Voltage & Collector Current
10000
V
CE(sat)
@ I
C
=4I
B
Saturation Voltage (mV)
1000
75 C
o
25 C
o
hFE
10
125 C
25 C
o
o
hFE @ V
CE
=5V
100
1
0.1
1
10
100
1000
10000
10
1
10
100
1000
10000
Collector Current-I
C
(mA)
Collector Current-I
C
(mA)
Saturation Voltage & Collcetor Current
100000
V
CE(sat)
@ I
C
=5I
B
10000
Saturation Voltage & Colltctor Current
V
BE(sat)
@ I
C
=5I
B
Saturation Voltage (mV)
125 C
o
o
Saturation Voltage (mV)
10000
75 C
1000
25 C
1000
o
75 C
o
125 C
o
100
25 C
o
10
1
10
100
1000
10000
100
1
10
100
1000
10000
Collector Current-I
C
(mA)
Collector Current-I
C
(mA)
ON Voltage & Collector Current
10000
1000
Capacitance & Reverse-Biased Voltage
On Voltage (mV)
Capacitance (Pf)
1000
100
V
BE(ON)
@ V
CE
=5V
Cob
100
1
10
100
1000
10000
10
0.1
1
10
100
Collector Current (mA)
Reverse-Biased Voltage (V)
HLB125E
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6703
Issued Date : 1992.11.25
Revised Date : 2002.05.08
Page No. : 3/4
Safe Operating Area
100000
10000
Collector Current (mA)
1000
100
P
T
=1 ms
P
T
=100 ms
P
T
=1 s
10
1
1
10
100
1000
10000
Forward Voltage (V)
HLB125E
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-220AB Dimension
Marking:
A
D
B
E
C
Date Code
Spec. No. : HE6703
Issued Date : 1992.11.25
Revised Date : 2002.05.08
Page No. : 4/4
H
125E
LB
Control Code
H
I
G
4
P
M
3
2
1
N
K
Style: Pin 1.Base 2.Collector 3.Emitter
O
3-Lead TO-220AB Plastic Package
HSMC Package Code: E
*: Typical
DIM
A
B
C
D
E
G
H
Inches
Min.
Max.
0.2197 0.2949
0.3299 0.3504
0.1732
0.185
0.0453 0.0547
0.0138 0.0236
0.3803 0.4047
-
*
0.6398
Millimeters
Min.
Max.
5.58
7.49
8.38
8.90
4.40
4.70
1.15
1.39
0.35
0.60
9.66
10.28
-
*
16.25
DIM
I
K
M
N
O
P
Inches
Min.
Max.
-
*
0.1508
0.0295 0.0374
0.0449 0.0551
-
*
0.1000
0.5000 0.5618
0.5701 0.6248
Millimeters
Min.
Max.
-
*
3.83
0.75
0.95
1.14
1.40
-
*
2.54
12.70
14.27
14.48
15.87
Notes:
1.Dimension and tolerance based on our Spec. dated Sep. 07,1997.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
•
Lead: 42 Alloy; solder plating
•
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
•
HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
•
Head Office
(Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
•
Factory 1:
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HLB125E
HSMC Product Specification
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