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HLB125HE

400V 4A NPN外延平面晶体管

器件类别:分立半导体   

厂商名称:台湾华昕(HSMC)

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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE200214
Issued Date : 2002.09.01
Revised Date : 2004.11.08
Page No. : 1/5
HLB125HE
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HLB125HE is designed for lighting applications and low switch-mode power
supplies. And it is high voltage capability and high switching speeds.
TO-220
Features
High Speed Switching
Low Saturation Voltage
High Reliability
Absolute Maximum Ratings
(T
A
=25°C)
Maximum Temperatures
Storage Temperature ........................................................................................................................... -50 ~ +150
°C
Junction Temperature ..................................................................................................................... 150
°C
Maximum
Maximum Power Dissipation
Total Power Dissipation (T
C
=25°C) .................................................................................................................... 75 W
Maximum Voltages and Currents (T
A
=25°C)
V
CEX
Collector to Emitter Voltage ...................................................................................................................... 700 V
V
CEO
Collector to Emitter Voltage ...................................................................................................................... 400 V
V
EBO
Emitter to Base Voltage ................................................................................................................................ 9 V
I
C
Collector Current (Continuous) .......................................................................................................................... 4 A
I
B
Base Current (Continuous) ................................................................................................................................ 2 A
Electrical Characteristics
(T
A
=25°C)
Symbol
BV
CEX
BV
CEO
I
EBO
I
CEX
*V
CE(sat)1
*V
CE(sat)2
*V
CE(sat)3
*V
BE(sat)
*V
BE(sat)
*h
FE
Min.
700
400
-
-
-
-
-
-
-
15
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
1
1
500
0.6
1
1.2
1.6
25
Unit
V
V
mA
mA
mV
V
V
V
V
I
C
=10mA
V
EB
=9V
V
CE
=700V, V
BE(off)
=1.5V
I
C
=1A, I
B
=200mA
I
C
=2A, I
B
=500mA
I
C
=4A, I
B
=1A
I
C
=1A, I
B
=200mA
I
C
=2A, I
B
=500mA
I
C
=2A, V
CE
=5V
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Test Conditions
I
C
=1mA, V
BE(off)
=1.5V
HLB125HE
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
100
Spec. No. : HE200214
Issued Date : 2002.09.01
Revised Date : 2004.11.08
Page No. : 2/5
Saturation Voltage & Collector Current
10000
125 C
o
75 C
o
V
CE(sat)
@ I
C
=5I
B
Saturation Voltage (mV)
1000
75 C
o
25 C
o
hFE
10
hFE @ V
CE
=5V
100
125 C
o
25 C
o
1
1
10
100
1000
10000
10
1
10
100
1000
10000
Collector Current-I
C
(mA)
Collector Current-I
C
(mA)
Saturation Voltage & Collector Current
1000
10000
Saturation Voltage & Collector Current
V
CE(sat)
@ I
C
=4I
B
V
BE(sat)
@ I
C
=5I
B
Saturation Voltage (mV)
75 C
100
125 C
25 C
o
o
o
Saturation Voltage (mV)
75 C
1000
25 C
o
o
125 C
o
10
100
1
10
100
1000
Collector Current-I
C
(mA)
10000
10
100
1000
10000
Collector Current-I
C
(mA)
Saturation Voltage & Collector Current
10000
V
BE(sat)
@ I
C
=4I
B
1000
Capacitance & Reverse-Biased Voltage
Saturation Voltage (mV)
Capacitance (pF)
100
75 C
1000
25 C
o
o
Cob
10
125 C
o
100
10
100
1000
10000
1
0.1
1
10
100
Collector Current-I
C
(mA)
Reverse-Biased (V)
HLB125HE
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE200214
Issued Date : 2002.09.01
Revised Date : 2004.11.08
Page No. : 3/5
Switching time vs Collector Current
10.0
Vcc=125V, IC=2A, IB1=IB2=0.4A
10
Safe Operating Area
Tstg
PT=10uS
Collector Current-I
C
(A)
Switching Time(us)
..
.
1
PT=1s
1.0
Ton
0.1
PT=1ms
PT=100ms
Toff
0.1
0.1
1
10
0.01
1
10
100
1000
10000
Collector Current(A)
Forward Voltage-V
CE
(V)
HLB125HE
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-220AB Dimension
Marking:
A
D
B
E
C
F
Pb Free Mark
Pb-Free: "
.
"
(Note)
Normal: None
H
Spec. No. : HE200214
Issued Date : 2002.09.01
Revised Date : 2004.11.08
Page No. : 4/5
LB
1 2 5 HE
Date Code
Control Code
H
I
G
Tab
P
L
J
M
3
2
1
O
N
K
Note: Green label is used for pb-free packing
Pin Style: 1.Base 2.Collector 3.Emitter
Material:
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Min.
5.58
8.38
4.40
1.15
0.35
2.03
9.66
-
-
3.00
0.75
2.54
1.14
-
12.70
14.48
Max.
7.49
8.90
4.70
1.39
0.60
2.92
10.28
*16.25
*3.83
4.00
0.95
3.42
1.40
*2.54
14.27
15.87
*: Typical, Unit: mm
3-Lead TO-220AB
Plastic Package
HSMC Package Code: E
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its products without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Head Office
(Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056
Fax: 886-2-25632712, 25368454
Factory 1:
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HLB125HE
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10
o
C~35
o
C Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Figure 1: Temperature profile
t
P
T
P
Ramp-up
T
L
Ts
max
Temperature
t
L
Spec. No. : HE200214
Issued Date : 2002.09.01
Revised Date : 2004.11.08
Page No. : 5/5
Critical Zone
T
L
to T
P
Ts
min
t
S
Preheat
Ramp-down
25
t 25
o
C to Peak
Time
Profile Feature
Average ramp-up rate (T
L
to T
P
)
Preheat
- Temperature Min (Ts
min
)
- Temperature Max (Ts
max
)
- Time (min to max) (ts)
Tsmax to T
L
- Ramp-up Rate
Time maintained above:
- Temperature (T
L
)
- Time (t
L
)
Peak Temperature (T
P
)
Time within 5
o
C of actual Peak
Temperature (t
P
)
Ramp-down Rate
Time 25
o
C to Peak Temperature
3. Flow (wave) soldering (solder dipping)
Products
Pb devices.
Pb-Free devices.
Sn-Pb Eutectic Assembly
<3
o
C/sec
100
o
C
150
o
C
60~120 sec
<3
o
C/sec
183
o
C
60~150 sec
240
o
C +0/-5
o
C
10~30 sec
<6
o
C/sec
<6 minutes
Pb-Free Assembly
<3
o
C/sec
150
o
C
200
o
C
60~180 sec
<3
o
C/sec
217
o
C
60~150 sec
260
o
C +0/-5
o
C
20~40 sec
<6
o
C/sec
<8 minutes
Peak temperature
245
o
C
±5
o
C
260
o
C +0/-5
o
C
Dipping time
5sec
±1sec
5sec
±1sec
HLB125HE
HSMC Product Specification
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