JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
SOT-89-3L
HM4033
TRANSISTOR (PNP)
1. BASE
FEATURES
High Current
General Purpose Amplifier Applications
MARKING:H4033
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-80
-80
-5
-1
500
250
150
-55~+150
2. COLLECTOR
3. EMITTER
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
*
DC current gain
h
FE(2)
*
h
FE(3)
*
h
FE(4)
*
Collector-emitter saturation voltage
V
CE(sat)
*
V
BE(sat)
*
f
T
C
ob
Test conditions
I
C
=-10µA,I
E
=0
I
C
=-10mA,I
B
=0
I
E
=-10µA,I
C
=0
V
CB
=-60V,I
E
=0
V
EB
=-5V,I
C
=0
V
CE
=-5V, I
C
=-0.1mA
V
CE
=-5V, I
C
=-100mA
V
CE
=-5V, I
C
=-500mA
V
CE
=-5V, I
C
=-1A
I
C
=-150mA,I
B
=-15mA
I
C
=-500mA,I
B
=-50mA
I
C
=-150mA,I
B
=-15mA
I
C
=-500mA,I
B
=-50mA
V
CE
=-10V,I
C
=-50mA, f=100MHz
V
CB
=-10V, I
E
=0, f=1MHz
100
20
75
100
70
25
-0.15
-0.5
-0.9
-1.1
V
V
V
V
MHz
pF
Min
-80
-80
-5
-100
-100
Typ
Max
Unit
V
V
V
nA
nA
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
*Pulse test
A,Nov,2010
电子工程世界
