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HM42

300V 0.5A NPN外延平面型晶体管

器件类别:分立半导体   

厂商名称:台湾华昕(HSMC)

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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9510
Issued Date : 1998.04.09
Revised Date : 2004.12.21
Page No. : 1/4
HM42
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HM42 is designed for application as a video output to drive color CRT, or as a
dialer circuit in electronics telephone.
SOT-89
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature ........................................................................................................................... -55 ~ +150
°C
Junction Temperature ................................................................................................................... +150
°C
Maximum
Maximum Power Dissipation
Total Power Dissipation (T
A
=25°C) ...................................................................................................................... 1 W
Maximum Voltages and Currents (T
A
=25°C)
V
CBO
Collector to Base Voltage ......................................................................................................................... 300 V
V
CEO
Collector to Emitter Voltage ...................................................................................................................... 300 V
V
EBO
Emitter to Base Voltage ................................................................................................................................ 6 V
I
C
Collector Current ....................................................................................................................................... 500 mA
Electrical Characteristics
(T
A
=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*V
BE(sat)
*h
FE1
*h
FE2
*h
FE3
f
T
Cob
Min.
300
300
6
-
-
-
-
25
40
40
50
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
3
Max.
-
-
-
100
100
500
900
-
-
-
-
-
MHz
pF
Unit
V
V
V
nA
nA
mV
mV
I
C
=100uA
I
C
=1mA
I
E
=10uA
V
CB
=260V
V
EB
=6V
I
C
=20mA, I
B
=2mA
I
C
=20mA, I
B
=2mA
V
CE
=10V, I
C
=1mA
V
CE
=10V, I
C
=10mA
V
CE
=10V, I
C
=30mA
V
CE
=20V, I
C
=10mA, f=100MHz
V
CB
=20V
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Test Conditions
HM42
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
1000
10000
Spec. No. : HE9510
Issued Date : 1998.04.09
Revised Date : 2004.12.21
Page No. : 2/4
Saturation Voltage & Collector Current
Saturation Voltage (mV)
100
V
CE
=10V
1000
V
BE(s at)
@ I
C
=10I
B
hFE
10
100
V
CE(sat)
@ I
C
=10I
B
1
0.1
1
10
100
1000
10
0.1
1
10
100
1000
Collector Current (mA)
Collector Current (mA)
Capacitance & Reverse-Biased Voltage
100
Cutoff Frequency & I
C
1000
Cutoff Frequency (MHz)
Capacitance (pF)
10
100
V
CE
=20V
Cob
1
0.1
1
10
100
1000
10
1
10
100
Reverse Biased Voltage (V)
Collector Current (mA)
Safe Operating Area
10000
P
T
=1ms
1000
P
T
=100ms
P
T
=1s
Collector Current-I
C
(mA)
100
10
1
1
10
100
Forward Biased Voltage-V
CE
(V)
HM42
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
SOT-89 Dimension
C
H
Marking:
Date Code
H 4 2
Control Code
Pb Free Mark
Pb-Free: " "
(Note)
Normal: None
Spec. No. : HE9510
Issued Date : 1998.04.09
Revised Date : 2004.12.21
Page No. : 3/4
B
1
E
F
G
A
2
3
D
Note: Green label is used for pb-free packing
J
I
Pin Style: 1.Base 2.Collector 3.Emitter
Material:
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM
A
B
C
D
E
F
G
H
I
Min.
4.40
4.05
1.50
2.40
0.36
*1.50
*3.00
1.40
0.35
Max.
4.60
4.25
1.70
2.60
0.51
-
-
1.60
0.41
*: Typical, Unit: mm
3-Lead SOT-89 Plastic
Surface Mounted Package
HSMC Package Code: M
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its products without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Head Office
(Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
Factory 1:
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HM42
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10
o
C~35
o
C Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Figure 1: Temperature profile
t
P
T
P
Ramp-up
T
L
Ts
max
Temperature
t
L
Spec. No. : HE9510
Issued Date : 1998.04.09
Revised Date : 2004.12.21
Page No. : 4/4
Critical Zone
T
L
to T
P
Ts
min
t
S
Preheat
Ramp-down
25
t 25
o
C to Peak
Time
Profile Feature
Average ramp-up rate (T
L
to T
P
)
Preheat
- Temperature Min (Ts
min
)
- Temperature Max (Ts
max
)
- Time (min to max) (ts)
Tsmax to T
L
- Ramp-up Rate
Time maintained above:
- Temperature (T
L
)
- Time (t
L
)
Peak Temperature (T
P
)
Time within 5
o
C of actual Peak
Temperature (t
P
)
Ramp-down Rate
Time 25
o
C to Peak Temperature
3. Flow (wave) soldering (solder dipping)
Products
Pb devices.
Pb-Free devices.
Sn-Pb Eutectic Assembly
<3
o
C/sec
100
o
C
150
o
C
60~120 sec
<3
o
C/sec
183
o
C
60~150 sec
240
o
C +0/-5
o
C
10~30 sec
<6
o
C/sec
<6 minutes
Pb-Free Assembly
<3
o
C/sec
150
o
C
200
o
C
60~180 sec
<3
o
C/sec
217
o
C
60~150 sec
260
o
C +0/-5
o
C
20~40 sec
<6
o
C/sec
<8 minutes
Peak temperature
245
o
C
±5
o
C
260
o
C +0/-5
o
C
Dipping time
5sec
±1sec
5sec
±1sec
HM42
HSMC Product Specification
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