Junction Temperature .................................................................................................................................... +150
Collector to Base Voltage........................................................................................................................... 75 V
V
CEO
Collector to Emitter Voltage ....................................................................................................................... 40 V
V
EBO
Emitter to Base Voltage................................................................................................................................ 6 V
I
C
Collector Current ........................................................................................................................................ 600 mA
Thermal Characteristic
Symbol
R
θja
Characteristic
Thermal Resistance, junction to ambient (T
A
=25
o
C)
Max.
556
Unit
o
C/W
Electrical Characteristics
(T
A
=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CEX
I
EBO
*V
CE(sat)1
*V
CE(sat)2
*V
BE(sat)1
*V
BE(sat)2
*h
FE1
*h
FE2
*h
FE3
*h
FE4
*h
FE5
f
T
Min.
75
40
6
-
-
-
-
-
0.6
-
35
50
75
100
40
300
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
10
10
10
500
1.0
1.2
2.0
-
-
-
300
-
-
MHz
Unit
V
V
V
nA
nA
nA
mV
V
V
V
I
C
=10uA
I
C
=10mA
I
C
=10uA
V
CB
=60V
V
CE
=60V, V
EB(OFF)
=3V
V
EB
=3V
I
C
=380mA, I
B
=10mA
I
C
=500mA, I
B
=50mA
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
V
CE
=10V, I
C
=100uA
V
CE
=10V, I
C
=1mA
V
CE
=10V, I
C
=10mA
V
CE
=10V, I
C
=150mA
V
CE
=10V, I
C
=500mA
V
CB
=20V, I
C
=20mA, f=100MHz
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
HMBT2222A
HSMC Product Specification
Test Conditions
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
1000
75
o
C
125 C
o
Spec. No. : HE6822
Issued Date : 1993.06.30
Revised Date :2010.08.06
Page No. : 2/5
Current Gain & Collector Current
1000
75
o
C
125
o
C
25
o
C
25
o
C
hFE
hFE
100
100
hFE @ V
CE
=1V
hFE @ V
CE
=10V
10
0.1
1
10
100
1000
10
0.1
1
10
100
1000
Collector Current-I
C
(mA)
Collector Current-I
C
(mA)
Saturation Voltage & Collector Current
1000
10000
Saturation Voltage & Collector Current
V
CE(sat)
@ I
C
=10I
B
V
CE(sat)
@ I
C
=38I
B
Saturation Voltage (mV)
Saturation Voltage (mV)
75
o
C
1000
75
o
C
25
o
C
125
o
C
100
25
o
C
125
o
C
100
10
0.1
1
10
100
1000
10
1
10
100
1000
Collector Current-I
C
(mA)
Collector Current-I
C
(mA)
Saturation Voltage & Collector Current
10000
Capacitance & Reverse-Biased Voltage
100
V
BE(sat)
@ I
C
=10I
B
Saturation Voltage (mV)
75
o
C
1000
25
o
C
Capacitance (pF)
10
Cob
125
o
C
100
0.1
1
10
100
1000
1
0.1
1
10
100
Collector Current-I
C
(mA)
Reverse Biased Voltage (V)
HMBT2222A
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Cutoff Frequency & IC
1000
250
Spec. No. : HE6822
Issued Date : 1993.06.30
Revised Date :2010.08.06
Page No. : 3/5
PD-Ta
V
CE
=20V
Power Dissipation-PD (mW)
200
Cutoff Frequency (MHz)
..
.
150
100
100
50
10
1
10
100
1000
0
0
50
100
o
150
200
Collector Current (mA)
Ambient Temperature-Ta ( C)
HMBT2222A
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
SOT-23 Dimension
Marking:
Spec. No. : HE6822
Issued Date : 1993.06.30
Revised Date :2010.08.06
Page No. : 4/5
DIM
A
Min.
2.80
1.20
0.89
0.30
1.70
0.013
0.085
0.32
0.85
2.10
0.25
Max.
3.04
1.60
1.30
0.50
2.30
0.10
0.177
0.67
1.15
2.75
0.65
A
L
3
1
B S
P
B
Pb Free: "
.
"
Halogen Free: "
. .
"
Normal: None
C
D
G
H
J
K
L
S
V
1
2
Note: Pb-free product can distinguish by the green
label or the extra description on the right
side of the label.
Pin Style: 1.Base 2.Emitter 3.Collector
Material:
•
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
•
Mold Compound: Epoxy resin family, flammability
solid burning class: UL94V-0
V
G
C
D
H
3-Lead SOT-23 Plastic
Surface Mounted Package
HSMC Package Code: N
K
J
*: Typical, Unit: mm
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
•
HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Regional Sales Headquarters:
•
Head Office(HSMC
CORP.): 3F., No.72, Sec.2, Nanjing E. Rd., Taipei, Taiwan, R.O.C.
Tel: +886-2-2521-2056, Fax: +886-2-2521-0452
•
Shanghai Office(AVANTICS):
No.399, Cai Lum Rd. Zhangjiang Technology Industrial Park Pudong, Shanghai 201210, China
电子工程世界
综合技术交流
