Junction To Ambient Rθja........................................................................................................................ 357
o
C/mW
Junction To Ambient Rθjc ........................................................................................................................ 170
o
C/mW
•
Maximum Voltages and Currents (T
A
=25°C)
V
CBO
Collector to Base Voltage ........................................................................................................................... 30 V
V
CES
Collector to Emitter Voltage ........................................................................................................................ 30 V
V
EBO
Emitter to Base Voltage .............................................................................................................................. 10 V
I
C
Collector Current ........................................................................................................................................ 300 mA
Electrical Characteristics
(T
A
=25°C)
Symbol
BV
CBO
BV
CES
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
V
BE(on)
*h
FE1
*h
FE2
f
T
Cob
Min.
30
30
10
-
-
-
-
5K
10K
125
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
100
1.5
2.0
-
-
-
6
MHz
pF
Unit
V
V
V
nA
nA
V
V
I
C
=100uA
I
C
=100uA
I
E
=10uA
V
CB
=30V
V
EB
=10V
I
C
=100mA, I
B
=0.1mA
V
CE
=5V, I
C
=100mA
V
CE
=5V, I
C
=10mA
V
CE
=5V, I
C
=100mA
V
CE
=5V, I
C
=10mA, f=100MHz
V
CB
=10V, f=1MHz
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Test Conditions
HMBTA13
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
1000k
10000
Spec. No. : HE6842
Issued Date : 1994.07.29
Revised Date : 2004.09.08
Page No. : 2/4
Saturation Voltage & Collector Current
hFE @ V
CE
=5V
100k
Saturation Voltage (mV)
hFE
1000
V
BE(sat)
@ I
C
=1000I
B
V
CE(sat)
@ I
C
=1000I
B
10k
0.1
1
10
100
1000
100
1
10
100
1000
Collector Current (mA)
Collector Current (mA)
On Voltage & Collector Current
10000
10
Capacitance & Reverse-Biased Voltage
On Voltage (mV)
1000
V
BE(on)
@ V
CE
=5V
Capacitance (pF)
Cob
100
0.1
1
10
100
1000
1
1
10
100
Collector Current (mA)
Reverse-Biased Voltage (V)
Cutoff Frequency & Collector Current
1000
250
Power Derating Curve
V
CE
=5V
Power Dissipation-PD (mW)
200
Cutoff Frequence (MHz)
150
100
100
50
10
1
10
100
1000
0
0
50
100
o
150
200
Collector Current (mA)
Ambient Temperature-Ta ( C)
HMBTA13
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
SOT-23 Dimension
Marking:
A
L
Spec. No. : HE6842
Issued Date : 1994.07.29
Revised Date : 2004.09.08
Page No. : 3/4
1
3
M
Pb Free Mark
Pb-Free: " "
(Note)
Normal: None
B S
1
2
Note: Pb-free product can distinguish by the green
label or the extra description on the right
side of the label.
Pin Style: 1.Base 2.Emitter 3.Collector
Material:
•
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
•
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
V
G
DIM
A
B
C
D
G
H
J
K
L
S
V
Min.
2.80
1.20
0.89
0.30
1.70
0.013
0.085
0.32
0.85
2.10
0.25
Max.
3.04
1.60
1.30
0.50
2.30
0.10
0.177
0.67
1.15
2.75
0.65
*: Typical, Unit: mm
C
D
H
3-Lead SOT-23 Plastic
Surface Mounted Package
HSMC Package Code: N
K
J
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
•
HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
•
Head Office
(Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
•
Factory 1:
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
电子工程世界
