HMC-ALH364
v03.0609
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 24 - 32 GHz
Features
Excellent Noise Figure: 2 dB
Gain: 21 dB
P1dB Output Power: +7 dBm
Supply Voltage: +5V @ 68 mA
Die Size: 1.49 x 0.73 x 0.1 mm
1
LOW NOISE AMPLIFIERS - CHIP
Typical Applications
This HMC-ALH364 is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• VSAT
• SATCOM
Functional Diagram
General Description
The HMC-ALH364 is a GaAs MMIC HEMT three
stage, self-biased Low Noise Amplifier die which
operates between 24 and 32 GHz. The amplifier
provides 21 dB of gain, a 2 dB noise figure and
+7 dBm of output power at 1 dB gain compression
while requiring only 68 mA from a single +5V supply.
The HMC-ALH364 amplifier die is ideal for integration
into Multi-Chip-Modules (MCMs) due to its small size
(1.09)mm2.
Electrical Specifi cations*
,
T
A
= +25° C, Vdd= +5V
Parameter
Frequency Range
Gain
Noise Figure
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression
Supply Current
*Unless otherwise indicated, all measurements are from probed die
5
18
Min.
Typ.
24 - 32
21
2
12
8
7
68
3
Max.
Units
GHz
dB
dB
dB
dB
dBm
mA
1 - 156
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
For price, delivery, and to place orders, please contact Hittite
Way, P.O. Box 9106, Norwood, MA 02062-9106
Microwave Corporation:
One Technology
20 Alpha Road, Chelmsford, MA 01824 Phone:
Phone: 781-329-4700
Fax: 978-250-3373
978-250-3343
• Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
Order On-line at www.hittite.com
HMC-ALH364
v03.0609
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 24 - 32 GHz
Noise Figure vs. Frequency
6
5
NOISE FIGURE (dB)
4
3
2
1
0
20
24
28
32
36
40
20
24
28
32
36
40
FREQUENCY (GHz)
FREQUENCY (GHz)
Linear Gain vs. Frequency
25
1
LOW NOISE AMPLIFIERS - CHIP
1 - 157
20
GAIN (dB)
15
10
5
0
Input Return Loss vs. Frequency
0
-5
-10
-15
-20
-25
-30
20
24
28
32
36
40
FREQUENCY (GHz)
Output Return Loss vs. Frequency
0
-5
RETURN LOSS (dB)
-10
-15
-20
-25
-30
20
24
28
32
36
40
FREQUENCY (GHz)
RETURN LOSS (dB)
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
For price, delivery, and to place orders, please contact Hittite
Way, P.O. Box 9106, Norwood, MA 02062-9106
Microwave Corporation:
One Technology
20 Alpha Road, Chelmsford, MA 01824 Phone:
Phone: 781-329-4700 • Order online at www.analog.com
978-250-3343 Fax: 978-250-3373
Application Support: Phone: 1-800-ANALOG-D
Order On-line at www.hittite.com
HMC-ALH364
v03.0609
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 24 - 32 GHz
1
LOW NOISE AMPLIFIERS - CHIP
Absolute Maximum Ratings
Drain Bias Voltage
Drain Bias Current
RF Input Power
Channel Temperature
Storage Temperature
Operating Temperature
+5.5 Vdc
130 mA
-9 dBm
180 °C
-65 to +150 °C
-55 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
Die Packaging Information
[1]
Standard
GP-5 (Gel Pack)
Alternate
[2]
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. TYPICAL BOND PAD IS .004” SQUARE.
3. BACKSIDE METALLIZATION: GOLD.
4. BACKSIDE METAL IS GROUND.
5. BOND PAD METALLIZATION: GOLD.
6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
7. OVERALL DIE SIZE ±.002”
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
1 - 158
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
For price, delivery, and to place orders, please contact Hittite
Way, P.O. Box 9106, Norwood, MA 02062-9106
Microwave Corporation:
One Technology
20 Alpha Road, Chelmsford, MA 01824 Phone:
Phone: 781-329-4700
Fax: 978-250-3373
978-250-3343
• Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
Order On-line at www.hittite.com
HMC-ALH364
v03.0609
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 24 - 32 GHz
Pad Descriptions
Pad Number
1
2
Function
RFIN
RFOUT
Description
This pad is AC coupled
and matched to 50 Ohms.
This pad is AC coupled
and matched to 50 Ohms.
Power Supply Voltage for the amplifier. See assembly for
required external components.
Interface Schematic
1
LOW NOISE AMPLIFIERS - CHIP
1 - 159
3
Vdd
Die bottom
GND
Die bottom must be connected to RF/DC ground.
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
For price, delivery, and to place orders, please contact Hittite
Way, P.O. Box 9106, Norwood, MA 02062-9106
Microwave Corporation:
One Technology
20 Alpha Road, Chelmsford, MA 01824 Phone:
Phone: 781-329-4700 • Order online at www.analog.com
978-250-3343 Fax: 978-250-3373
Application Support: Phone: 1-800-ANALOG-D
Order On-line at www.hittite.com
HMC-ALH364
v03.0609
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 24 - 32 GHz
1
LOW NOISE AMPLIFIERS - CHIP
Assembly Diagram
Note 1: Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils from the amplifier
Note 2: Best performance obtained from use of <10 mil (long) by 3 by 0.5mil ribbons on input and output.
1 - 160
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
For price, delivery, and to place orders, please contact Hittite
Way, P.O. Box 9106, Norwood, MA 02062-9106
Microwave Corporation:
One Technology
20 Alpha Road, Chelmsford, MA 01824 Phone:
Phone: 781-329-4700
Fax: 978-250-3373
978-250-3343
• Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
Order On-line at www.hittite.com
