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HMC562-SX

射频放大器 GaAs pHemt MMIC WBand amp, 2 -35 GHz

器件类别:半导体    无线和射频集成电路    射频放大器   

厂商名称:ADI(亚德诺半导体)

厂商官网:https://www.analog.com

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器件参数
参数名称
属性值
厂商名称
ADI(亚德诺半导体)
产品种类
射频放大器
发货限制
Mouser 目前在您所在地区不销售该产品。
安装风格
SMD/SMT
封装 / 箱体
Die
类型
Wideband Driver Amplifier
技术
GaAs
工作频率
2 GHz to 35 GHz
P1dB - 压缩点
14 dBm
增益
10 dB
工作电源电压
8 V
NF—噪声系数
5 dB
测试频率
27 GHz to 35 GHz
OIP3 - 三阶截点
22 dBm
工作电源电流
80 mA
最小工作温度
- 55 C
最大工作温度
+ 85 C
系列
HMC562
封装
Gel Pack
通道数量
1 Channel
输入返回损失
10 dB
Pd-功率耗散
2.3 W
工厂包装数量
2
文档预览
HMC562
v04.1108
GaAs PHEMT MMIC WIDEBAND
DRIVER AMPLIFIER, 2 - 35 GHz
Typical Applications
Features
P1dB Output Power: +18 dBm
Gain: 12.5 dB
Output IP3: +27 dBm
Supply Voltage: +8V @ 80 mA
50 Ohm Matched Input/Output
Die Size: 3.12 x 1.42 x 0.1 mm
2
DRIVER & GAIN BLOCK AMPLIFIERS - CHIP
The HMC562 wideband driver is ideal for:
• Military & Space
• Test Instrumentation
• Fiber Optics
Functional Diagram
General Description
The HMC562 is a GaAs MMIC PHEMT Distributed
Driver Amplifier die which operates between 2 and
35 GHz. The amplifier provides 12.5 dB of gain,
+19 dBm output IP3 and +12 dBm of output power
at 1 dB gain compression while requiring 80 mA
from a +8V supply. The HMC562 is ideal for EW,
ECM and radar driver amplifier applications. The
HMC562 amplifier I/O’s are DC blocked and internally
matched to 50 Ohms facilitating integration into Multi-
Chip-Modules (MCMs). All data is taken with the chip
connected via two 0.075mm (3 mil) ribbon bonds of
minimal length 0.31mm (12 mils).
Electrical Specifi cations,
T
A
= +25° C, Vdd= +8V, Idd= 80 mA*
Parameter
Frequency Range
Gain
Gain Flatness
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current
(Idd) (Vdd= 8V, Vgg = -0.8V Typ.)
15
9.5
Min.
Typ.
2.0 - 15.0
12.5
±0.4
0.01
14
16
18
21.5
27
3
80
100
14
0.02
8.5
Max.
Min.
Typ.
15.0 - 27.0
12
±0.35
0.01
13
15
17
20
24
3.5
80
100
10
0.02
7
Max.
Min.
Typ.
27.0 - 35.0
10
±1.3
0.02
10
12
14
16
22
5
80
100
0.03
Max.
Units
GHz
dB
dB
dB/ °C
dB
dB
dBm
dBm
dBm
dB
mA
* Adjust Vgg between -2 to 0V to achieve Idd= 80 mA typical.
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
2 - 34
For price, delivery, and to place orders: Analog Devices, Inc.,
For price, delivery, and to place orders, please contact Hittite
Way, P.O. Box 9106, Norwood, MA 02062-9106
Microwave Corporation:
One Technology
20 Alpha Road, Chelmsford, MA 01824 Phone:
Phone: 781-329-4700
Fax: 978-250-3373
978-250-3343
• Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
Order On-line at www.hittite.com
HMC562
v04.1108
GaAs PHEMT MMIC WIDEBAND
DRIVER AMPLIFIER, 2 - 35 GHz
Gain & Return Loss
15
10
5
RESPONSE (dB)
0
-5
-10
-15
-20
-25
0
5
10
15
20
25
30
35
40
FREQUENCY (GHz)
S21
S11
S22
Gain vs. Temperature
14
12
10
8
6
4
2
0
0
5
10
15
20
25
30
35
FREQUENCY (GHz)
+25C
+85C
-55C
2
DRIVER & GAIN BLOCK AMPLIFIERS - CHIP
2 - 35
Input Return Loss vs. Temperature
0
+25C
+85C
-55C
Output Return Loss vs. Temperature
0
+25C
+85C
-55C
-5
RETURN LOSS (dB)
GAIN (dB)
RETURN LOSS (dB)
25
30
35
-5
-10
-10
-15
-15
-20
-20
-25
0
5
10
15
20
FREQUENCY (GHz)
-25
0
5
10
15
20
25
30
35
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
0
-10
ISOLATION (dB)
-20
-30
-40
-50
-60
0
4
8
12
16
20
FREQUENCY (GHz)
Noise Figure vs. Temperature
7
6
NOISE FIGURE (dB)
+25C
+85C
-55C
5
4
3
2
1
0
0
5
10
15
+25C
+85C
-55C
20
25
30
35
FREQUENCY (GHz)
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
For price, delivery, and to place orders, please contact Hittite
Way, P.O. Box 9106, Norwood, MA 02062-9106
Microwave Corporation:
One Technology
20 Alpha Road, Chelmsford, MA 01824 Phone:
Phone: 781-329-4700 • Order online at www.analog.com
978-250-3343 Fax: 978-250-3373
Application Support: Phone: 1-800-ANALOG-D
Order On-line at www.hittite.com
HMC562
v04.1108
GaAs PHEMT MMIC WIDEBAND
DRIVER AMPLIFIER, 2 - 35 GHz
2
DRIVER & GAIN BLOCK AMPLIFIERS - CHIP
P1dB vs. Temperature
24
22
20
P1dB (dBm)
18
16
14
12
10
0
5
10
15
20
25
30
35
FREQUENCY (GHz)
+25C
+85C
-55C
Psat vs. Temperature
24
22
20
Psat (dBm)
18
16
14
12
10
0
5
10
15
20
25
30
35
FREQUENCY (GHz)
+25C
+85C
-55C
Output IP3 vs. Temperature
40
Gain, Power & Output IP3 vs.
Supply Voltage @ 10 GHz, Fixed Vgg
Gain (dB), P1dB (dBm), Psat (dBm), IP3 (dBm)
30
35
25
Gain
P1dB
Psat
IP3
IP3 (dBm)
30
20
25
+25C
+85C
-55C
15
20
15
0
5
10
15
20
25
30
35
FREQUENCY (GHz)
10
7.5
8
Vdd Supply Voltage (V)
8.5
Power Compression @ 10 GHz
24
Pout (dBm), GAIN (dB), PAE (%)
20
16
12
8
4
0
-10 -8
Pout
Gain
PAE
Power Compression @ 30 GHz
20
Pout (dBm), GAIN (dB), PAE (%)
Pout
Gain
PAE
16
12
8
4
-6
-4
-2
0
2
4
6
8
10 12 14
16
0
-10
-8
-6
-4
-2
0
2
4
6
8
10
12
INPUT POWER (dBm)
INPUT POWER (dBm)
2 - 36
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
For price, delivery, and to place orders, please contact Hittite
Way, P.O. Box 9106, Norwood, MA 02062-9106
Microwave Corporation:
One Technology
20 Alpha Road, Chelmsford, MA 01824 Phone:
Phone: 781-329-4700
Fax: 978-250-3373
978-250-3343
• Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
Order On-line at www.hittite.com
HMC562
v04.1108
GaAs PHEMT MMIC WIDEBAND
DRIVER AMPLIFIER, 2 - 35 GHz
Typical Supply Current vs. Vdd
Vdd (V)
+7.5
+8
+8.5
Idd (mA)
79
80
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
Gate Bias Voltage (Vgg)
RF Input Power (RFIN)(Vdd = +10 Vdc)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 26 mW/°C above 85 °C)
Thermal Resistance
(channel to die bottom)
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
+10 Vdc
-2.0 to 0 Vdc
+23 dBm
175 °C
2.3 W
39 °C/W
-65 to +150 °C
-55 to +85 °C
Class 1A
2
DRIVER & GAIN BLOCK AMPLIFIERS - CHIP
2 - 37
81
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
For price, delivery, and to place orders, please contact Hittite
Way, P.O. Box 9106, Norwood, MA 02062-9106
Microwave Corporation:
One Technology
20 Alpha Road, Chelmsford, MA 01824 Phone:
Phone: 781-329-4700 • Order online at www.analog.com
978-250-3343 Fax: 978-250-3373
Application Support: Phone: 1-800-ANALOG-D
Order On-line at www.hittite.com
HMC562
v04.1108
GaAs PHEMT MMIC WIDEBAND
DRIVER AMPLIFIER, 2 - 35 GHz
Outline Drawing
2
DRIVER & GAIN BLOCK AMPLIFIERS - CHIP
Die Packaging Information
[1]
Standard
GP-2
Alternate
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
NOTES:
1. ALL DIMENSIONS IN INCHES [MILLIMETERS]
2. DIE THICKNESS IS 0.004 (0.100)
3. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE
4. BOND PAD METALIZATION: GOLD
5. BACKSIDE METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND
7. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS
8. OVERALL DIE SIZE IS ±.002
2 - 38
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
For price, delivery, and to place orders, please contact Hittite
Way, P.O. Box 9106, Norwood, MA 02062-9106
Microwave Corporation:
One Technology
20 Alpha Road, Chelmsford, MA 01824 Phone:
Phone: 781-329-4700
Fax: 978-250-3373
978-250-3343
• Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
Order On-line at www.hittite.com
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