HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HA200406
Issued Date : 1992.11.25
Revised Date : 2004.08.13
Page No. : 1/3
HML1225/HXL1225
0.8A 300/380 VOLTAGE SCRS IGT<200uA
Description
The HML1225/HXL1225 series silicon controlled rectifiers are high performance
planner diffused PNPN devices. These parts are intended for low cost high volume
applications.
Absolute Maximum Ratings
(T
A
=25°C)
Parameter
Repetitive Peak Off State
Voltage
On-State Current
Average On-State Current
Peak Reverse Gate Voltage
Peak Gate Current
Gate Dissipation
Operating Temperature
Storage Temperature
Soldering Temperature
Part No.
HXL1225
HML1225
Symbol
V
DRM
V
DRM
I
T(rms)
I
T(AV)
V
GRM
I
GM
P
G(AV)
T
J
T
stg
T
sld
Min
380
300
0.8
0.5
8
1
0.1
-40
-40
-
Max
-
-
-
-
-
-
-
125
125
250
Unit
V
V
A
A
V
A
W
°C
°C
°C
TO-92
Test Conditions
T
J
=40°C to 125°C (R
GK
=1K)
T
C
=40°C
Half Cycle=180°,T
C
=40°C
I
GR
=10uA
10us max
20ms max
1.6mm from case 10s max
Classification Of IGT
Rank
HML1225
HXL1225
AA
10-18 uA
10-18 uA
AB
12-23 uA
12-23 uA
AC
17-28 uA
17-28 uA
AD
22-55 uA
22-55 uA
B
45-105 uA
45-105 uA
C
-
95-155 uA
Electrical Characteristics
(T
A
=25°C)
Parameter
Off-State Leakage Current
Off-State Leakage Current
On-State Voltage
On-State Threshold Voltage
On-State Slops Resistance
Gate Trigger Current
Gate Trigger Voltage
Holding Current
Latching Current
Critical Rate of Voltage Rise
Crtical Rate of Current Rise
Gate Controlled Delay Time
Commutated Turn-off Time
Thermal Resistance junc.to case
Thermal Resistance junc. to amb
HML1225, HXL1225
Symbol
I
DRM
I
DRM
V
T
V
T(TO)
r
T
I
GT
V
GT
I
H
I
L
dv/dt
di/dt
t
gd
t
g
R
θjc
R
θja
Min
-
-
-
-
-
-
-
-
-
-
25
30
-
-
100
200
Max
0.1
5
1.4
2.2
0.95
600
200
0.8
5
6
-
-
500
200
-
-
Unit
mA
uA
V
V
V
Ohm
uA
V
mA
mA
V/us
A/us
ns
us
K/W
K/W
Test Conditions
@V
DRM
(R
GK
=1K), T
J
=125°C
@V
DRM
(R
GK
=1K), T
J
=25°C
@ I
T
=0.4A, T
J
=25°C
@ I
T
=0.8A, T
J
=25°C
T
J
=125°C
T
J
=125°C
V
D
=7V
V
D
=7V
R
GK
=1K(ohm)
R
GK
=1K(ohm)
V
D
=0.67*V
DRM
(R
GK
=1K), T
J
=125°C
I
G
=10mA,diG/dt=0.1A/us, T
J
=125°C
I
G
=10mA,diG/dt=0.1A/us
T
C
=85°C,V
D
=0.67*V
DRM
V
R
=35V,I
T
=I
T(AV)
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-92 Dimension
A
B
1
2
3
Spec. No. : HA200406
Issued Date : 1992.11.25
Revised Date : 2004.08.13
Page No. : 2/3
α
2
Marking:
Pb Free Mark
Pb-Free: "
.
"
(Note)
Normal: None
Product Series
H
L
1 2 2 5
(M,X)
α
3
Date Code
Control Code
Note: Green label is used for pb-free packing
C
D
Pin Style: 1.Cathode 2.Gate 3.Anode
Material:
•
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
•
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM
A
B
C
D
E
F
G
H
I
α1
α2
α3
Min.
4.33
4.33
12.70
0.36
-
3.36
0.36
-
-
-
-
-
Max.
4.83
4.83
-
0.56
*1.27
3.76
0.56
*2.54
*1.27
*5°
*2°
*2°
H
I
E
F
G
*: Typical, Unit: mm
α
1
3-Lead TO-92 Plastic Package
HSMC Package Code: A
TO-92 Taping Dimension
DIM
A
D
D1
D2
F1,F2
H
H1
H2
H2A
H3
H4
L
L1
P
P1
P2
T
T1
T2
W
W1
Min.
4.33
3.80
0.36
4.33
2.40
15.50
8.50
-
-
-
-
-
2.50
12.50
5.95
50.30
-
-
0.36
17.50
5.00
Max.
4.83
4.20
0.53
4.83
2.90
16.50
9.50
1
1
27
21
11
-
12.90
6.75
51.30
0.55
1.42
0.68
19.00
7.00
Unit: mm
H2
H2
H2A H2A
D2
A
H3
H4 H
L
L1
H1
F1F2
T2
T
T1
P1
P
P2
D1
D
W1
W
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
•
HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
•
Head Office
(Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
•
Factory 1:
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HML1225, HXL1225
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10
o
C~35
o
C Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Figure 1: Temperature profile
t
P
T
P
Ramp-up
T
L
Ts
max
Temperature
t
L
Spec. No. : HA200406
Issued Date : 1992.11.25
Revised Date : 2004.08.13
Page No. : 3/3
Critical Zone
T
L
to T
P
Ts
min
t
S
Preheat
Ramp-down
25
t 25
o
C to Peak
Time
Profile Feature
Average ramp-up rate (T
L
to T
P
)
Preheat
- Temperature Min (Ts
min
)
- Temperature Max (Ts
max
)
- Time (min to max) (ts)
Tsmax to T
L
- Ramp-up Rate
Time maintained above:
- Temperature (T
L
)
- Time (t
L
)
Peak Temperature (T
P
)
Time within 5
o
C of actual Peak
Temperature (t
P
)
Ramp-down Rate
Time 25
o
C to Peak Temperature
3. Flow (wave) soldering (solder dipping)
Products
Pb devices.
Pb-Free devices.
Sn-Pb Eutectic Assembly
<3
o
C/sec
100
o
C
150
o
C
60~120 sec
<3
o
C/sec
183
o
C
60~150 sec
240
o
C +0/-5
o
C
10~30 sec
<6
o
C/sec
<6 minutes
Pb-Free Assembly
<3
o
C/sec
150
o
C
200
o
C
60~180 sec
<3
o
C/sec
217
o
C
60~150 sec
260
o
C +0/-5
o
C
20~40 sec
<6
o
C/sec
<8 minutes
Peak temperature
245
o
C
±5
o
C
260
o
C +0/-5
o
C
Dipping time
5sec
±1sec
5sec
±1sec
HML1225, HXL1225
HSMC Product Specification
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