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HPH2369

15V 0.5A NPN 外延平面型晶体管

器件类别:分立半导体   

厂商名称:台湾华昕(HSMC)

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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6133
Issued Date : 1993.06.18
Revised Date : 2005.02.05
Page No. : 1/5
HPH2369
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HPH2369 is designed for general purpose switching and amplifier
applications.
TO-92
Features
Low Collector Saturation Voltage
High speed switching Transistor
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature ........................................................................................................................... -55 ~ +150
°C
Junction Temperature ................................................................................................................... +150
°C
Maximum
Maximum Power Dissipation
Total Power Dissipation (T
A
=25°C) ............................................................................................................... 625 mW
Maximum Voltages and Currents (T
A
=25°C)
V
CBO
Collector to Base Voltage ........................................................................................................................... 40 V
V
CES
Collector to Emitter Voltage ........................................................................................................................ 40 V
V
CEO
Collector to Emitter Voltage ........................................................................................................................ 15 V
V
EBO
Emitter to Base Voltage ............................................................................................................................. 4.5 V
I
C
Collector Current ....................................................................................................................................... 500 mA
Electrical Characteristics
(T
A
=25°C)
Symbol
BV
CBO
BV
CEO
BV
CES
BV
EBO
I
CBO
I
CES
I
EBO
*V
CE(sat)1
*V
CE(sat)2
*V
CE(sat)3
*V
BE(sat)1
*V
BE(sat)2
*h
FE1
*h
FE2
f
T
Cob
Min.
40
15
40
4.5
-
-
-
-
-
-
700
-
40
20
500
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
80
-
-
-
Max.
-
-
-
-
400
300
100
250
300
600
850
1.5
120
-
-
4
MHz
pF
Unit
V
V
V
V
nA
nA
nA
mV
mV
mV
mV
V
I
C
=100uA, I
E
=0
I
C
=10mA, I
B
=0
I
C
=10uA, V
BE
=0
I
E
=10uA, I
C
=0
V
CB
=20V, I
E
=0
V
CE
=25V, V
BE
=0
V
EB
=2V, I
C
=0
I
C
=10mA, I
B
=1mA
I
C
=10mA, I
B
=0.3mA
I
C
=100mA, I
B
=10mA
I
C
=10mA, I
B
=1mA
I
C
=100mA, I
B
=1mA
I
C
=10mA, V
CE
=1V
I
C
=100mA, V
CE
=2V
I
C
=10mA, V
CE
=10V, f=100MHZ
V
CB
=5V, f=1MHz, I
E
=0
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
HPH2369
HSMC Product Specification
Test Conditions
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
100
125 C
25 C
75 C
o
o
o
Spec. No. : HE6133
Issued Date : 1993.06.18
Revised Date : 2005.02.05
Page No. : 2/5
Current Gain & Collector Current
100
125 C
25 C
75 C
o
o
o
hFE
10
hFE
hFE @ V
CE
=1V
10
hFE @ V
CE
=2V
1
1
1
10
100
1000
0.1
1
10
100
1000
Collector Current-IC (mA)
Collector Current-I
C
(mA)
Saturation Voltage & Collector Current
100000
10000
Saturation Voltage & Collector Current
Saturation Voltage (mV)
Saturation Voltage (mV)
10000
1000
1000
75 C
125 C
100
25 C
V
CE(sat)
@ I
C
=33I
B
10
0.1
1
10
100
1000
o
o
o
75 C
100
o
o
125 C
o
25 C
10
0.1
1
10
V
CE(sat)
@ I
C
=10I
B
100
1000
Collector Current-I
C
(mA)
Collector Current-I
C
(mA)
Saturation Voltage & Collector Current
10000
On Voltage & Collector Current
1
V
BE(on)
@ V
CE
=1V
Saturation Voltage (mV)
75 C
1000
25 C
o
o
125 C
V
BE(sat)
@ I
C
=10I
B
100
0.1
1
10
100
1000
o
On Voltage (mV)
0.1
0.1
1
10
100
Collector Current-I
C
(mA)
Collector Current (mA)
HPH2369
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6133
Issued Date : 1993.06.18
Revised Date : 2005.02.05
Page No. : 3/5
Capacitance & Reverse-Biased Voltage
10
10000
Cutoff Frequency & Collector Current
1000
Cutoff Frequency
(GHz)
Capacitance (pF)
fT @ V
CE
=10V
100
10
Cob
1
1
0.1
1
10
100
0.1
1
10
100
Reverse-Biased Voltage (V)
Collector Current-I
C
(mA)
Safe Operating Area
10000
PD-Ta
700
600
Collector Current-I
C
(mA)
1000
P
T
=1ms
P
T
=100ms
P
T
=1s
100
Power Dissipation-PD (mW)
500
400
300
200
100
0
10
1
1
10
100
0
50
100
o
150
200
Forward Voltage-V
CE
(V)
Ambient Temperature-Ta ( C)
HPH2369
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-92 Dimension
A
B
1
2
3
Spec. No. : HE6133
Issued Date : 1993.06.18
Revised Date : 2005.02.05
Page No. : 4/5
α
2
Marking:
Pb Free Mark
Pb-Free: "
.
"
(Note)
Normal: None
H
PH
2 3 6 9
Control Code
α
3
Date Code
Note: Green label is used for pb-free packing
C
D
Pin Style: 1.Collector 2.Base 3.Emitter
Material:
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM
A
B
C
D
E
F
G
H
I
α1
α2
α3
Min.
4.33
4.33
12.70
0.36
-
3.36
0.36
-
-
-
-
-
Max.
4.83
4.83
-
0.56
*1.27
3.76
0.56
*2.54
*1.27
*5°
*2°
*2°
H
I
E
F
G
*: Typical, Unit: mm
α
1
3-Lead TO-92 Plastic Package
HSMC Package Code: A
TO-92 Taping Dimension
DIM
A
D
D1
D2
F1,F2
H
H1
H2
H2A
H3
H4
L
L1
P
P1
P2
T
T1
T2
W
W1
Min.
4.33
3.80
0.36
4.33
2.40
15.50
8.50
-
-
-
-
-
2.50
12.50
5.95
50.30
-
-
0.36
17.50
5.00
Max.
4.83
4.20
0.53
4.83
2.90
16.50
9.50
1
1
27
21
11
-
12.90
6.75
51.30
0.55
1.42
0.68
19.00
7.00
Unit: mm
H2
H2
H2A H2A
D2
A
H3
H4 H
L
L1
H1
F1F2
T2
T
T1
P1
P
P2
D1
D
W1
W
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its products without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Head Office
(Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
Factory 1:
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HPH2369
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10
o
C~35
o
C Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Figure 1: Temperature profile
t
P
T
P
Ramp-up
T
L
Ts
max
Temperature
t
L
Spec. No. : HE6133
Issued Date : 1993.06.18
Revised Date : 2005.02.05
Page No. : 5/5
Critical Zone
T
L
to T
P
Ts
min
t
S
Preheat
Ramp-down
25
t 25
o
C to Peak
Time
Profile Feature
Average ramp-up rate (T
L
to T
P
)
Preheat
- Temperature Min (Ts
min
)
- Temperature Max (Ts
max
)
- Time (min to max) (ts)
Tsmax to T
L
- Ramp-up Rate
Time maintained above:
- Temperature (T
L
)
- Time (t
L
)
Peak Temperature (T
P
)
Time within 5
o
C of actual Peak
Temperature (t
P
)
Ramp-down Rate
Time 25
o
C to Peak Temperature
3. Flow (wave) soldering (solder dipping)
Products
Pb devices.
Pb-Free devices.
Sn-Pb Eutectic Assembly
<3
o
C/sec
100
o
C
150
o
C
60~120 sec
<3
o
C/sec
183
o
C
60~150 sec
240
o
C +0/-5
o
C
10~30 sec
<6
o
C/sec
<6 minutes
Pb-Free Assembly
<3
o
C/sec
150
o
C
200
o
C
60~180 sec
<3
o
C/sec
217
o
C
60~150 sec
260
o
C +0/-5
o
C
20~40 sec
<6
o
C/sec
<8 minutes
Peak temperature
245
o
C
±5
o
C
260
o
C +0/-5
o
C
Dipping time
5sec
±1sec
5sec
±1sec
HPH2369
HSMC Product Specification
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