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HSB1109S

-160V -0.1A PNP 外延平面型晶体管

器件类别:分立半导体   

厂商名称:台湾华昕(HSMC)

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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6514
Issued Date : 1993.03.15
Revised Date : 2005.02.14
Page No. : 1/5
HSB1109S
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HSB1109S is designed for low frequency and high voltage amplifier
applications complementary pair with HSD1609S.
TO-92
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature ........................................................................................................................... -50 ~ +150
°C
Junction Temperature ................................................................................................................... +150
°C
Maximum
Maximum Power Dissipation
Total Power Dissipation (T
A
=25°C) ............................................................................................................... 900 mW
Maximum Voltages and Currents (T
A
=25°C)
V
CBO
Collector to Base Voltage ........................................................................................................................ -160 V
V
CEO
Collector to Emitter Voltage ..................................................................................................................... -160 V
V
EBO
Emitter to Base Voltage ............................................................................................................................... -5 V
I
C
Collector Current ...................................................................................................................................... -100 mA
Electrical Characteristics
(T
A
=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
*V
CE(sat)
V
BE(on)
*h
FE1
*h
FE2
f
T
Cob
Min.
-160
-160
-5
-
-
-
60
30
-
-
Typ.
-
-
-
-
-
-
-
-
140
5.5
Max.
-
-
-
-10
-2
-1.5
320
-
-
-
MHz
pF
Unit
V
V
V
uA
V
V
I
C
=-10uA, I
E
=0
I
C
=-1mA. I
B
=0
I
E
=-10uA, I
C
=0
V
CB
=-140V, I
E
=0
I
C
=-30mA, I
B
=-3mA
V
CE
=-5V, I
C
=-10mA
V
CE
=-5V, I
C
=-10mA
V
CE
=-5V, I
C
=-1mA
V
CE
=-5V, I
C
=-10mA, f=100MHz
V
CB
=-10V, I
E
=0, f=1MHz
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Test Conditions
Classification Of h
FE1
Rank
Range
B
60-120
C
100-200
D
160-320
HSB1109S
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
1000
Spec. No. : HE6514
Issued Date : 1993.03.15
Revised Date : 2005.02.14
Page No. : 2/5
Saturation Voltage & Collector Current
1000
125 C
o
Saturation Voltage (mV)
75 C
100
125 C
o
o
hFE
25 C
100
75 C
o
o
25 C
o
hFE @ V
CE
=5V
V
CE(sat)
@ I
C
=10I
B
10
10
1
10
100
0.1
1
10
100
Collector Current-I
C
(mA)
Collector Current-I
C
(mA)
ON Voltage & Collector Current
1000
Output Capacitance &
Reverse-Blased Voltage
20
25 C
o
Output Capacttance-Cob (pF)
100
ON Voltage (mV)
15
75 C
125 C
o
o
10
5
V
BE(ON)
@ V
CE
=5V
100
0.1
1
10
0
0.1
1
10
100
1000
Collector Current-I
C
(mA)
Reverse-Biased-V
CB
(V)
Cutoff Frequency & Collector Current
1000
1000
Safe Operating Area
Cutoff Frequency (MHz)
100
Collector Current (mA)
100
10
10
1
0.1
1
10
100
1000
1
1
10
100
1000
Collector Current-I
C
(mA)
Forward Biased Voltage (V)
HSB1109S
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6514
Issued Date : 1993.03.15
Revised Date : 2005.02.14
Page No. : 3/5
Power Derating
1000
900
Power Dissipation-PD (mW)
800
700
600
500
400
300
200
100
0
0
20
40
60
80
100
o
120
140
160
Ambient Temperature-Ta ( C)
HSB1109S
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-92 Dimension
A
B
1
2
3
Spec. No. : HE6514
Issued Date : 1993.03.15
Revised Date : 2005.02.14
Page No. : 4/5
α
2
Marking:
Pb Free Mark
Pb-Free: "
.
"
(Note)
Normal: None
H
SB
1 1 0 9 S
Control Code
α
3
Date Code
Note: Green label is used for pb-free packing
C
D
Pin Style: 1.Emitter 2.Collector 3.Base
Material:
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM
A
B
C
D
E
F
G
H
I
α1
α2
α3
Min.
4.33
4.33
12.70
0.36
-
3.36
0.36
-
-
-
-
-
Max.
4.83
4.83
-
0.56
*1.27
3.76
0.56
*2.54
*1.27
*5°
*2°
*2°
H
I
E
F
G
*: Typical, Unit: mm
α
1
3-Lead TO-92 Plastic Package
HSMC Package Code: A
TO-92 Taping Dimension
DIM
A
D
D1
D2
F1,F2
H
H1
H2
H2A
H3
H4
L
L1
P
P1
P2
T
T1
T2
W
W1
Min.
4.33
3.80
0.36
4.33
2.40
15.50
8.50
-
-
-
-
-
2.50
12.50
5.95
50.30
-
-
0.36
17.50
5.00
Max.
4.83
4.20
0.53
4.83
2.90
16.50
9.50
1
1
27
21
11
-
12.90
6.75
51.30
0.55
1.42
0.68
19.00
7.00
Unit: mm
H2
H2
H2A H2A
D2
A
H3
H4 H
L
L1
H1
F1F2
T2
T
T1
P1
P
P2
D1
D
W1
W
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its products without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Head Office
(Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
Factory 1:
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HSB1109S
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10
o
C~35
o
C Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Figure 1: Temperature profile
t
P
T
P
Ramp-up
T
L
Ts
max
Temperature
t
L
Spec. No. : HE6514
Issued Date : 1993.03.15
Revised Date : 2005.02.14
Page No. : 5/5
Critical Zone
T
L
to T
P
Ts
min
t
S
Preheat
Ramp-down
25
t 25
o
C to Peak
Time
Profile Feature
Average ramp-up rate (T
L
to T
P
)
Preheat
- Temperature Min (Ts
min
)
- Temperature Max (Ts
max
)
- Time (min to max) (ts)
Tsmax to T
L
- Ramp-up Rate
Time maintained above:
- Temperature (T
L
)
- Time (t
L
)
Peak Temperature (T
P
)
Time within 5
o
C of actual Peak
Temperature (t
P
)
Ramp-down Rate
Time 25
o
C to Peak Temperature
3. Flow (wave) soldering (solder dipping)
Products
Pb devices.
Pb-Free devices.
Sn-Pb Eutectic Assembly
<3
o
C/sec
100
o
C
150
o
C
60~120 sec
<3
o
C/sec
183
o
C
60~150 sec
240
o
C +0/-5
o
C
10~30 sec
<6
o
C/sec
<6 minutes
Pb-Free Assembly
<3
o
C/sec
150
o
C
200
o
C
60~180 sec
<3
o
C/sec
217
o
C
60~150 sec
260
o
C +0/-5
o
C
20~40 sec
<6
o
C/sec
<8 minutes
Peak temperature
245
o
C
±5
o
C
260
o
C +0/-5
o
C
Dipping time
5sec
±1sec
5sec
±1sec
HSB1109S
HSMC Product Specification
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