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HSD313

60V 3A NPN外延平面型晶体管

器件类别:分立半导体   

厂商名称:台湾华昕(HSMC)

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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6728
Issued Date : 1993.04.12
Revised Date : 2004.11.19
Page No. : 1/5
HSD313
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HSD313 is designed for use in general purpose amplifier and switching
applications.
TO-220
Absolute Maximum Ratings
(T
A
=25°C)
Maximum Temperatures
Storage Temperature ........................................................................................................................... -50 ~ +150
°C
Junction Temperature ................................................................................................................... +150
°C
Maximum
Maximum Power Dissipation
Total Power Dissipation (T
A
=25°C) ...................................................................................................................... 2 W
Total Power Dissipation (T
C
=25°C) .................................................................................................................... 30 W
Maximum Voltages and Currents
BV
CBO
Collector to Base Voltage......................................................................................................................... 60 V
BV
CEO
Collector to Emitter Voltage...................................................................................................................... 60 V
BV
EBO
Emitter to Base Voltage .............................................................................................................................. 5 V
I
C
Collector Current ................................................................................................................................................ 3 A
Electrical Characteristics
(T
A
=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CEO
I
EBO
*V
CE(sat)
*V
BE(on)
*h
FE1
*h
FE2
f
T
Min.
60
60
5
-
-
-
-
-
40
40
-
Typ.
-
-
-
-
-
-
-
-
-
-
8
Max.
-
-
-
0.1
5
1
1
1.5
320
-
-
MHz
Unit
V
V
V
mA
mA
mA
V
V
I
C
=1mA, I
E
=0
I
C
=10mA, I
B
=0
I
E
=100uA, I
C
=0
V
CB
=20V, I
E
=0
V
CE
=60V, I
B
=0
V
EB
=4V, I
C
=0
I
C
=2A, I
B
=0.2A
I
C
=1A, V
CE
=2V
I
C
=1A, V
CE
=2V
I
C
=0.1A, V
CE
=2V
V
CE
=5V, I
C
=0.5A
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Test Conditions
Classification Of hFE1
Rank
hFE
C
40-80
D
60-120
E
100-200
F
160-320
HSD313
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
1000
o
Spec. No. : HE6728
Issued Date : 1993.04.12
Revised Date : 2004.11.19
Page No. : 2/5
Current Gain & Collector Current
1000
o
125 C
125 C
25 C
75 C
o
o
25 C
o
75 C
o
hFE
100
hFE
hFE @ V
CE
=2V
100
hFE @ V
CE
=4V
10
1
10
100
1000
10000
10
1
10
100
1000
10000
Collector Current-I
C
(mA)
Collector Current-I
C
(mA)
Saturation Voltage & Collector Current
1000
V
CE(sat)
@ I
C
=10I
B
10000
Saturation Voltage & Collector Current
V
CE(sat)
@ I
C
=50I
B
Saturation Voltage (mV)
Saturation Voltage (mV)
1000
25 C
75 C
100
125 C
o
o
o
100
25 C
125 C
o
o
75 C
o
10
1
10
100
1000
10000
10
1
10
100
1000
10000
Collector Current-I
C
(mA)
Collector Current-I
C
(mA)
ON Voltage & Collector Current
10000
V
BE(ON)
@ V
CE
=2V
Switching Time & Collector Current
10.00
V
CC
=30V, I
C
=10I
B1
= -10I
B2
Switching Times (us)
..
.
ON Voltage (mV)
1.00
Tstg
Ton
Tf
0.10
75 C
1000
25 C
o
o
125 C
o
100
1
10
100
1000
10000
0.01
0.1
1.0
10.0
Collector Current-I
C
(mA)
Collector Current (A)
HSD313
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6728
Issued Date : 1993.04.12
Revised Date : 2004.11.19
Page No. : 3/5
Capacitance & Reverse-Biased Voltage
100
Safe Operating Area
100000
P
T
=1ms
10000
P
T
=100ms
P
T
=1s
1000
Cob
10
Collector Current-I
C
(mA)
100
Capacitance (pF)
100
10
1
0.1
1
10
1
1
10
100
Revers-Biased Voltage (V)
Forward Voltage-V
CE
(V)
Output Characteristics at
IB=1mA,2mA,3mA...10mA
1600
1400
IB=10mA
IB=9mA
IB=8mA
IB=7mA
IB=6mA
IB=5mA
IB=4mA
IB=3mA
IB=2mA
IB=1mA
Collector Current (mA)
1200
1000
800
600
400
200
0
0
5
10
15
Collector Voltage (V)
HSD313
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-220AB Dimension
Marking:
A
D
B
E
C
F
Pb Free Mark
Pb-Free: "
.
"
(Note)
Normal: None
H
Spec. No. : HE6728
Issued Date : 1993.04.12
Revised Date : 2004.11.19
Page No. : 4/5
SD
313
Date Code
Control Code
H
I
G
Tab
P
L
J
M
3
2
1
O
N
K
Note: Green label is used for pb-free packing
Pin Style: 1.Base 2 & Tab.Collector 3.Emitter
Material:
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Min.
5.58
8.38
4.40
1.15
0.35
2.03
9.66
-
-
3.00
0.75
2.54
1.14
-
12.70
14.48
Max.
7.49
8.90
4.70
1.39
0.60
2.92
10.28
*16.25
*3.83
4.00
0.95
3.42
1.40
*2.54
14.27
15.87
*: Typical, Unit: mm
3-Lead TO-220AB
Plastic Package
HSMC Package Code: E
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its products without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Head Office
(Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
Factory 1:
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HSD313
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10
o
C~35
o
C Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Figure 1: Temperature profile
t
P
T
P
Ramp-up
T
L
Ts
max
Temperature
t
L
Spec. No. : HE6728
Issued Date : 1993.04.12
Revised Date : 2004.11.19
Page No. : 5/5
Critical Zone
T
L
to T
P
Ts
min
t
S
Preheat
Ramp-down
25
t 25
o
C to Peak
Time
Profile Feature
Average ramp-up rate (T
L
to T
P
)
Preheat
- Temperature Min (Ts
min
)
- Temperature Max (Ts
max
)
- Time (min to max) (ts)
Tsmax to T
L
- Ramp-up Rate
Time maintained above:
- Temperature (T
L
)
- Time (t
L
)
Peak Temperature (T
P
)
Time within 5
o
C of actual Peak
Temperature (t
P
)
Ramp-down Rate
Time 25
o
C to Peak Temperature
3. Flow (wave) soldering (solder dipping)
Products
Pb devices.
Pb-Free devices.
Sn-Pb Eutectic Assembly
<3
o
C/sec
100
o
C
150
o
C
60~120 sec
<3
o
C/sec
183
o
C
60~150 sec
240
o
C +0/-5
o
C
10~30 sec
<6
o
C/sec
<6 minutes
Pb-Free Assembly
<3
o
C/sec
150
o
C
200
o
C
60~180 sec
<3
o
C/sec
217
o
C
60~150 sec
260
o
C +0/-5
o
C
20~40 sec
<6
o
C/sec
<8 minutes
Peak temperature
245
o
C
±5
o
C
260
o
C +0/-5
o
C
Dipping time
5sec
±1sec
5sec
±1sec
HSD313
HSMC Product Specification
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