Junction Temperature ........................................................................................................................................ 150
Collector to Base Voltage .............................................................................................................................................. 25 V
V
CEO
Collector to Emitter Voltage........................................................................................................................................... 20 V
V
EBO
Emitter to Base Voltage ................................................................................................................................................... 5 V
I
C
Collector Current ................................................................................................................................................................. 1 A
Electrical Characteristics
(T =25°C)
A
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
*V
CE(sat)
V
BE(on)
*h
FE
f
T
Cob
Min.
25
20
5
-
-
-
120
-
-
Typ.
-
-
-
-
-
-
-
190
22
Max.
-
-
-
1
500
1
240
-
-
Unit
V
V
V
uA
mV
V
I
C
=10uA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10uA, I
C
=0
V
CB
=20V, I
E
=0
Test Conditions
I
C
=0.8A, I
B
=80mA
V
CE
=2V, I
C
=500mA
V
CE
=2V, I
C
=500mA
MHz
pF
V
CE
=2V, I
C
=500mA
V
CB
=10V, f=1MHz, I
E
=0
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Classification of h
FE
Rank
Range
C
120-240
HSD468
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
1000
1000.0
V
CE(sat)
@ I
C
=10I
B
Spec. No. : HE6535
Issued Date : 1992.11.25
Revised Date : 2006.07.27
Page No. : 2/5
Saturation Voltage & Collector Current
125 C
75 C
100
25 C
o
o
o
Saturation Voltage (mV)
hFE
100.0
o
25 C
hFE @ V
CE
=2V
10
1
10
100
1000
10.0
0.1
125 C
o
75 C
o
1
10
100
1000
Collector Current-IC (mA)
Collector Current-I
C
(mA)
ON Voltage & Collector Current
1000
Cutoff Frequency & Ic
1000
Cutoff Frequency (MHz)
..
.
75 C
o
ON Voltage (mV)
V
CE
=2V
25 C
125 C
o
o
100
V
BE(ON)
@ V
CE
=2V
100
0.1
1
10
100
1000
10
1
10
100
1000
Collector Current-IC (mA)
Collector Current (mA)
Capacitance & Reverse-Biased Voltage
100
10000
P
T
=1ms
P
T
=100m s
Safe Operating Area
Collector Current-I
C
(mA)
1000
P
T
=1s
100
Capacitance (pF)
10
Cob
10
1
0.1
1
10
100
1000
1
1
10
100
Reverse Biased Voltage (V)
Forward Voltage-Vce (V)
HSD468
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6535
Issued Date : 1992.11.25
Revised Date : 2006.07.27
Page No. : 3/5
Power Temperature Derating
1000
900
IR Reflow Profile
260
240
220
10+/-2 sec
PD , Power Dissipation (mW)
800
200
Temperature( C)
700
600
500
400
300
200
100
0
0
20
40
60
80
100
120
140
160
180
160
140
120
100
80
60
40
20
0
0
50
100
150
200
250
300
150+/-30
40+/-20 sec
o
Ta , Case Temperature (°C)
Time(sec)
Temperature Profile for Dip Soldering
300
10+/-2 sec
250
Temperature( C)
200
o
150
100
120+/-20 sec
50
0
0
50
100
150
200
250
300
350
Time(sec)
HSD468
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-92 Dimension
A
B
1
2
3
Spec. No. : HE6535
Issued Date : 1992.11.25
Revised Date : 2006.07.27
Page No. : 4/5
α
2
Marking:
Pb Free Mark
Pb-Free: "
.
"
(Note)
Normal: None
H
SD
4 6 8
Control Code
α
3
Date Code
Note: Green label is used for pb-free packing
C
D
Pin Style: 1.Emitter 2.Collector 3.Base
Material:
•
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
•
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM
A
B
C
D
E
F
G
H
I
α1
α2
α3
Min.
4.33
4.33
12.70
0.36
-
3.36
0.36
-
-
-
-
-
Max.
4.83
4.83
-
0.56
*1.27
3.76
0.56
*2.54
*1.27
*5°
*2°
*2°
H
I
E
F
G
*: Typical, Unit: mm
α
1
3-Lead TO-92 Plastic Package
HSMC Package Code: A
TO-92 Taping Dimension
DIM
A
D
D1
D2
F1,F2
H
H1
H2
H2A
H3
H4
L
L1
P
P1
P2
T
T1
T2
W
W1
Min.
4.33
3.80
0.36
4.33
2.40
15.50
8.50
-
-
-
-
-
2.50
12.50
5.95
50.30
-
-
0.36
17.50
5.00
Max.
4.83
4.20
0.53
4.83
2.90
16.50
9.50
1
1
27
21
11
-
12.90
6.75
51.30
0.55
1.42
0.68
19.00
7.00
Unit: mm
H2
H2
H2A H2A
D2
A
H3
H4 H
L
L1
H1
F1F2
T2
T
T1
P1
P
P2
D1
D
W1
W
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
•
HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
•
Head Office
(Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
•
Factory 1:
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
电子工程世界
综合技术交流
