Junction Temperature ...................................................................................................................................... +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (T
A
=25°C) ........................................................................................................................................ 1 W
Total Power Dissipation (T
C
=25°C) ...................................................................................................................................... 20 W
•
Maximum Voltages and Currents
BV
CBO
Collector to Base Voltage.......................................................................................................................................... 180 V
BV
CEO
Collector to Emitter Voltage ...................................................................................................................................... 160 V
BV
EBO
Emitter to Base Voltage................................................................................................................................................. 5 V
I
C
Collector Current (DC) ..................................................................................................................................................... 1.5 A
I
C
Collector Current (Pulse) .................................................................................................................................................... 3 A
Electrical Characteristics
(T =25°C)
A
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
*V
CE(sat)
V
BE(on)
*h
FE1
*h
FE2
f
T
Cob
Min.
180
160
5
-
-
-
100
30
-
-
Typ.
-
-
-
-
-
-
-
-
140
14
Max.
-
-
-
10
1
1.5
200
-
-
-
Unit
V
V
V
uA
V
V
I
C
=1mA, I
E
=0
I
C
=10mA, I
B
=0
I
E
=1mA, I
C
=0
V
CB
=160V, I
E
=0
Test Conditions
I
C
=500mA, I
B
=50mA
I
C
=150mA, V
CE
=5V
I
C
=150mA, V
CE
=5V
I
C
=500mA, V
CE
=5V
MHz
pF
I
C
=150mA , V
CE
=5V
V
CB
=10V, f=1MHz, I
E
=0
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Thermal Characteristics
Symbol
R
th-ja
R
th-jc
Parameter
Thermal resistance from junction to ambient
Thermal resistance from junction to case
Value
125
6.25
Unit
O
O
C/W
C/W
Classification Of h
FE1
Rank
Range
C
100-200
HSD669A
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
1000
Spec. No. : HE6630
Issued Date : 1995.12.18
Revised Date : 2006.07.27
Page No. : 2/4
Saturation Voltage & Collector Current
1000
125 C
o
Saturation Voltage (mV)
hFE
100
25 C
75 C
o
o
125 C
100
75 C
o
o
hFE @ VCE=5V
25 C
V
CE(sat)
@ I
C
=10I
B
o
10
1
10
100
1000
10000
10
10
100
1000
10000
Collector Current-I
C
(mA)
Collector Current-I
C
(mA)
Saturation Voltage & Collector Current
1000
25 C
o
ON Voltage & Collector Current
1000
25 C
75 C
o
o
Saturation Voltage (mV)
75 C
o
125 C
o
ON Voltage (mV)
125 C
V
BE(ON)
@ V
CE
=5V
o
V
BE(sat)
@ I
C
=10I
B
100
1
10
100
1000
10000
100
1
10
100
1000
10000
Collector Current-I
C
(mA)
Collector Current-I
C
(mA)
Capacitance & Reverse-Biased Voltage
100
100000
Safe Operating Area
Collector Current (mA)
10000
Capacitance (pF)
10
Cob
1000
100
P
T
=1ms
P
T
=100ms
P
T
=1s
1
0.1
1
10
100
10
1
10
100
1000
Reverse-Biased Voltage (V)
Forward Voltage (V)
HSD669A
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-126ML Dimension
A
C
D
E
H
SD
66 9A
Spec. No. : HE6630
Issued Date : 1995.12.18
Revised Date : 2006.07.27
Page No. : 3/4
Marking:
L
Pb Free Mark
Pb-Free: "
.
"
(Note)
Normal: None
I
B
1
F
H
G
M
2
3
Date Code
Control Code
Note: Green label is used for pb-free packing
Pin Style: 1.Emitter 2.Collector 3.Base
Material:
•
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
•
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
Min.
7.74
10.87
0.88
1.28
3.50
2.61
13
1.18
2.88
0.68
-
3.44
1.88
0.50
Max.
8.24
11.37
1.12
1.52
3.75
3.37
-
1.42
3.12
0.84
2.30
3.70
2.14
0.51
*: Typical, Unit: mm
K
J
N
3-Lead TO-126ML
Plastic Package
HSMC Package Code: D
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
•
HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
•
Head Office
(Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
•
Factory 1:
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
电子工程世界
