HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE200901
Issued Date : 2009.08.14
Revised Date :
Page No. : 1/4
HST04
TRIAC 600V,4A
Description
Passivated, sensitive gate triacs in a plastic envelope, intended for use in general
purpose bidirectional switching and phase control applications, where high
sensitivity is required in all four quadrants.
TO-220AB
Pin Configuration
Pin
1
2
3
tab
Description
Main terminal 1
Main terminal 2
Gate
Main terminal 2
tab
1 2 3
Symbol
T2
T1
G
Limtiing Values
Symbol
V
DRM
I
T(RMS)
I
TSM
I
2
t
dI
T
/dt
I
GM
P
G(AV)
Tstg
Tj
RMS on-state current
Non-repetitive peak on-state current(F=50Hz,tp=20ms)
I
2
t for fusing (IT=10ms)
Repetitive rate of rise of on-state current after triggering
(F=50Hz,IG=50mA,dIg/dt=0.1us)
Peak gate current(tp=20us,Tj=125°C)
Average gate power
Storage Temperature Range
Operating junction temperature
Parameter
Repetitive peak off-state voltages
Min.
-
-
-
-
-
-
-
-40
-40
Max.
600
4
40
8.0
10
2
1
150
125
Units
V
A
A
A
2
S
A/us
A
W
°C
°C
HST04 Series
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Electrical Characteristics
(Ta=25°C, unless otherwise stated,)
Symbol
I
GT
I
L
I
H
V
TM
V
GT
I
D
Parameter
Gate Trigger Current (V
D
=12V)
Latching Current
(I
T
=1.2 I
GT
,Tj=25°C)
Holding Current(I
T
=0.1A,)
On-state Voltage
(I
T
=5.5A,tp=380us,Tj=25°C)
Gate Trigger Voltage
(V
D
=12V, Tj=25°C)
Off-state Leakage Current T
C
=25°C
(V
D
= V
DRM
(max)
T
C
=125°C
Quadrant
I - II - III
IV
I - III- IV
II
Spec. No. : HE200901
Issued Date : 2009.08.14
Revised Date :
Page No. : 2/4
Rank
T
MAX
MAX
TYP
5
5
10
20
15
MAX
D
5
10
10
20
15
1.65
1.5
10
1
S
10
10
20
40
25
A
10
25
20
40
25
Unit
mA
mA
mA
mA
mA
V
V
uA
mA
ALL
Static Characteristics
Symbol
dV
D
/dt
Parameter
Critical rate of rise of
off-state voltage
Conditions
V
DM
=400VTj= 125°C; exponential
waveform; gate open circuit
Min.
-
Typ.
10
Max.
-
Unit
V/us
Thermal Resistances
Symbol
Rth j-c
Parameter
Thermal resistance junction to mounting base
Min.
Typ.
2.4
Max.
Unit
°C/W
HST04 Series
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-220AB Dimension
Marking:
A
D
B
E
C
F
Spec. No. : HE200901
Issued Date : 2009.08.14
Revised Date :
Page No. : 3/4
H
I
G
Tab
P
L
J
M
3
2
1
O
N
K
Note: Green label is used for pb-free packing
Pin Style: 1. Main terminal 1
2 & Tab. Main terminal 2
3.Gate
Material:
•
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
•
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Min.
5.58
8.38
4.40
1.15
0.35
2.03
9.66
-
-
3.00
0.75
2.54
1.14
-
12.70
14.48
Max.
7.49
8.90
4.70
1.39
0.60
2.92
10.28
*16.25
*3.83
4.00
0.95
3.42
1.40
*2.54
14.27
15.87
*: Typical, Unit: mm
3-Lead TO-220AB
Plastic Package
HSMC Package Code: E
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
•
HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
•
Head Office
(Hi-Sincerity Microelectronics Corp.):3F, No.72, Sec. 2, Nanjing E. Rd., Zhongshan Dist., Taipei City 104, Taiwan (R.O.C.).
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
HST04 Series
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10
o
C~35
o
C Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Figure 1: Temperature profile
t
P
T
P
Ramp-up
T
L
Ts
max
Temperature
t
L
Spec. No. : HE200901
Issued Date : 2009.08.14
Revised Date :
Page No. : 4/4
Critical Zone
T
L
to T
P
Ts
min
t
S
Preheat
Ramp-down
25
t 25
o
C to Peak
Time
Profile Feature
Average ramp-up rate (T
L
to T
P
)
Preheat
- Temperature Min (Ts
min
)
- Temperature Max (Ts
max
)
- Time (min to max) (ts)
Tsmax to T
L
- Ramp-up Rate
Time maintained above:
- Temperature (T
L
)
- Time (t
L
)
Peak Temperature (T
P
)
Time within 5
o
C of actual Peak
Temperature (t
P
)
Ramp-down Rate
Time 25
o
C to Peak Temperature
3. Flow (wave) soldering (solder dipping)
Products
Pb devices.
Pb-Free devices.
Sn-Pb Eutectic Assembly
<3
o
C/sec
100
o
C
150
o
C
60~120 sec
<3
o
C/sec
183
o
C
60~150 sec
240
o
C +0/-5
o
C
10~30 sec
<6
o
C/sec
<6 minutes
Pb-Free Assembly
<3
o
C/sec
150
o
C
200
o
C
60~180 sec
<3
o
C/sec
217
o
C
60~150 sec
260
o
C +0/-5
o
C
20~40 sec
<6
o
C/sec
<8 minutes
Peak temperature
245
o
C
±5
o
C
260
o
C +0/-5
o
C
Dipping time
5sec
±1sec
5sec
±1sec
HST04 Series
HSMC Product Specification
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