JIEJIE MICROELECTRONICS CO. , Ltd
JST41 Series
DESCRIPTION:
JST41 series triacs, with high ability to withstand
the shock loading of large current, provide high
dv/dt rate with strong resistance to electromagnetic
interface. With high commutation performances, 3
quadrants products especially recommended for use
on inductive load.
JST41Z provides insulation voltage rated at 2500V
RMS from all three terminals to external heatsink
complying with UL standards (File ref: E252906).
40A TRIACs
Rev.4.0
1 2
3
TO-3P
Insulated
1
23
TO-247
T1(1)
G(3)
MAIN FEATURES
Symbol
I
T(RMS)
Value
40
Unit
A
V
T2(2)
V
DRM
/V
RRM
600 and 800 and 1200 and 1600
ABSOLUTE MAXIMUM RATINGS
Parameter
Storage junction temperature range
Operating junction temperature range
Repetitive peak off-state voltage (T
j
=25℃)
Repetitive peak reverse voltage (T
j
=25℃)
Non repetitive surge peak Off-state voltage
Non repetitive peak reverse voltage
RMS on-state
current
TO-3P(Ins) (T
C
=80℃)
I
T(RMS)
40
A
Symbol
T
stg
T
j
V
DRM
V
RRM
V
DSM
V
RSM
Value
-40-150
-40-125
600/800/1200/1600
600/800/1200/1600
V
DRM
+100
V
RRM
+100
Unit
℃
℃
V
V
V
V
TO-247/ TG-C
(T
C
=90℃)
Non repetitive surge peak on-state current
(full cycle, F=50Hz)
I
2
t value for fusing (tp=10ms)
Critical rate of rise of on-state current
(I
G
=2×I
GT
)
TEL
：+86-513-83639777
I
TSM
I
2
t
dI/dt
- 1 / 6-
400
880
50
A
A
2
s
A/μs
http://www.jjwdz.com
JST41 Series
Peak gate current
Average gate power dissipation
Peak gate power
JieJie Microelectronics CO. , Ltd
I
GM
P
G(AV)
P
GM
4
1
10
A
W
W
ELECTRICAL CHARACTERISTICS
(T
j
=25℃ unless otherwise specified)
3 Quadrants
Symbol
I
GT
V
GT
V
GD
I
L
I
H
dV/dt
(dV/dt)c
Test Condition
V
D
=12V R
L
=33Ω
V
D
=V
DRM
T
j
=125℃
R
L
=3.3KΩ
I
G
=1.2I
GT
I
T
=100mA
V
D
=2/3V
DRM
Gate Open
T
j
=125℃
Without snubber T
j
=125℃
Quadrant
Ⅰ-Ⅱ-Ⅲ
Ⅰ-Ⅱ-Ⅲ
Ⅰ-Ⅱ-Ⅲ
Ⅰ-Ⅲ
Ⅱ
MAX
100
MAX
MIN
MIN
60
1000
20
mA
V/μs
V/μs
MAX
MAX
MIN
Value
50
1.3
0.2
80
mA
Unit
mA
V
V
4 Quadrants
Symbol
I
GT
V
GT
V
GD
I
L
I
H
dV/dt
(dV/dt)c
V
D
=V
DRM
T
j
=125℃
R
L
=3.3KΩ
I
G
=1.2I
GT
I
T
=100mA
V
D
=2/3V
DRM
Gate Open
T
j
=125℃
Without snubber T
j
=125℃
Test Condition
Quadrant
Ⅰ-Ⅱ-Ⅲ
V
D
=12V R
L
=33Ω
Ⅳ
ALL
ALL
Ⅰ-Ⅲ-Ⅳ
Ⅱ
MAX
100
MAX
MIN
MIN
80
500
30
mA
V/μs
V/μs
MAX
70
MAX
MIN
1.5
0.2
90
mA
V
V
Value
50
mA
Unit
TEL
：+86-513-83639777
- 2 / 6-
http://www.jjwdz.com
JST41 Series
STATIC CHARACTERISTICS
Symbol
V
TM
I
DRM
I
RRM
Parameter
I
TM
=60A tp=380μs
V
D
=V
DRM
V
R
=V
RRM
JieJie Microelectronics CO. , Ltd
Value(MAX)
T
j
=25℃
T
j
=25℃
T
j
=125℃
1.55
10
5
Unit
V
μA
mA
THERMAL RESISTANCES
Symbol
R
th(j-c)
Parameter
TO-3P(Ins)
junction to case(AC)
TO-247/ TG-C
0.8
Value
0.9
Unit
℃/W
ORDERING INFORMATION
J
JieJie Microelectronics Co.,Ltd
ST
Triacs
41
Z
-600
BW
I
T(RMS)
:40A
Z:TO-3P(Ins)
S:TO-247 T:TG-C
BW:I
GT3
≤50mA
B:I
GT1-3
≤50mA
I
GT4
≤70mA
600:V
DRM
/V
RRM
≥600V
800:V
DRM
/V
RRM
≥800V
1200:V
DRM
/V
RRM
≥1200V
1600:V
DRM
/V
RRM
≥1600V
TEL
：+86-513-83639777
- 3 / 6-
http://www.jjwdz.com
JST41 Series
PACKAGE MECHANICAL DATA
R
2-
5
0.
JieJie Microelectronics CO. , Ltd
Dimensions
Ref.
Millimeters
Min.
A
B
C
D
4.40
1.45
14.35
0.50
2.70
15.80
20.40
15.10
5.40
1.10
1.35
2.80
4.35
Typ.
Max.
4.60
1.55
15.60
0.70
2.90
16.50
21.10
15.50
5.65
1.40
1.50
3.00
Min.
0.173
0.057
0.565
0.020
0.106
0.622
0.803
0.594
0.213
0.043
0.053
0.110
0.171
Inches
Typ.
Max.
0.181
0.061
0.614
0.028
0.114
0.650
0.831
0.610
0.222
0.055
0.059
0.118
H
Φ
ax
M
2
4.
m
m
A
B
R
G
E
F
F
G
L
C
E
H
J
K
L
P
J
K
D
P
R
TO-3P Ins
TEL
：+86-513-83639777
- 4 / 6-
http://www.jjwdz.com
JST41 Series
PACKAGE MECHANICAL DATA
JieJie Microelectronics CO. , Ltd
MARKING
TEL
：+86-513-83639777
- 5 / 6-
http://www.jjwdz.com
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