JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92S Plastic-Encapsulate Transistors
ＴＯ－９２Ｓ
1.SOURCE
K596
Si N-CHANNEL JUNCTION FET
FEATURES
Power dissipation
P
CM
: 0.1W（Tamb=25℃）
Gate Current
I
G
: 10mA
Drain current
I
D
: 1mA
Drain-Source voltage
BV
GDO
: -20
V
Operating and storage junction temperature range
T
J
，T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS（Tamb=25℃
Parameter
Gate-Drain breakdown Voltage
Gate-Source cut-off Voltage
Drain Current
Forward Transfer Admittance
Input Capacitance
Symbol
BV
GDO
V
GS(off)
I
DSS
|Y
FS
|
C
iss
2.GATE
3.DRAIN
123
unless
Test
otherwise
specified）
MIN
-20
-0.6
100
0.4
1.2
3.5
-1.5
800
TYP
MAX
UNIT
V
V
μA
½Ｓ
pF
conditions
I
G
= -100μA
V
DS
= 5V , I
D
=1μA
V
DS
= 5 V , V
GS
=0
V
DS
= 5V , V
GS
=0, f=1KHz
V
DS
=5V, V
GS
=0, f=1MHz
V
DS
= 5 V, V =0
GS
Output Capacitance
C
RSS
0.65
pF
f =
1MHz
I
DSS
Classification
Classification
I
DSS
(µA)
A
100-170
B
150-240
C
210-350
D
320-480
E
440-800
TO-92S PACKAGE OUTLINE DIMENSIONS
D
D1
θ
A
E
b
L
e
e1
Symbol
A
A1
b
c
D
D1
E
e
e1
L
θ
Dimensions In Millimeters
Min
1.240
0.660
0.380
0.360
3.850
2.970
3.010
1.270TYP
2.440
15.100
45°TYP
2.640
15.500
Max
1.620
0.860
0.550
0.510
4.150
3.270
3.310
Min
A1
Dimensions In Inches
Max
0.064
0.034
0.022
0.020
0.163
0.129
0.130
0.050TYP
0.096
0.594
45°TYP
0.104
0.610
0.056
0.026
0.015
0.014
0.152
0.117
0.119
c
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