首页 > 器件类别 > 分立半导体 > 二极管

KBJ2010

25 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE

器件类别:分立半导体    二极管   

厂商名称:强茂(PANJIT)

厂商官网:http://www.panjit.com.tw/

器件标准:

下载文档
器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
强茂(PANJIT)
Reach Compliance Code
_compli
Is Samacsys
N
配置
BRIDGE, 4 ELEMENTS
二极管类型
BRIDGE RECTIFIER DIODE
最大正向电压 (VF)
1.1 V
最大非重复峰值正向电流
300 A
元件数量
4
最高工作温度
150 °C
最大输出电流
20 A
最大重复峰值反向电压
1000 V
表面贴装
NO
Base Number Matches
1
文档预览
DATA SHEET
KBJ2000~KBJ2010
SILICON BRIDGE RECTIFIERS
VOLTAGE - 50 to 1000 Volts CURRENT - 25.0 Amperes
FEATURES
• Plastic material has Underwriters Laboratory
Flammability Classification 94V-O
• Ideal for printed circuit board
• Reliable low cost construction utilizing molded plastic technique
• Surge overload rating: 400 Amperes
• High temperature soldering guaranteed:
260° C/10 seconds/.375"(9.5mm) lead length at 5 lbs. (2.3kg) tension
• Pb free product are available : 99% Sn above can meet RoHS environment
substance directive request
MECHANICAL DATA
Case: Reliable low cost construction utilizing
molded plastic technique
Terminals: Leads solderable per MIL-STD-750,
Method 2026
Mounting position: Any
Mounting torque: 20 in. lb. Max.
Weight: 7.056g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25° C ambient temperature unless otherwise specified. Resistive or inductive load, 60Hz.
For Capacitive load derate current by 20%.
KBJ
2000
50
35
50
KBJ
2001
100
70
100
KBJ
2002
200
140
200
KBJ
2004
400
280
400
KBJ
2006
600
420
600
KBJ
2008
800
560
800
KBJ
2010
1000
700
1000
PARAMETER
SYMBOL
UNITS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current for Resistive
Load at Tc =55
Non-repetitive Peak Forward Surge Current, Rated
Load
Maximum Forward Voltage per Bridge
Element at 20A Specified Current
Maximum Reverse Leakage Current at Rated
@ TA=25
Typical Thermal Resistance(Fig 3 )
Operating Junction and Storage Temperature
Range
V
RRM
V
RMS
V
DC
V
V
V
I
AV
20
A
I
FSM
300
A
V
F
1.1
V
I
R
10
1.2
-50 TO +15 0
uA
R
QJC
T
J
, T
STG
/W
NOTES : Device mounted on 100mm *100mm * 1.6mm Cu Plate Heatsink.
STAD-JAN.28.2005
PAGE . 1
25
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
30
I
O
, AVERAGE RECTIFIED CURRENT (A)
100
20
Tj = 25
°
C
10
15
10
1.0
5
Resistive or
Inductive load
Pulse width = 300
µ
s
0
0
25
50
75
100
125
150
0.1
0.0
0.2
0.6
1.0
1.4
1.8
T , TEMPERATURE (
°
C)
Fig. 1 Forward Current Derating Curve
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Fwd Characteristics,
per element
I
FSM
, PEAK FORWARD SURGE CURRENT (A)
Single half-sine-wave
(JEDEC method)
1000
350
T
j
= 25
°
C
f = 1.0MHz
250
C
j
, JUNCTION CAPACITANCE (pF)
100
T
j
= 25
°
C
100
150
50
0
1
10
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Maximum Non-Repetitive Surge Current
10
1
10
V
R
, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
100
STAD-JAN.28.2005
PAGE . 2
查看更多>