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KBJ6005G

Bridge Rectifier Diode, 1 Phase, 2.8A, 50V V(RRM), Silicon, PLASTIC PACKAGE-4

器件类别:分立半导体    二极管   

厂商名称:台湾光宝(LITEON)

厂商官网:http://optoelectronics.liteon.com/en-global/Home/index

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
包装说明
R-PSFM-T4
针数
4
Reach Compliance Code
compliant
ECCN代码
EAR99
其他特性
UL RECOGNIZED
最小击穿电压
50 V
外壳连接
ISOLATED
配置
BRIDGE, 4 ELEMENTS
二极管元件材料
SILICON
二极管类型
BRIDGE RECTIFIER DIODE
最大正向电压 (VF)
1 V
JESD-30 代码
R-PSFM-T4
最大非重复峰值正向电流
170 A
元件数量
4
相数
1
端子数量
4
最高工作温度
150 °C
最低工作温度
-55 °C
最大输出电流
2.8 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
峰值回流温度(摄氏度)
255
认证状态
Not Qualified
最大重复峰值反向电压
50 V
表面贴装
NO
端子形式
THROUGH-HOLE
端子位置
SINGLE
处于峰值回流温度下的最长时间
NOT SPECIFIED
Base Number Matches
1
文档预览
LITE-ON
SEMICONDUCTOR
KBJ6005G thru KBJ610G
REVERSE VOLTAGE
- 50
to
1000
Volts
FORWARD CURRENT
- 6.0
Amperes
GLASS PASSIVATED BRIDGE RECTIFIERS
FEATURES
Rating to 1000V PRV
Ideal for printed circuit board
Reliable low cost construction utilizing molded plastic
technique
The plastic material has UL flammability classification
94V-0
UL recognized file # E95060
KBJ
KBJ
DIM.
MIN.
MAX.
24.80
A
25.20
B
14.70
15.30
4.10
C
3.90
4.40
4.80
D
E
3.40
3.80
F
3.10
3.40
3.30
3.70
G
1.10
0.90
H
I
1.50
1.90
17.80
J
17.2
K
7.30
7.70
L
2.50
2.90
0.60
0.80
M
9.30
9.70
N
O
3.0 x 45
P
3.10
3.40
All Dimensions in millimeter
P
A
O
B
+
D
E
F
N
C
~ ~
I
-
G
MECHANICAL DATA
Polarity : Symbols molded on body
Weight : 0.16 ounces, 4.6 grams
Mounting position : Any
H
J
L
M
K
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
KBJ
6005G
50
35
50
KBJ
601G
100
70
100
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward (with heatsink
Note 2
)
Rectified Current
@T
C
=110 C
(without heatsink)
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load (JEDEC METHOD)
Maximum forward Voltage at 3.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
I t Rating for fusing (t < 8.3ms)
Typical Junction
Capacitance per element (Note 1)
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Storage Temperature Range
2
SYMBOL
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
I t
C
J
R
0JC
2
KBJ
602G
200
140
200
KBJ
604G
400
280
400
6.0
2.8
170
1.0
5.0
500
120
80
1.5
-55 to +150
-55 to +150
KBJ
606G
600
420
600
KBJ
608G
800
560
800
KBJ
610G
1000
700
1000
UNIT
V
V
V
A
A
V
uA
AS
pF
C/W
2
@T
J
=25 C
@T
J
=125 C
T
J
T
STG
C
C
REV. 2, 01-Dec-2000, KBDF04
NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Unit Mounted on 75mm x 75mm x 1.6mm Cu Plate Heatsink.
RATING AND CHARACTERISTIC CURVES
KBJ6005G thru KBJ610G
AVERAGE FORWARD CURRENT
AMPERES
6.0
WITH HEATSINK
PEAK FORWARD SURGE CURRENT,
AMPERES
FIG.1 - FORWARD CURRENT DERATING CURVE
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
180
160
140
120
100
80
60
40
20
0
1
2
5
10
Single Half-Sine-Wave
(JEDEC METHOD)
5.0
4.0
3.0
WITHOUT HEATSINK
2.0
1.0
0.0
SINGLE PHASE HALF WAVE 60Hz
RESISTIVE OR INDUCTIVE LOAD
20
40
60
80
100
120
140
20
50
100
CASE TEMPERATURE , C
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL JUNCTION CAPACITANCE
1000
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
10
INSTANTANEOUS FORWARD CURRENT ,(A)
T
J
= 150 C
CAPACITANCE , (pF)
100
1.0
T
J
= 25 C
10
0.1
T
J
= 25 C, f = 1MHz
PULSE WIDTH 300us
1.0
0.1
1.0
4.0
10.0
100
.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
REVERSE VOLTAGE , VOLTS
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
1000
T
J
= 150 C
INSTANTANEOUS
REVERSE CURRENT ,(uA)
100
T
J
= 125 C
T
J
= 100 C
10
1.0
0.1
T
J
= 25 C
.01
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
REV. 2, 01-Dec-2000, KBDF04
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