KIA
SEMICONDUCTORS
13A，500V
N-CHANNEL MOSFET
13N50H
1.
Description
The KIA13N50H N-Channel enhancement mode silicon gate power MOSFET is designed for high
voltage, high speed power switching applications such as high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts based on half bridge topology
2.
Features
n
n
n
n
n
R
DS(on)
=0.4Ω @ V
GS
=10V
Low gate charge ( typical 45nC)
Fast switching capability
Avalanche energy specified
Improved dv/dt capability
3.
Pin configuration
Pin
1
2
3
4
Function
Gate
Drain
Source
Drain
1 of 5
Rev 1.1 JAN 2014
KIA
SEMICONDUCTORS
13A，500V
N-CHANNEL MOSFET
13N50H
4.
Absolute maximum ratings
Parameter
Drain-source voltage
Gate-source voltage
Drain current continuous
T
C
=25ºC
T
C
=100ºC
Symbol
V
DSS
V
GSS
I
D
Drain current pulsed (note1)
I
DP
Repetitive (note1)
E
AR
Avalanche energy
Single pulse (note2)
E
AS
Peak diode recovery dv/dt (note 3)
dv/dt
T
C
=25ºC
Total power dissipation
P
D
derate above 25ºC
Junction temperature
T
J
Storage temperature
T
STG
*Drain current limited by maximum junction temperature.
(T
C
= 25 ºC , unless otherwise notes)
Ratings
Units
TO220 TO220F TO263
V
500
V
+30
13.0
13.0*
13.0
A
8.0
8.0*
8.0
A
A
52.0
52.0*
52.0
mJ
19.5
mJ
860
V/ns
4.5
W
48
195
195
0.39
1.56
1.56
W/ºC
+150
ºC
-55~+150
ºC
5.
Thermal characteristics
Ratings
TO220F
62.5
-
2.58
Parameter
Thermal resistance, junction-ambient
Thermal resistance, case-to-sink typ.
Thermal resistance, Junction-case
Symbol
R
thJA
R
thJS
R
thJC
TO220
TO263
0.5
0.64
Units
ºC/W
0.5
0.64
2 of 5
Rev 1.1 JAN 2014
KIA
SEMICONDUCTORS
13A，500V
N-CHANNEL MOSFET
13N50H
6.
Electrical characteristics
Parameter
Off characteristics
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
Symbol
BV
DSS
I
DSS
(T
J
=25°C,unless otherwise notes)
Conditions
Min Typ
Max Units
V
GS
=0V,I
D
=250μA
V
DS
=500V ,V
GS
=0V
V
DS
=400V ,T
C
=125 ºC
V
GS
=30V,V
DS
=0V
V
GS
=-30V,V
DS
=0V
I
D
=250μA
V
DS
=V
GS
, I
D
=250μA
V
GS
=10V,I
D
=6.5A
V
DS
=25V,V
GS
=0V,
f=1MHz
500
-
-
-
-
-
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.5
-
0.4
1600
200
20
25
100
130
100
45
8
19
-
-
-
410
4.5
-
1
10
100
-100
-
4.0
0.48
-
-
-
-
-
-
-
-
-
-
1.4
13.0
52.0
-
-
V
μA
μA
nA
nA
V/°C
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
A
ns
μC
Forward
I
GSS
Reverse
Breakdown voltage temperature coefficient
△BV
DSS
/△T
J
On characteristics
Gate threshold voltage
V
GS(th)
Static drain-source on-resistance
R
DS(on)
Dynamic characteristics
Input capacitance
C
iss
Output capacitance
C
oss
Reverse transfer capacitance
C
rss
Switching characteristics
Turn-on delay time
t
d(on)
Rise time
t
r
Turn-off delay time
t
d(off)
Fall time
t
f
Total gate charge
Q
g
Gate-source charge
Q
gs
Gate-drain charge
Q
gd
Drain-source diode characteristics
Drain-source diode forward voltage
V
SD
Continuous drain-source current
I
SD
Pulsed drain-source current
I
SM
Reverse recovery time
t
rr
Reverse recovery charge
Q
rr
V
DD
=250V,I
D
=13.0A,
R
G
=25Ω (note4,5)
V
DS
=400V,I
D
=13.0A ,
V
GS
=10V (note4,5)
V
GS
=0V,I
D
=13.0A
I
SD
=13.0A
dl
SD
/dt=100A/μs
(note4)
Note:1 Repetitive rating: pulse width limited by maximum junction temperature
2. L=6mH, I
AS
=13.0A,V
DD
=50V,R
G
=25Ω,staring T
J
=25ºC
3. I
SD
<13.0A,di/dt<200A/μs, V
DD
<BV
DSS
, staring T
J
=25 ºC
4. Pulse test: pulse width<300μs, duty cycle<2%
5. Essentially independent of operating temperature
3 of 5
Rev 1.1 JAN 2014
KIA
SEMICONDUCTORS
13A，500V
N-CHANNEL MOSFET
13N50H
7.
Typical Characteristics
4 of 5
Rev 1.1 JAN 2014
KIA
SEMICONDUCTORS
13A，500V
N-CHANNEL MOSFET
13N50H
5 of 5
Rev 1.1 JAN 2014
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