KIA
SEMICONDUCTORS
MOSFET
TRANSISTORS
2300
1. Features
V
DS
=20V,R
DS(ON)
=30mΩ@ V
GS
=10V,I
D
=6.0A
V
DS
=20V,R
DS(ON)
=40mΩ@ V
GS
=4.5V,I
D
=3.0A
V
DS
=20V,R
DS(ON)
=55mΩ@ V
GS
=2.5V,I
D
=2.0A
2. Pin information
D
Pin
Function
Gate
Source
Drain
G
1
2
3
S
3. Maximum ratings
(Ta=25°C)
Characteristic
Drain-source voltage
Gate-source voltage
Drain current-continuous*T
J
=125℃ pulsed
Peak drain current
Power dissipation*
Thermal resistance,junction-ambient
Operating junction and storage temperature range
*Surface Mounted on FR 4 Board,t≤10 sec.
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
T
j
,T
stg
Rating
20
±10
6.0
20
1.25
100
-55½150
Unit
V
V
A
A
W
°C /W
°C
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KIA
SEMICONDUCTORS
MOSFET
TRANSISTORS
2300
6. Electrical characteristics
（
unless otherwise noted，Ta=25°C）
Characteristic
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage
Gate threshold voltage*
Drain-source on-state resistance*
On-state drain current*
Forward transconductance*
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Drain-source diode forward
current*
Diode forward voltage
Symbol
V
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
I
D(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
V
SD
V
GS
=0V, I
S
=1.25A
V
DD
=10V,I
D
=1A,R
G
=6Ω,
R
L
=10Ω
V
DS
=10V, I
D
=3.5A,
V
GS
=4.5V
-
-
-
-
-
-
V
DS
=15V, V
GS
=0V,f=1MHz
Test condition
V
GS
=0V, I
D
=250µA
V
DS
=16V, V
GS
=0V
V
GS
=±10V, V
GS
=0V
V
DS
= V
GS
,I
D
=250µA
V
GS
=10V, I
D
=6.0A
V
GS
=2.5V, I
D
=3.0A
V
GS
=1.8V, I
D
=2.0A
V
DS
=5V,V
GS
=4.5V
V
DS
=15V
DS(on)
,I
D
=5A
5
30
-
-
-
-
Min
20
-
-
0.5
Typ
-
-
-
0.78
28
38
52
-
-
888
144
115
16.8
2.5
5.4
31.8
14.5
50.3
31.9
-
0.825
Max
-
1.0
±100
1.0
30
40
55
-
-
-
-
-
-
-
-
-
-
-
-
1.25
1.3
A
V
ns
nC
pF
A
S
mΩ
Unit
V
µA
nA
V
2 of 5
KIA
SEMICONDUCTORS
MOSFET
TRANSISTORS
2300
7. Package outline
3 of 5
KIA
SEMICONDUCTORS
MOSFET
TRANSISTORS
2300
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KIA
SEMICONDUCTORS
MOSFET
TRANSISTORS
2300
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