KIA
SEMICONDUCTORS
160A，60V
N-CHANNEL MOSFET
2806A
1.
Features
n
n
n
n
R
DS(on)
=3.5mΩ（typ.）@ V
GS
=10V
100% avalanche tested
Reliable and rugged
Lead free and green device available（RoHS Compliant）
2.
Applications
n
n
n
Switching application
Power management for inverter systems
UPS
3.Symbol
Pin
1
2
3
4
Function
Gate
Drain
Source
Drain
1 of 6
Rev 1.5 Sep. 2017
KIA
SEMICONDUCTORS
160A，60V
N-CHANNEL MOSFET
2806A
4.
Absolute maximum ratings
(T
A
=25°C,unless otherwise noted)
Rating
Units
TO-220/263 TO-247/3P
60
+25
175
-55 to175
160
160
105
580
400
185
92.5
277
138.5
V
V
ºC
ºC
A
A
A
A
mJ
W
Parameter
Drain-source voltage
Gate-source voltage
Maximum junction temperature
Storage temperature range
Diode continuous forward current
Continuous drain current
Pulse drain current*
Avalanche energy,single pulsed
Maximum power dissipation
T
C
=25ºC
T
C
=25ºC
T
C
=100ºC
T
C
=25ºC
L=0.5mH
T
C
=25 ºC
T
C
=100ºC
Symbol
V
DSS
V
GSS
T
J
T
STG
I
S
I
D3
I
DM4
E
AS5
P
D
5.
Thermal characteristics
Parameter
Thermal resistance,Junction-ambient
Thermal resistance,Junction-case
Symbol
R
θJA
R
θJC
Rating
62.5
0.81
Unit
ºC/W
ºC/W
2 of 6
Rev 1.5 Sep.2017
KIA
SEMICONDUCTORS
160A，60V
N-CHANNEL MOSFET
2806A
(T
A
=25°C,unless otherwise noted)
Test Conditions
Min
Typ
Max
Units
V
GS
=0V,I
DS
=250μA
V
DS
=48V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
D
=250μA
V
GS
=+25V, V
DS
=0V
V
GS
=10V,I
D
=60A
V
DS
=0V, V
GS
=0V,f=1MHz
I
SD
=60A, V
GS
=0V
I
F
=60A ,V
DD
=50V
dl
SD
/dt=100A/μs
V
DS
=25V,V
GS
=0V,
f=1MHz
60
-
-
2.0
-
-
-
-
-
-
-
-
-
-
V
DD
=30V, I
DS
=60A,
R
G
=25Ω,V
GS
=10V
-
-
-
V
DS
=48V, V
GS
=10V
I
DS
=60A
-
-
-
-
-
-
3.0
-
3.5
0.7
0.8
30
50
4376
857
334
28
18
42
54
130
24
47
-
1
10
4.0
+100
4.5
-
1.2
-
-
-
-
-
-
-
-
-
-
--
--
nC
ns
pF
V
μA
V
nA
mΩ
Ω
V
nS
nC
6.
Electrical characteristics
Parameter
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Gate leakage current
Drain-source on-state resistance
Gate resistance
Diode forward voltage
Reverse recovery time
2
Reverse recovery charge
2
Input capacitance
2
Output capacitance
2
Reverse transfer capacitance
2
Turn-on delay time
2
Rise time
2
Turn-off delay time
Fall time
2
Total gate charge
2
Gate-source charge
2
Gate-drain charge
2
2
Symbol
BV
DSS
I
DSS
V
GS(th)
I
GSS
R
DS(on)1
R
g
V
SD1
t
rr
Q
rr
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Note:1:Pulse test;pulse width<300us duty cycle<2%.
2.Guaranteed by design,not subject to production testing.
3.Package limitation current is 75A,Calculated continuous current based on maximum allowable
junction temperature.
4:Repetitive rating,pulse width limited by junction temperature.
5:Starting TJ=25ºC,L=0.5mH.
3 of 6
Rev 1.5 Sep. 2017
KIA
SEMICONDUCTORS
160A，60V
N-CHANNEL MOSFET
2806A
7.Test
circuits and waveforms
4 of 6
Rev 1.5 Sep. 2017
KIA
SEMICONDUCTORS
160A，60V
N-CHANNEL MOSFET
2806A
5 of 6
Rev 1.5 Sep. 2017
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