KIA
SEMICONDUCTORS
150A，80V
N-CHANNEL MOSFET
2808A
1.
Features
n
n
n
n
R
DS(on)
=4.0mΩ（typ.）@ V
GS
=10V
100% avalanche tested
Reliable and rugged
Lead free and green device available（RoHS Compliant）
2.
Applications
n
n
Switching application
Power management for inverter systems
3.Symbol
Pin
1
2
3
4
Function
Gate
Drain
Source
Drain
1 of 6
Rev 1.2 Nov. 2016
KIA
SEMICONDUCTORS
150A，80V
N-CHANNEL MOSFET
2808A
4.
Absolute maximum ratings
(T
A
=25°C,unless otherwise noted)
Rating
Units
Parameter
Symbol
TO-220/
TO-263
Drain-source voltage
Gate-source voltage
Maximum junction temperature
Storage temperature range
Diode continuous forward current
Continuous drain current
Pulse drain current*
Avalanche energy,single pulsed
Maximum power dissipation
T
C
=25ºC
T
C
=25ºC
T
C
=100ºC
T
C
=25ºC
L=0.5mH
T
C
=25 ºC
T
C
=100ºC
V
DSS
V
GSS
T
J
T
STG
I
S
I
D
I
DM
E
AS
P
D
178
89
80
+25
175
-55 to175
150
150
114
660**
1.1***
214
107
TO-247/
TO-3P
V
V
ºC
ºC
A
A
A
A
J
W
W
Note:* Repetitive rating;pulse width limited by junction temperature
** Drain current is limited by junction temperature
***VD=64V
5.
Thermal characteristics
Parameter
Thermal resistance,Junction-ambient
Thermal resistance,Junction-case
Symbol
R
θJA
R
θJC
Rating
62.5
0.7
Unit
ºC/W
ºC/W
2 of 6
Rev 1.3 Nov. 2016
KIA
SEMICONDUCTORS
150A，80V
N-CHANNEL MOSFET
2808A
6.
Electrical characteristics
Parameter
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Gate leakage current
Drain-source on-state resistance
Gate resistance
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
BV
DSS
I
DSS
V
GS(th)
I
GSS
R
DS(on)*
R
g
V
SD*
t
rr
Q
rr
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
DS
=64V, V
GS
=10V
I
DS
=85A
V
DD
=40V, I
DS
=85A,
R
G
=6Ω,V
GS
=10V
(T
A
=25°C,unless otherwise noted)
Test Conditions
Min
Typ
Max
Units
V
GS
=0V,I
DS
=250μA
V
DS
=80V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
D
=250μA
V
GS
=+25V, V
DS
=0V
V
GS
=10V,I
D
=85A
V
DS
=0V, V
GS
=0V,f=1MHz
I
SD
=85A, V
GS
=0V
I
SD
=85A ,
dl
SD
/dt=100A/μs
V
DS
=25V,V
GS
=0V,
f=1MHz
80
-
-
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
3.0
-
4.0
1.8
0.8
30
52
6109
995
530
28
18
42
54
152
25
53
-
1
10
4.0
+100
4.5
-
1.2
-
-
-
-
-
-
-
-
-
-
--
--
nC
ns
pF
V
μA
V
nA
mΩ
Ω
V
nS
nC
Note*:Pulse test;pulse width<300us duty cycle<2%.
3 of 6
Rev 1.3 Nov. 2016
KIA
SEMICONDUCTORS
150A，80V
N-CHANNEL MOSFET
2808A
7.Test
circuits and waveforms
4 of 6
Rev 1.3 Nov. 2016
KIA
SEMICONDUCTORS
150A，80V
N-CHANNEL MOSFET
2808A
5 of 6
Rev 1.3 Nov. 2016
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