KIA
SEMICONDUCTORS
9.0A，200V
N-CHANNEL MOSFET
4820N
1.Applications
n
n
CRT, TV/Monitor
Other Applications
2.
Features
n
n
n
n
R
DS(on)
= 260mΩ @V
GS
= 10 V
Proprietary new planar technology
Low gate charge minimize switching loss
Fast recovery body diode
3.
Pin configuration
Pin
1
2
3
4
Function
Gate
Drain
Source
Drain
1 of 6
Rev 1.1 May 2016
KIA
SEMICONDUCTORS
9.0A，200V
N-CHANNEL MOSFET
4820N
4.
Absolute maximum ratings
(T
C
=25
ºC
, unless otherwise specified)
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain currenet
Pulsed drain current at V
GS
=10V
Single pulse Avalanche energy
Power dissipation
Symbol
V
DSS
V
GSS
I
D
I
DM
E
AS
P
D
T
L
T
J
&T
STG
Ratings
200
±20
9.0
36
300
83
0.59
300
-55~+150
Units
V
V
A
A
mJ
W
W/°C
°C
°C
Derating factor above 25°C
Soldering temperature distance of 1.6mm from case
for 10seconds
Operating and storage temperature range
Caution: Stresses greater than those listed in the
“
Absolute maximum ratings” may cause permanent
damage to the device.
5.
Thermal characteristics
Rating
TO-220
TO-252
1.5
1.5
62
75
Parameter
Thermal resistance,Junction-to-case
Thermal resistance,Junction-to-ambient
Symbol
θ
JC
Unit
ºC/W
ºC/W
θ
JA
2 of 6
Rev 1.1 May 2016
KIA
SEMICONDUCTORS
9.0A，200V
N-CHANNEL MOSFET
4820N
6.
Electrical characteristics
Parameter
Off Characteristics
Drain-source breakdown voltage
Drain-to-source leakage current
Gate-to-source leakage current
On characteristics
Gate threshold voltage
Static drain-source on-resistance
Forward transconductance
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain (Miller)charge
Resistive switching characteristics
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain body diode characteristics
Diode forward voltage
Continuous source current
2
Pulsed source current
2
Reverse recovery time
Reverse recovery charge
Note: 1.T
J
=25°C to 150°C
2. Pulse width <380μs; duty cycle <2%.
3.KIA finished product specifications please customer before placing order, should obtain the latest
version of the finished product specifications.
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
gfs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
(T
J
=25°C,unless otherwise notes)
Conditions
Min
Typ Max Unit
V
GS
=0V,I
D
=250μA
V
DS
=200V ,V
GS
=0V
V
DS
=160V ,V
GS
=0V,T
J
=125
ºC
V
GS
=20V,V
DS
=0V
V
GS
=-20V,V
DS
=0V
V
DS
=V
GS
, I
D
=250μA
V
GS
=10V,I
D
=5.4A
V
DS
=25V, I
D
=9A
200
-
-
-
-
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
260
9.5
670
78
30
16
3
6
6.8
5.8
20
5
-
-
-
155
380
-
1
100
100
-100
4.0
400
-
-
-
-
-
-
-
-
-
-
-
1.5
9
36
-
-
V
μA
μA
nA
nA
V
mΩ
S
V
DS
=25V,V
GS
=0V,f=1.0MHz
pF
V
DD
=150V,I
D
=9A,V
GS
=0V-10V,
nC
T
d(ON)
t
rise
V
DD
=100V,I
D
=9A,V
GS
=10V,
R
G
=12Ω
T
d(OFF)
t
fall
T
J
=25°C,unless otherwise notes
V
SD
V
GS
=0V,I
S
=9A
I
SD
Integral PN-diode in MOSFET
I
SM
t
rr
I
F
=9A,di
F
/dt=100A/μs
Q
rr
nS
V
A
A
ns
nC
3 of 6
Rev 1.1 May 2016
KIA
SEMICONDUCTORS
9.0A，200V
N-CHANNEL MOSFET
4820N
7.Typical
characteristics
4 of 6
Rev 1.1 May 2016
KIA
SEMICONDUCTORS
9.0A，200V
N-CHANNEL MOSFET
4820N
5 of 6
Rev 1.1 May 2016
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