KIA
SEMICONDUCTORS
9A 900V
N-CHANNEL MOSFET
9N90H
1.Description
These N-Channel enhancement mode power field effect transistors are produced using
Fairchild’s proprietary, planar stripe, DMOS technology.This advanced technology has been especially
tailored to minimize on-state resistance, provide superior switching performance, and withstand high
energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient
switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge
to pology.
2.
Features
n
n
n
n
n
n
n
9A, 900V, R
DS(on)
=1.12Ω @ V
GS
=10 V
Low gate charge ( typical 70 nC)
Low Crss ( typical 14pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS compliant
3.
Pin configuration
Pin
1
2
3
1 of 7
Function
Gate
Drain
Source
Rev 1.1 JAN 2014
KIA
SEMICONDUCTORS
9A 900V
N-CHANNEL MOSFET
9N90H
4.
Absolute maximum ratings
(T
C
= 25
ºC
, unless otherwise specified)
Symbol
Units
Ratings
V
DSS
T
C
=25°C
T
C
=100°C
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
900
9.0
5.7
36
±
30
900
9.0
28
4.0
280
2.22
-55 to +150
300
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Parameter
Drain-source voltage
Drain current
Drain current (note1)
Gate-source Voltage
Single pulsed avalanche energy (note2)
Avalanche current (note1)
Repetitive avalanche energy (note1)
Peak diode recovery dv/dt (note 3)
T
C
=25°C
Power dissipation
Derate above 25°C
Operating and storage temperature range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
5.
Thermal characteristics
Parameter
Thermal resistance, junction-to-case
Thermal resistance, case-to-sink
Thermal resistance, junction-to-ambient
Symbol
R
θJC
R
θCS
R
θJA
Typ
-
0.24
-
Max
0.45
-
40
Units
°C/W
°C/W
°C/W
2 of 7
Rev 1.1 JAN 2014
KIA
SEMICONDUCTORS
9A 900V
N-CHANNEL MOSFET
9N90H
6.
Electrical characteristics
(T
C
=25°C,unless otherwise notes)
Parameter
Off characteristics
Drain-source breakdown voltage
Zero gate voltage drain current
Forward
Gate-body leakage
current
Reverse
Breakdown voltage temperature
coefficient
On characteristics
Gate threshold voltage
Static drain-source on-resistance
Forward transconductance
Symbol
BV
DSS
I
DSS
I
GSS
△BV
DSS
/△T
J
V
GS(th)
R
DS(on)
g
FS
Test Conditions
V
GS
=0V,I
D
=250μA
V
DS
=900V,V
GS
=0V
V
DS
=720V,T
C
=125°C
V
GS
=30V,V
DS
=0V
V
GS
=-30V,V
DS
=0V
I
D
=250μA
Referenced to 25°C
V
DS
=V
GS
, I
D
=250μA
V
GS
=10V,I
D
=4.5A
V
DS
=40V,I
D
=4.5A
(note4)
Min
900
-
-
-
-
-
3.0
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
0.9
-
1.12
9.0
2780
228
28
55
130
110
80
70
13.5
27
Max
-
10
100
100
-100
-
5.0
1.4
-
Units
V
μA
μA
nA
nA
V/°C
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Dynamic characteristics
Input capacitance
C
ISS
V
DS
=25V,V
GS
=0V,
Output capacitance
C
OSS
f=1MH
Z
Reverse transfer capacitance
C
RSS
Switching characteristics
Turn-on delay time
t
D(ON)
Rise time
t
R
V
DD
=450V,I
D
=9.0A,
R
G
=25Ω (note4, 5)
Turn-off delay time
t
D(OFF)
Fall time
t
F
Total gate charge
Q
G
V
DS
=720V, I
D
=9.0A,
Gate-source charge
Q
GS
V
GS
=10V (note4, 5)
Gate-drain charge
Q
GD
Drain-source diode characteristics and maximum ratings
Maximum continuous drain-source
I
S
diode forward current
Maximum pulsed drain-source diode
I
SM
forward current
Drain-source diode forward voltage
Reverse recovery time
Reverse recovery charge
V
SD
t
RR
Q
RR
V
GS
=0V,I
S
=9.0A
V
GS
=0V,I
S
=9.0A,
dI
F
/dt=100A/μs
(note 4)
-
-
-
-
-
-
-
-
-
-
850
10
9.0
36.0
1.4
-
-
A
A
V
ns
μC
Note：1. Repetitive rating : pulse width limited by maximum junction temperature
2. L=21mH, I
AS
= 9.0A, V
DD
=50V, R
G
=25Ω, starting T
J
=25°C
3. I
SD
≤9.0A,
di/dt≤200A/μs, V
DD
≤BV
DSS
, Starting T
J
=25°C
4. Pulse test : pulse width≤300μs, duty cycle≤2%
5. Essentially independent of operating temperature
3 of 7
Rev 1.1 JAN 2014
KIA
SEMICONDUCTORS
9A 900V
N-CHANNEL MOSFET
9N90H
7.Test
circuits and waveforms
4 of 7
Rev 1.1 JAN 2014
KIA
SEMICONDUCTORS
900V
N-CHANNEL MOSFET
9N90H
5 of 7
Rev 1.1 JAN 2014
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