KIA
SEMICONDUCTORS
80A，80V
N-CHANNEL MOSFET
KNX3308B
1.
Features
n
n
n
n
R
DS(ON)
=7.2mΩ(typ)@V
GS
=10V
Lead free and green device available
Low Rds-on to minimize conductive loss
High avalanche current
2.
Applications
n
n
Power supply
DC-DC converters
3.
Pin configuration
Pin
1
2
3
Function
Gate
Drain
Source
1 of 6
Rev 1.0 Aug. 2018
KIA
SEMICONDUCTORS
80A，80V
N-CHANNEL MOSFET
KNX3308B
4.
Ordering Information
Part Number
KNB3308B
Package
TO-263
Brand
KIA
5.
Absolute maximum ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Pulse drain current
Avalanche current
Avalanche energy
Symbol
V
DSS
V
GSS
T
C
=25
ºC
T
C
=100
ºC
T
C
=25
ºC
I
D3
I
DP4
I
AS5
E
AS5
Maximum
80
+25
80
65
320
40
440
Units
V
V
A
A
A
A
mJ
T
C
=25
ºC
Maximum power dissipation
T
C
=100
ºC
P
D
210
105
T
J
,T
STG
-55½175
W
W
ºC
Junction & storage temperature range
6.
Thermal characteristics
Parameter
Thermal resistance-junction to case
Thermal resistance-junction to ambient
Symbol
R
θjc
R
θja
Typical
0.72
62.5
Units
ºC/W
2 of 6
Rev 1.0 Aug. 2018
KIA
SEMICONDUCTORS
80A，80V
N-CHANNEL MOSFET
KNX3308B
7.
Electrical characteristics
Parameter
Static characteristics
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Gate leakage current
Drain-source on-state resistance
Diode characteristics
Diode forward voltage
Diode continuous forward current
Reverse recovery time
Reverse recovery charge
Dynamic characteristics
2
Gate resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Gate charge characteristics
2
Total gate charge
Gate-source charge
Gate-drain charge
Q
g
Q
gs
Q
gd
V
DS
=37.5V, V
GS
=10V,
I
D
=40A,
-
-
-
75
10
38
-
-
-
nC
R
G
C
iss
C
oss
C
rss
t
d(ON)
t
r
t
d(OFF)
t
f
V
DD
=37.5V,I
D
=40A,
V
GS
=10V,R
G
=6.8Ω
V
GS
=0V, V
DS
=25V,
F=1.0MHz
V
GS
=0V, V
DS
=0V,F=1MHz
-
-
-
-
-
-
-
1.6
3650
420
180
21
64
66
40
-
-
-
-
-
-
-
-
nS
pF
Ω
V
SD1
I
S3
t
rr
Q
rr
I
F
=40A,dl/dt=100A/μs
I
SD
=40A,V
GS
=0V
-
-
-
-
0.8
-
60
122
1.5
80
-
-
V
A
nS
nC
BV
DSS
I
DSS
V
GS(th)
I
GSS
R
DS(on)1
V
GS
=0V,I
D
=250μA
V
DS
=64V,V
GS
=0V
T
J
=125
ºC
V
DS
=V
GS
, I
D
=250μA
V
GS
=+25V,V
DS
=0V
V
GS
=10V,I
D
=40A
80
-
-
2
-
-
-
-
-
3
-
7.2
-
1
100
4
+100
9
V
μA
V
nA
mΩ
Symbol
(T
A
=25°C,unless otherwise noted)
Conditions
Min
Typ
Max Unit
Note:1. Pulse test; pulse width
≤300μs,
duty cycle
≤2%.
2.Guaranteed by design,not subject to production testing.
3.Package limitation current is 50A. Calculated continuous current based on maximum allowable
junction temperature.
4.Repetitive rating, pulse width limited by max junction temperature.
5.Starting T
J
=25
ºC,
L=0.5mH, V
DD
=50V,I
AS
=42A.
3 of 6
Rev 1.0 Aug. 2018
KIA
SEMICONDUCTORS
80A，80V
N-CHANNEL MOSFET
KNX3308B
8.Test
circuits and waveforms
4 of 6
Rev 1.0 Aug. 2018
KIA
SEMICONDUCTORS
80A，80V
N-CHANNEL MOSFET
KNX3308B
5 of 6
Rev 1.0 Aug. 2018
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