KIA
SEMICONDUCTORS
2.8A，1500V
N-CHANNEL MOSFET
KNX42150A
1.Product
Features
n
n
n
High speed switching
R
DS(ON),typ.
=6.5Ω@V
GS
=10V
Full isolated TO-3PF plastic package
2.Applications
n
Switching applications
3.
Pin configuration
TO-3PF
Pin
1
2
3
Function
Gate
Drain
Source
1 of 5
Rev 1.0 Aug. 2018
KIA
SEMICONDUCTORS
2.8A，1500V
N-CHANNEL MOSFET
KNX42150A
4.
Ordering Information
Part Number
KNL42150A
Package
TO-3PF
Brand
KIA
5.
Absolute maximum ratings
(T
C
= 25
ºC
, unless otherwise specified)
Symbol
V
DSS
V
GSS
I
D
I
DM
E
AS
P
D
T
Jmax
T
STG
Parameter
Drain-to-Source Voltage T
J
=25
ºC
Gate-to-Source Voltage
Continuous Drain Current @ Tc=25
ºC
Continuous Drain Current@ Tc=100
ºC
Pulsed Drain Current at V
GS
=10V Limited by T
Jmax
Single Pulse Avalanche Energy(V
DD
=50V)
Maximum Power Dissipation
Max. Junction Temperature
Storage Temperature Range
Ratings
1500
±30
2.8
1.6
10
450
63
150
-55 to 150
Unit
V
A
mJ
W
ºC
6.
Thermal characteristics
Symbol
R
θJC
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Ratings
2
50
Unit
ºC
/W
2 of 5
Rev 1.0 Aug. 2018
KIA
SEMICONDUCTORS
2.8A，1500V
N-CHANNEL MOSFET
KNX42150A
7.
Electrical characteristics
(TJ=25°C,unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
I
DSS
I
GSS
R
gint
V
GS(TH)
C
iss
C
rss
C
oss
Q
g
Q
gs
Q
gd
t
d(ON)
t
rise
t
d(OFF)
t
fall
I
SD
V
SD
t
rr
Q
rr
Parameter
Drain-to-Source Breakdown Voltage
Drain-to-Source ON Resistance
Drain-to-Source Leakage Current
Gate-to-Source Leakage Current
Integrated Gate Resistor
Gate Threshold Voltage
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (Miller) Charge
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Continuous Source Current
Forward Voltage
Reverse recovery time
Reverse recovery charge
I
S
=2.5A, V
GS
=0V
V
GS
=0V ,I
F
=2.5A,
diF/dt=-100A/μs
V
DS
=V
GS
,I
D
=250uA
V
GS
=0V,
V
DS
=25V,
f=1.0MHZ
V
DD
=1200V,
I
D
=2.5A,
V
GS
=10V
V
DD
=750V,
I
D
=1.25A,
R
G
=4.7Ω
V
GS
= 10V
(Resistive
Load)
Test Conditions
V
GS
=0V, I
D
=1mA
V
GS
=0V, I
D
=1.3A
V
DS
=1500V, V
GS
=0V
V
GS
=±20V, V
DS
=0V
--
-100
--
3
--
--
--
--
--
--
--
T
J
=25ºC
--
--
--
--
--
--
--
Min.
1500
Typ.
--
6.5
--
--
2
4
1500
11
88
35
6
20
30
65
45
60
--
-
410
2280
Max.
--
9
10
100
--
5
--
--
--
--
--
--
--
--
--
--
2.8
1.6
--
--
A
V
ns
nC
nS
nC
pF
Unit
V
Ω
uA
nA
Ω
V
3 of 5
Rev 1.0 Aug. 2018
KIA
SEMICONDUCTORS
2.8A，1500V
N-CHANNEL MOSFET
KNX42150A
8.Test
circuits and waveforms
4 of 5
Rev 1.0 Aug. 2018
KIA
SEMICONDUCTORS
2.8A，1500V
N-CHANNEL MOSFET
KNX42150A
5 of 5
Rev 1.0 Aug. 2018
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