JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO – 92
KSC1730
TRANSISTOR (NPN)
1.EMITTER
FEATURES
High Transition Frequency
Low V
CE(sat)
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
30
15
5
50
200
625
150
-55~+150
Units
V
V
V
mA
mW
℃/W
℃
℃
2.COLLECTOR
3.BASE
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter
breakdown
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE
V
CE(sat)
C
ob
f
T
Test
conditions
Min
30
15
5
0.1
40
240
0.5
1.5
800
V
pF
MHz
Typ
Max
Unit
V
V
V
μA
I
C
= 0.01mA,I
E
=0
I
C
=5mA,I
B
=0
I
E
=0.01mA,I
C
=0
V
CB
=12V,I
E
=0
V
CE
=10V, I
C
=5mA
I
C
=10mA,I
B
=1mA
V
CB
=10V,I
E
=0, f=1MHz
V
CE
=10V,I
C
= 5mA
Emitter-base breakdown voltage
Collector cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Transition frequency
CLASSIFICATION OF h
FE
RANK
RANGE
R
40-80
O
70-140
Y
120-240
A,Dec,2010
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