JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
KSD1692
TRANSISTOR (NPN)
TO – 126
1. EMITTER
2. COLLECTOR
3. BASE
FEATURES
High DC Current Gain
Low Collector Saturation Voltage
High Power Dissipation
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
150
100
8
3
1.25
100
150
-55~+150
Unit
V
V
V
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
V
(BR)CBO
V
CEO(SUS)
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
*
*
*
*
Test
conditions
Min
150
100
8
Typ
Max
Unit
V
V
V
I
C
=1mA,I
E
=0
I
C
=30mA,I
B
=0
I
E
=5mA,I
C
=0
V
CB
=100V,I
E
=0
V
EB
=5V,I
C
=0
V
CE
=2V, I
C
=1.5A
V
CE
=2V, I
C
=3A
I
C
=1.5A,I
B
=1.5mA
I
C
=1.5A,I
B
=1.5mA
10
2
2K
1K
1.2
2
20K
μA
mA
V
CE(sat)
V
BE(sat)
V
V
*
*Pulse test: pulse width
≤300μs,
duty cycle≤ 1.5%.
CLASSIFICATION OF h
FE(1)
RANK
RANGE
O
2K-5K
Y
4K-12K
G
6K-20K
A,Dec,2010
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