JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
SOT-89-3L
KTA1273
TRANSISTOR (PNP)
1. BASE
FEATURES
High Current
Low Voltage
Complementary to KTC3205
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-30
-30
-5
-2
500
250
150
-55~+150
2. COLLECTOR
3. EMITTER
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE
f
T
C
ob
Test conditions
I
C
=-1mA,I
E
=0
I
C
=-10mA,I
B
=0
I
E
=-1mA,I
C
=0
V
CB
=-30V,I
E
=0
V
EB
=-5V,I
C
=0
V
CE
=-2V, I
C
=-0.5A
I
C
=-1.5A,I
B
=-30mA
V
CE
=-2V, I
C
=-500mA
V
CE
=-2V,I
C
=-500mA
V
CB
=-10V, I
E
=0, f=1MHz
120
48
100
Min
-30
-30
-5
-100
-100
320
-2
-1
V
V
MHz
pF
Typ
Max
Unit
V
V
V
nA
nA
CLASSIFICATION OF
h
FE
RANK
RANGE
MARKING
O
100–200
1273
Y
160–320
A,Nov,2010
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