Plastic-Encapsulate Transistors
FEATURES
Low frequency power amplifier application
Power switching application
KTA1298
(PNP)
MAXIMUM RATINGS (TA=25
unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
-35
-30
-5
-800
200
150
-55 to +150
Unit
V
V
V
mA
mW
1. BASE
2. EMITTER
3. COLLECTO
P
C
T
J
Tstg
SOT-23
ELECTRICAL CHARACTERISTICS (Tamb=25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector
Emitter
cut-off
cut-off
current
current
unless otherwise specified)
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
h
FE(1)
Test
conditions
Min
-35
-30
-5
-0.1
-0.1
100
40
-0.4
-0.5
120
13
-0.8
V
V
MHz
pF
320
Typ
Max
Unit
V
V
V
μA
μA
I
C
=- 1mA,I
E
=0
I
C
= -10mA, I
B
=0
I
E
=-1mA, I
C
=0
V
CB
=-30 V,I
E
=0
V
EB
= -5V,I
C
=0
V
CE
=-1V, I
C
=-100mA
V
CE
=-1V, I
C
=-800mA
I
C
=-500mA, I
B
= -20mA
V
CE
=-1V, I
C
=-10mA
V
CE
=-5V, I
C
=-10mA,
V
CB
=-10V, I
E
=0,f=1MHz
DC
current
gain
h
FE(2)
Collector-emitter saturation voltage
Base- emitter voltage
Transition
frequency
V
CE
(sat)
V
BE
f
T
C
ob
Collector output capacitance
CLASSIFICATION OF
Marking
Range
h
FE
IO
100-200
IY
160-320
GUANGDONG HOTTECH
INDUSTRIAL CO., LTD
Page:P2-P1
Plastic-Encapsulate Transistors
KTA1298
Typical Characteristics
GUANGDONG HOTTECH
INDUSTRIAL CO., LTD
Page:P2-P2
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