JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
SOT—23
KTC4075
FEATURES
TRANSISTOR（NPN
）
1. BASE
2. EMITTER
3. COLLECTOR
Power dissipation
P
CM
:
0.1
W（Tamb=25℃）
Collector current
I
CM:
0.15
A
Collector-base voltage
V
(BR)CBO
: 60
V
Operating and storage junction temperature range
T
J
，T
stg
: -55℃ to +150℃
１．０
２．４
１．３
０．９５
２．９
１．９
０．９５
ELECTRICAL CHARACTERISTICS（Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CEsat
unless
Test
otherwise
conditions
I
E
=0
specified）
MIN
60
50
5
0.1
0.1
70
700
0.25
80
V
MHz
MAX
UNIT
V
V
V
I
C
= 100
μ
A，
I
C
= 1mA， I
B
=0
I
E
= 100
μ
A， I
C
=0
V
CB
=60 V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
= 6V， I
C
=2mA
I
C
=100mA, I
B
= 10mA
V
CE
=10V,
I = 1mA
C
０．４
Unit : mm
μ
A
μ
A
f
T
C
ob
NF
V
CE
=10V， I
E
=0，f=1MHz
V
CE
=6 V，I
E
=0.1mA, f=1KHz，R
G
=10K?
3.5
10
dB
dB
Noise figure
CLASSIFICATION OF h
FE
Rank
Range
Marking
O
70~140
LO
Y
120~240
LY
GR
200~400
LGR
BL
350~700
LBL
SOT-23 PACKAGE OUTLINE DIMENSIONS
D
b
θ
0.2
E1
E
L1
e
e1
C
A1
A2
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
0.300
0°
1.800
0.550REF
0.500
8°
0.012
0°
Dimensions In Millimeters
Min
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
0.950TPY
2.000
0.071
0.022REF
0.020
8°
Max
1.100
0.100
1.000
0.500
0.150
3.000
1.400
2.550
Min
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
0.037TPY
0.079
A
L
Dimensions In Inches
Max
0.043
0.004
0.039
0.020
0.006
0.118
0.055
0.100
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