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LLSD103BT/R13

Rectifier Diode, Schottky, 1 Element, 0.35A, 30V V(RRM), Silicon, ROHS COMPLIANT, GLASS, LL-34, MINIMELF-2

器件类别:分立半导体    二极管   

厂商名称:强茂(PANJIT)

厂商官网:http://www.panjit.com.tw/

器件标准:  

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
强茂(PANJIT)
零件包装代码
MELF
包装说明
O-LELF-R2
针数
2
Reach Compliance Code
compliant
ECCN代码
EAR99
外壳连接
ISOLATED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JESD-30 代码
O-LELF-R2
元件数量
1
端子数量
2
最大输出电流
0.35 A
封装主体材料
GLASS
封装形状
ROUND
封装形式
LONG FORM
峰值回流温度(摄氏度)
NOT SPECIFIED
最大功率耗散
0.4 W
认证状态
Not Qualified
最大重复峰值反向电压
30 V
最大反向恢复时间
0.01 µs
表面贴装
YES
技术
SCHOTTKY
端子形式
WRAP AROUND
端子位置
END
处于峰值回流温度下的最长时间
NOT SPECIFIED
文档预览
LLSD103A~LLSD103C
SMALL SIGNAL SCHOTTKY BARRIES SWITCHING DIODES
VOLTAGE
20 to 40 Volts
CURRENT
0.35 Amperes
MINI-MELF/LL-34
Unit : inch (mm)
FEATURES
• Low Forward Voltage Drop
• Guard Ring Construction for Transient Protection
• Low Reverse Recovery Time
• Low Reverse Capacitance
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
Case: Molded Glass MINI MELF
Terminals: Solderable per MIL-STD-750, Method 2026
Polarity: See Diagram Below
Approx. Weight: 0.03 grams
.020(0.5)
.012(0.3)
.146(3.7)
.130(3.3)
.020(0.5)
.012(0.3)
• Mounting Position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
J
=25°C unless otherwise noted)
PA RA M E TE R
P e a k R e p e t i t i ve R e ve r s e V o l t a g e
R M S R e ve r s e V o l t a g e
M a x. A ve r a g e R e c t i f i e d C ur r e nt
P e a k F o r w a r d S ur g e C ur r e nt , t < 0 . 3 m s
P o w e r D i s s i p a t i o n D e r a t e A b o ve 2 5
O
C
M a x i m u m F o r w a r d V o l t a g e , I
F
= 2 0 m A
I
F
= 2 0 0 m A
M a xi m um R e ve r s e C ur r e nt
Ty p i c a l J u n c t i o n C a p a c i t a n c e ( N o t e 1 )
Ty p i c a l R e v e r s e R e c o v e r y ( N o t e 2 )
Ty p i c a l T h e r m a l R e s i s t a n c e
S t o r a g e Te m p e r a t u r e R a n g e
S YM B O L
V
RRM
V
RMS
I
F ( A V )
I
F S M
P
D
V
F
I
R
C
J
t
rr
R
θ
J A
T
S T G
LLSD103A
40
28
LLSD103B
30
21
350
15
400
0 .3 7
0 .7 0
LLSD103C
20
14
.055(1.4)DIA.
.063(1.6)
U N IT S
V
V
mA
A
mW
V
5@30V
5@20V
50
10
250
-6 5 to +1 7 5
5@10V
µ
A
pF
ns
O
C / W
O
C
NOTE:
1. CJ at V
R
=0, f=1MHZ
2. From I
F
=50mA to I
R
=200mA, R
L
=100Ω
STAD-FEB.09.2009
PAGE . 1
LLSD103A~LLSD103C
RATING AND CHARACTERISTIC CURVES
500
1000
FORWARD CURRENT (mA)
400
POWER DISSIPATION,mW
100
300
10
200
1.0
100
0.1
0.01
0
0.5
1.0
0
0
100
200
O
FORWARD VOLTAGE (V)
AMBIENT TEMPERATURE ( C)
Fig.1 FORWARD CHARACTERISTICS
Fig.2 POWER DISSIPATION DERATING CURVE
100
C
J
, CAPACITANCE (pF)
10
1.0
0.1
0
10
20
30
40
50
V
R
, REVERSE VOLTAGE (V)
Fig.3 TYPICAL CAPACITANCE vs REVERSE VOLATGE
STAD-FEB.09.2009
PAGE . 2
LLSD103A~LLSD103C
MOUNTING PAD LAYOUT
ORDER INFORMATION
• Packing information
T/R - 10K per 13" plastic Reel
T/R - 2.5K per 7" plastic Reel
LEGAL STATEMENT
Copyright PanJit International, Inc 2009
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
STAD-FEB.09.2009
PAGE . 3
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