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LMV358BP

1MHz, 80μA, RRIO, Op Amps

Features



Supply Voltage: 2.5V to 5.5V

Low Supply Current: 80μA per channel

Positive Offset Voltage: +1mV to +4mV when Vcm is close

to Ground



Offset Voltage Temperature Drift: 2 μV/°C

High Output Capability: 100mA

Description

The LMV358BP is CMOS RRIO op-amps with low offset, low

power and stable high frequency response. The product has

1MHz bandwidth, 0.7V/μs slew rate and low distortion while

drawing only 80μA of quiescent current per amplifier. The input

common-mode voltage range extends 100mV beyond V– and

V+, and the outputs swing rail-to-rail.

The LMV358BP is optimized to achieve a positive Vos: +1mV to

Rail to Rail Input and Output

Bandwidth: 1 MHz

Slew Rate: 0.7V/μs

Excellent EMI Suppress Performance

Low Noise: 35 nV/√Hz at 1kHz

–40°

to 125° Operation Temperature Range

+4mV at Vcm extends 100mV beyond V-. The feature is very

suitable for low side current sense, the positive Vos when Vcm

is around to ground to keep the very small current signal showed

up to amplifier input; the Vos is less than 4mV, 90% of parts is

less than 3mV to keep the accuracy and dynamic range.

Applications



Wireless Charger

Smoke/Gas/Environment Sensors

Portable Instruments and Mobile Device

Distribution of Vos at Vcc=5V, Vcm=-0.1V

Pin Configuration

LMV358BP

8-Pin SOIC(-S Suffixes)

Out A

-In A

+In A

-V

Out B

-In B

+In B

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Rev.0

LMV358BP

1MHz, 80μA, RRIO, Op Amps

Table of Contents

Features ........................................................................................................................................................................... 1

Applications ..................................................................................................................................................................... 1

Description....................................................................................................................................................................... 1

Pin Configuration ............................................................................................................................................................ 1

Table of Contents ............................................................................................................................................................ 2

Revision History .............................................................................................................................................................. 3

Order Information ............................................................................................................................................................ 3

Absolute Maximum Ratings

Note 1

................................................................................................................................... 4

ESD Rating ....................................................................................................................................................................... 4

Thermal Information ....................................................................................................................................................... 4

Electrical Characteristics ............................................................................................................................................... 5

Typical Performance Characteristics ............................................................................................................................ 6

Tape and Reel Information ............................................................................................................................................. 9

Package Outline Dimensions ....................................................................................................................................... 10

SOIC-8 ....................................................................................................................................................................................... 10

MSOP-8 ......................................................................................................................................................................................11

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Rev.0

LMV358BP

1MHz, 80μA, RRIO, Op Amps

Revision History

Date

2018/4/30

2018/10/30

Revision

Rev.Pre

Rev.0

Notes

Pre-Release Version

Initial Version

Order Information

Order Number

Operating Temperature Range

Package

Marking Information

V358B

LMV358BP-SR

-40 to 125°

8-Pin SOIC

XXXX

Note 3

V358B

LMV358BP-VR

-40 to 125°

8-Pin MSOP

XXXX

Note 3

Tape and Reel, 3000

Tape and Reel, 4000

MSL

Transport Media, Quantity

Note 1: The sample will be ready in 1 month.

Note 2: XX is the date code.

Note 3: XXXX is date code.

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Rev.0

LMV358BP

1MHz, 80μA, RRIO, Op Amps

Absolute Maximum Ratings

Note 1

Parameters

Supply Voltage, (+V

)– (-V

)

Input Voltage

Differential Input Voltage

Input Current: +IN, –IN

Note 2

Output Short-Circuit Duration

Note 3

Maximum Junction Temperature

Operating Temperature Range

Storage Temperature Range

Lead Temperature (Soldering, 10 sec)

Rating

(-V

) – 0.3 to (+V

) + 0.3

±6V

±10mA

Infinite

150°

–40 to 125°

–65 to 150°

260°

Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to

any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime.

Note 2: The inputs are protected by ESD protection diodes to each power supply. If the input extends more than 300mV beyond the

power supply, the input current should be limited to less than 10mA.

Note 3: A heat sink may be required to keep the junction temperature below the absolute maximum. This depends on the power

supply voltage and how many amplifiers are shorted. Thermal resistance varies with the amount of PC board metal connected to the

package. The specified values are for short traces connected to the leads.

ESD Rating

Symbol

HBM

CDM

Parameter

Human Body Model ESD

Charged Device Model ESD

Condition

ANSI/ESDA/JEDEC JS-001

ANSI/ESDA/JEDEC JS-002

Minimum Level

Unit

Thermal Information

Package Type

8-Pin SOIC

158

Unit

C/W

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Rev.0

LMV358BP

1MHz, 80μA, RRIO, Op Amps

Electrical Characteristics

All test condition is V

= 5V, T

= 25° R

= 2kΩ, C

=100pF, unless otherwise noted.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Power Supply

PSRR

Supply Voltage Range

Quiescent Current per Amplifier

Power Supply Rejection Ratio

2.5

5.5

130

μA

Input Characteristics

CMR

Range

CMRR

Xtalk

Common Mode Rejection Ratio

Channel Separation

= 0V to 3V

f = 1kHz, RL = 2kΩ

110

Input Offset Voltage

Input Offset Voltage Drift

Input Bias Current

= 85 °

Input Offset Current

Differential Mode

Input Capacitance

Common Mode

Open-loop Voltage Gain

Common-mode Input Voltage

(V-) - 0.1

(V+) + 0.1

LOAD

= 10kΩ

110

= -0.1V to 3V

= -40° to 125°

= 25 °

μV/°

Output Characteristics

, V

Maximum Output Voltage Swing

Output Short-Circuit Current

LOAD

= 10kΩ

100

AC Specifications

GBW

Gain-Bandwidth Product

= 1, V

OUT

= 1.5V to 3.5V, C

LOAD

Slew Rate

Settling Time, 0.1%

Settling Time, 0.01%

Phase Margin

Gain Margin

= 60pF, R

LOAD

= 1kΩ

AV = 1, 2V Step, C

LOAD

= 60pF,

LOAD

= 1kΩ

LOAD

= 1kΩ, C

LOAD

= 60pF

LOAD

= 1kΩ, C

LOAD

= 60pF

0.7

3.5

4.8

MHz

V/μs

μs

Noise Performance

THD+N

Input Voltage Noise

Input Voltage Noise Density

Input Current Noise

Total Harmonic Distortion and

Noise

f = 0.1Hz to 10Hz

f = 1kHz

f = 1kHz, AV =1, RL = 2kΩ,

VOUT = 1Vp-p

0.003

μV

RMS

nV/√Hz

fA/√Hz

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Rev.0