LNH06R200/LNG06R200/LNC06R200
Lonten N-channel 60V, 35A, 20mΩ Power MOSFET
Description
These N-Channel enhancement mode power field
effect
transistors
are
using
trench
DMOS
technology. This advanced technology has been
especially tailored to minimize on-state resistance,
provide superior switching performance, and with
stand high energy pulse in the avalanche and
commutation mode. These devices are well suited
for high efficiency fast switching applications.
Product Summary
V
DSS
R
DS(on).max
@ V
GS
=10V
I
D
60V
20mΩ
35A
Pin Configuration
Features
60V,35A,R
DS(ON).max
=20mΩ@V
GS
=10V
Improved dv/dt capability
Fast switching
100% EAS Guaranteed
Green device available
TO-251
TO-252
TO-220
D
G
S
Applications
Motor Drives
UPS
DC-DC Converter
T
C
= 25°C unless otherwise noted
N-Channel MOSFET
Pb
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Continuous drain current ( T
C
= 25°C )
Continuous drain current ( T
C
= 100°C )
Pulsed drain current
1)
Gate-Source voltage
Avalanche energy
2)
Power Dissipation ( T
C
= 25°C )
Storage Temperature Range
Operating Junction Temperature Range
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
P
D
T
STG
T
J
Value
60
35
22
140
±20
39
50
-55 to +150
-55 to +150
Unit
V
A
A
A
V
mJ
W
°C
°C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Symbol
R
θJC
Value
2.5
Unit
°C/W
Version 1.1,Jan-2020
1
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Package Marking and Ordering Information
Device
LNH06R200
LNG06R200
LNC06R200
LNH06R200/LNG06R200/LNC06R200
Device Package
TO-251
TO-252
TO-220
Marking
LNH06R200
LNG06R200
LNC06R200
Electrical Characteristics
Parameter
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain-source leakage current
Gate leakage current, Forward
Gate leakage current, Reverse
Drain-source on-state resistance
Forward transconductance
T
J
= 25°C unless otherwise noted
Symbol
BV
DSS
V
GS(th)
I
DSS
I
GSSF
I
GSSR
R
DS(on)
g
fs
Test Condition
V
GS
=0 V, I
D
=250uA
V
DS
=V
GS
, I
D
=250uA
V
DS
=60 V, V
GS
=0 V, T
J
= 25°C
V
DS
=48 V, V
GS
=0 V, T
J
= 125°C
V
GS
=20 V, V
DS
=0 V
V
GS
=-20 V, V
DS
=0 V
V
GS
=10 V, I
D
=20 A
V
GS
=4.5 V, I
D
=10 A
V
DS
=5 V , I
D
=20A
Min.
60
1.0
---
---
---
---
---
---
---
Typ.
---
1.6
---
---
---
---
16
19
43
Max.
---
2.5
1
10
100
-100
20
25
---
Unit
V
V
μA
μA
nA
nA
mΩ
mΩ
S
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate resistance
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
R
g
V
GS
=0V, V
DS
=0V, F=1MHz
V
DD
= 30V,V
GS
=10V, I
D
=20 A
V
DS
= 25 V, V
GS
= 0 V,
F = 1MHz
---
---
---
---
---
---
---
---
1465
151
103
11.5
105
127
30
2.62
---
---
---
---
---
---
---
---
Ω
ns
pF
Gate charge characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Q
gs
Q
gd
Q
g
V
DS
=25 V, I
D
=20A,
V
GS
= 10 V
---
---
---
6.2
6.1
29.5
---
---
---
nC
Drain-Source diode characteristics and Maximum Ratings
Continuous Source Current
Pulsed Source Current
3)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
Q
rr
V
GS
=0V, I
S
=20A, T
J
=25℃
I
S
=20A,di/dt=100A/us, T
J
=25℃
---
---
---
---
---
---
---
---
24.8
31.1
35
140
1.2
---
---
A
A
V
ns
nC
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature.
2: V
DD
=25V, V
GS
=10V, L=0.5mH, I
AS
=12.5A, R
G
=25Ω, Starting T
J
=25℃.
3: Pulse Test：Pulse Width
≤300μs,
Duty Cycle≤2％.
Version 1.1,Jan-2020
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Electrical Characteristics Diagrams
Figure 1. Typ. Output Characteristics
V
GS
=4V,4.5V,6.5V,8V,10V
From Bottom to Top
LNH06R200/LNG06R200/LNC06R200
Figure 2. Transfer Characteristics
V
GS
=3.5V
Common Source
V
DS
=5 V
Pulse test
Common Source
T
c
= 25°C
Pulse test
T
c
=1 25°C
V
GS
=3V
T
c
= 25°C
V
GS
=2.5V
Drain−source voltage V
DS
(V)
Gate−source voltage V
GS
(V)
Figure 3. Capacitance
Notes:
f = 1 MHz
V
GS
=0 V
Characteristics
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Figure 4. Gate Charge Waveform
V
gs
= 10 V
V
ds
= 25 V
I
D
= 20 A
Drain-Source Voltage V
DS
(V)
Total Gate Charge Q
G
(nC)
Figure 5. Body-Diode Characteristics
Figure 6. Rdson-Drain Current
V
GS
= 4.5V
T
c
=1 25°C
T
c
= 25°C
V
GS
= 10V
Source-Drain Voltage V
SD
(V)
Drain Current I
D
(A)
Version 1.1,Jan-2020
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LNH06R200/LNG06R200/LNC06R200
Figure 7. Rdson-Junction Temperature(℃)
Figure 8. Maximum Safe Operating Area
10us
1ms
100us
Limited by R
DS(on)
DC
Notes:
T = 25°C
T = 150°C
Single Pulse
j
c
Drain-Source Voltage V
DS
(V)
Figure 9. Normalized Maximum Transient Thermal Impedance
Version 1.1,Jan-2020
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Test Circuit & Waveform
LNH06R200/LNG06R200/LNC06R200
Figure 8. Gate Charge Test Circuit & Waveform
Figure 9. Resistive Switching Test Circuit & Waveforms
Figure 10. Unclamped Inductive Switching (UIS) Test Circuit & Waveform
Figure 11. Diode Recovery Circuit & Waveform
Version 1.1,Jan-2020
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