LITE-ON
SEMICONDUCTOR
LS4448W
REVERSE VOLTAGE
- 100
V
POWER DISSIPATION
- 400
mW
SURFACE MOUNT
FAST SWITCHING DIODE
FEATURES
For surface mounted application
Silicon epitaxial planar diode
High speed switching
Ultra small surface mount package
Low leakage current
B
1206
A
1206
Dim.
Min.
3.00
1.30
0.75
0.35
Max.
3.40
1.70
0.95
0.75
A
B
C
MECHANICAL DATA
Case : 1206
Case Material: "Green" molding compound, UL
flammability classification 94V-0, (No Br. Sb. Cl)
Terminals: Lead Free Plating
Polarity : Color band denotes cathode
Weight : Approx.10mg
C
D
D
All Dimensions in millimeter
Maximum Ratings and Thermal Characteristics
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Repetitive Peak Forward Current
Average Rectified Output Currnet
Forward Surge Current at
Total Power Dissipation
Thermal Resistance Junction to Ambiant Air
Operating and Storage Temperature Range
Tp = 1.0 s
Tp = 1.0 us
@ T
A
= 25
℃
unless otherwise specified
Symbol
V
RRM
V
RWM
V
DC
Value
100
70
500
250
800
2.0
400
375
Units
V
V
mA
mA
mA
A
mW
℃
/W
℃
V
RMS
@ Duty Cycle < 50%
I
FRM
I
AV
I
FSM
P
d
R
θ
JA
T
J
, T
STG
-65 to +175
Electrical Characteristics
@ T
A
= 25
℃
unless otherwise specified
Parameters
Reverse Breakdown Voltage
Symbol
V
BR
Test Condition
IR = 1uA
IF = 5.0mA
IF = 10mA
IF = 100mA
IF = 150mA
VR = 20V
VR = 75V
VR = 20V , T
J
=150℃
VR = 0V ; F = 1MHz
IF = IR=10mA ; RL = 100
measured at IR=1mA
Min.
100
Max.
Unit
V
Forward Voltage
V
F
0.62
---
---
---
0.72
0.855
1.0
1.25
25
5.0
50
4
4
V
Reverse Leakage Current
I
R
nA
uA
uA
pF
ns
Junction Capacitance
Reverse Recovery Time
C
J
T
rr
REV. 1, Oct-2008, KSJS05
RATING AND CHARACTERISTIC CURVES
LS4448W
Fig.1 - FORWARD CURRENT DERATING CURVE
INSTANTANEOUS REVERSE CURRENT ( nA )
300
AVERAGE FORWARD CURRENT (mA)
10000
Fig.4 - TYPICAL REVERSE CHARACTERISTICS
250
1000
200
150
100
100
RESISTIVE OR
INDUCTIVE LOAD
VR = 20V
10
50
0
0
25
50
75
100
125
150
175
200
CASE TEMPERATURE , (
℃
)
1
0
25
50
75
100
125
150
175
200
JUNCTION TEMPERATURE , (
℃
)
Fig.2 - POWER DISSIPATION DERATING CURVE
500
2.0
Fig.5-TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE (pF)
POWER DISSIPATION (mW)
400
1.8
300
1.6
200
1.4
f =1MHz
T
J
=25
℃
100
1.2
0
0
25
50
75
100
125
150
175
200
AMBIENT TEMPERATURE , (
℃
)
1.0
0.1
1
10
100
REVERSE VOLTAGE (V)
Fig.3-TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT (mA)
1000
Recommended Mounting Pad Layout
100
T
J
= 100
℃
0.635
Typ.
10
T
J
= 25
℃
1.70
Typ.
1
Pulse Width: 300us
2.16
Typ.
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
INSTANTANEOUS FORWARD VOLTAGE , ( V )
All dimensions in millimeter
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