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LT10A05

10 A, 600 V, SILICON, RECTIFIER DIODE

器件类别:分立半导体    二极管   

厂商名称:台湾光宝(LITEON)

厂商官网:http://optoelectronics.liteon.com/en-global/Home/index

器件标准:

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
台湾光宝(LITEON)
包装说明
PLASTIC, R-6, 2 PIN
针数
2
Reach Compliance Code
compli
ECCN代码
EAR99
其他特性
LOW LEAKAGE CURRENT
应用
GENERAL PURPOSE
外壳连接
ISOLATED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
1 V
JESD-30 代码
O-PALF-W2
最大非重复峰值正向电流
600 A
元件数量
1
相数
1
端子数量
2
最高工作温度
125 °C
最低工作温度
-55 °C
最大输出电流
10 A
封装主体材料
PLASTIC/EPOXY
封装形状
ROUND
封装形式
LONG FORM
峰值回流温度(摄氏度)
255
认证状态
Not Qualified
最大重复峰值反向电压
600 V
表面贴装
NO
端子形式
WIRE
端子位置
AXIAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
文档预览
LITE
ON
POWER
SEMICONDUCTOR
LT10A01 thru LT10A07
REVERSE VOLTAGE
- 50
to
1000
Volts
FORWARD CURRENT
- 10
Amperes
PLASTIC SILICON RECTIFIERS
FEATURES
Low cost
Diffused junction
Low forward voltage drop
Low reverse leakage current
High current capability
The plastic material carries UL recognition 94V-0
A
R-6
B
A
C
D
MECHANICAL DATA
Case : JEDEC R-6 molded plastic
Polarity : Color band denotes cathode
Weight : 0.07 ounces, 2.1 grams
Mounting position : Any
Dim.
A
B
C
Min.
25.4
8.60
1.20
R-6
Max.
-
9.10
1.30
8.60
9.10
D
All Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
SYMBOL
LT10A01 LT10A02 LT10A03 LT10A04 LT10A05 LT10A06 LT10A07
UNIT
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100
70
100
200
140
200
400
280
400
10.0
600
1.0
10
100
150
10
-55 to +125
-55 to +150
600
420
600
800
560
800
1000
700
1000
V
V
V
A
@T
A
=
50 C
Peak Forward Surge Current
8.3ms single half sine-wave
super imposed on rated load (JEDEC Method)
Maximum forward Voltage at 10A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Junction
Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Storage Temperature Range
I
FSM
V
F
I
R
C
J
R
0JA
A
V
uA
pF
C/W
@T
J
=25 C
@T
J
=100 C
T
J
T
STG
C
C
REV. 1, 24-May-2000
NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Thermal Resistance Junction to Ambient.
RATING AND CHARACTERISTIC CURVES
LT10A01 thru LT10A07
LITE
ON
AVERAGE FORWARD CURRENT
AMPERES
12.0
10.0
8.0
6.0
4.0
2.0
0
SINGLE PHASE HALF WAVE 60Hz
RESISTIVE OR INDUCTIVE LOAD
PEAK FORWARD SURGE CURRENT,
AMPERES
FIG.1 - FORWARD CURRENT DERATING CURVE
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
800
600
400
200
Pulse width 8.3ms
Single Half-Sine-Wave
(JEDEC METHOD)
25
0
1
2
5
10
20
50
100
50
75
100
125
150
175
AMBIENT TEMPERATURE , C
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL JUNCTION CAPACITANCE
1000
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
100
INSTANTANEOUS FORWARD CURRENT ,(A)
CAPACITANCE , (pF)
100
10
T
J
= 25 C
10
1.0
T
J
= 25 C, f= 1MHz
1
1
4
10
100
PULSE WIDTH 300us
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
REVERSE VOLTAGE , VOLTS
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
REV. 1, 24-May-2000
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